TCAD simulation of trench-gate IGBTs for  prediction of carrier lifetime requirements for future scaled devices

Publication Information

Title

Japanese:
English:	TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices

Author

Japanese:	渡辺正裕.
English:	Masahiro Watanabe.

Language

English

Journal/Book name

Japanese:
English:	Proceedings of the 2021 IEEE 14th International Conference on ASIC (ASICON 2021)

Volume, Number, Page

Published date

Oct. 26, 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2021 IEEE 14th International Conference on ASIC (ASICON 2021)

Conference site

Japanese:
English:	Kunming