"Tsunaki Takahashi,Nobuyasu Beppu,陳君ろ,SHUNRI ODA,Ken Uchida","バルク／SOI FinFET の自己加熱およびアナログ特性の最適化","第61回応用物理学会春季学術講演会",,,,,,2014,Mar.
"Aya Shindome,Yu Doioka,Nobuyasu Beppu,Shunri Oda,Ken Uchida","Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons",,"Japanese Journal of Applied Physics",,"Vol. 52",,"pp. 04CN05 (5 pages)",2013,Mar.
"Tsunaki Takahashi,Nobuyasu Beppu,Kunro Chen,Shunri Oda,Ken Uchida","Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors",,"Japanese Journal of Applied Physics",,"Vol. 52",,"pp. 04CC03 (6 pages)",2013,Feb.
"Tsunaki Takahashi,Nobuyasu Beppu,SHUNRI ODA,Ken Uchida","熱配慮設計によるFinFETアナログ特性の最適化","第60回応用物理学会春季学術講演会",,,,,,2013,
"Aya Shindome,Nobuyasu Beppu,Tsunaki Takahashi,SHUNRI ODA,Ken Uchida","架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性","第60回応用物理学会春季学術講演会",,,,,,2013,
"Tsunaki Takahashi,Nobuyasu Beppu,陳 君?,SHUNRI ODA,Ken Uchida","デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計","第59回応用物理学関係連合講演会",,,,,"  17a-A1-9",2012,Mar.
"Nobuyasu Beppu,SHUNRI ODA,Ken Uchida","AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価","第59回応用物理学関係連合講演会",,,,,"  17a-A1-8",2012,Mar.
"N. Beppu,T. Takahashi,S Oda,K. Uchida","Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV","IEDM 2012",,,,,"pp. 641-644",2012,
"Tsunaki Takahashi,Nobuyasu Beppu,SHUNRI ODA,Ken Uchida","デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出","第73回応用物理学会学術講演会",,,,,,2012,
"Nobuyasu Beppu,SHUNRI ODA,Ken Uchida","ACコンダクタンス法を用いた実験手法に対する検証","第73回応用物理学会学術講演会",,,,,,2012,
"T. Takahashi,K.Chen,N.Beppu,S. Oda,K.  Uchida","Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability","IEDM2011",,,,,"  34.6",2011,Dec.
"T. Ohashi,T. Takahashi,N. Beppu,S. Oda,K. Uchida","Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs","IEDM2011",,,,"No. 16.4",,2011,Dec.
"T. Takahashi,N. Beppu,K. Chen,S. Oda,K. Uchida","Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability","IEDM 2011",,,,,"pp. 809-812",2011,
"T. Ohashi,T. Takahashi,N. Beppu,S. Oda,K. Uchida","Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs","IEDM 2011",,,,,"pp. 390-393",2011,