"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"Masashi Kashiwano,Jun Hirai,Shunsuke Ikeda,Motohiko Fujimatsu,YASUYUKI MIYAMOTO","半導体ト?レイン層及ひ?狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"Atsushi Kato,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,Yasuyuki Miyamoto","Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 904-919",2012,May
"Masashi Kashiwano,Jun Hirai,Shunsuke Ikeda,Motohiko Fujimatsu,YASUYUKI MIYAMOTO","半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化","電子情報通信学会技術研究報告",,,,,,2012,May
"Masashi Kashiwano,Jun Hirai,Shunsuke Ikeda,Motohiko Fujimatsu,YASUYUKI MIYAMOTO","GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.
"Yosiharu Yonai,Toru Kanazawa,Shunsuke Ikeda,YASUYUKI MIYAMOTO","InPエッチング異方性による微細InGaAsチャネルMOSFET","応用物理学会 2012年度春季大会",,,,,,2012,Mar.
"Jun Hirai,Tomoki Kususaki,Shunsuke Ikeda,YASUYUKI MIYAMOTO","Vertical InGaAs MOSFET with HfO2 gate","2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2012)",,,,,,2012,
"T. Kanazawa,R. Terao,S. Ikeda,Y. Miyamoto","MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm","23rd Int. Conf. Indium Phosphide and Related Materials (IPRM2011)",,,,,,2011,Sept.
"A. Kato,T. Kanazawa,S. Ikeda,Y. Yonai,YASUYUKI MIYAMOTO","Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"Shunsuke Ikeda,Toru Kanazawa,YASUYUKI MIYAMOTO","電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"R. Terao,T. Kanazawa,S. Ikeda,Y. Yonai,A. Kato,Y. Miyamoto","InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm",,"Applied Phys. Exp.","The Japan Society of Applied Physics","vol. 4","no. 5","  054201",2011,Apr.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,atsushi kato,YASUYUKI MIYAMOTO","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"Yosiharu Yonai,Toru Kanazawa,Shunsuke Ikeda,YASUYUKI MIYAMOTO","High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching","2011 IEEE International Electron Devices Meeting (IEDM 2011)",,,,,,2011,
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer","2010 International Conference on Solid State Devices and Materials",,,,,"pp. 129-130",2010,Sept.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,atsushi kato,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Ryousuke Terao,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,atsushi kato,YASUYUKI MIYAMOTO","Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9","  094201",2010,Sept.
"T. Kanazawa,K. Wakabayashi,H. Saito,R. Terao,T. Tajima,S. Ikeda,Y. Miyamoto,K. Furuya","Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"Ryousuke Terao,Toru Kanazawa,Hisashi Saito,kazuya wakabayashi,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"kazuya wakabayashi,Toru Kanazawa,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Tomonori Tajima,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","III-V族サブミクロンチャネルを有する高移動度MOSFET","電気学会電子デバイス研究会",,,,,,2010,Mar.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Tomonori Tajima,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric","IEICE Technical Report, Electron Devices","IEICE Technical Report, Electron Devices",,"Vol. 109","No. 360","pp. 39-42",2010,Jan.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.