Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing

Publication Information

Title

Japanese:
English:	Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing

Author

Japanese:	Mutsumi Kimura, 長谷川貴之, 井手啓介, 野村研二, 神谷利夫, 細野秀雄.
English:	Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono.

Language

English

Journal/Book name

Japanese:
English:	Solid-State Electronics

Volume, Number, Page

Vol. 75 pp. 74-76

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI