Low-temperature epitaxial growth of high quality Si1-xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition

Publication Information

Title

Japanese:
English:	Low-temperature epitaxial growth of high quality Si1-xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition

Author

Japanese:	陶科, 黒澤慶能, 半那純一.
English:	Ke Tao, Yoshinori Kurosawa, Jun-ichi Hanna.

Language

English

Journal/Book name

Japanese:
English:	Appl. Phys. Lett.

Volume, Number, Page

Vol. 102 No. 18 pp. 182109 - 182109-5

Published date

May 13, 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: