Low-temperature epitaxial growth of Ge-rich SiGe film on Si by Reactive Thermal Chemical Vapor Deposition | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Low-temperature epitaxial growth of Ge-rich SiGe film on Si by Reactive Thermal Chemical Vapor Deposition

Author

Japanese:	陶科, 半那純一.
English:	Ke Tao, Jun-ichi Hanna.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

T9.18

Published date

Dec. 4, 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2013MRS Fall Meeting

Conference site

Japanese:
English:	Boston

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