"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"Yuichi Mishima,Toru Kanazawa,Haruki Kinoshita,Eiji Uehara,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET","第61回春季応用 物理学会学術講演会",,,,,,2014,Mar.
"Toru Kanazawa,Yuichi Mishima,Haruki Kinoshita,Eiji Uehara,YASUYUKI MIYAMOTO","MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET","電子情報通信学 会 電子デバイス研究会","IEICE technical report",,,,,2014,Jan.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,,"  2-9","pp. 19-20",2013,Sept.
"Kazuto Ohsawa,atsushi kato,Takeru Sagai,Toru Kanazawa,Eiji Uehara,YASUYUKI MIYAMOTO","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"Takeru Sagai,Eiji Uehara,Kazuto Ohsawa,YASUYUKI MIYAMOTO","n-InP ソースを持つT ケ?ート構造 InGaAs-MOSFET の高周波特性","2013年電子情報通信学会総合大会",,,,,,2013,Mar.