"W Zhang,T. Kanazawa,Y. Miyamoto","Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment",,"Apl. Phys. Exp",,"vol. 12","no. 6","  065005 (2019)",2019,May
"Wenlun Zhang,Toru Kanazawa,Minoru Kitamura,YASUYUKI MIYAMOTO","UV-O3表面酸化によるHfS2 MOSFETの性能改善","第66回応用物理学会春季学術講演会",,,,,"  11p-W521-4",2019,Mar.
"W Zhang,S. Netsu,T. Kanazawa,T. Amemiya,Y. Miyamoto","Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor",,"Jpn. J. Appl. Phys",,"  58, SBBH02 (2019)",,,2019,Jan.
"Wenlun Zhang,Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET","第79回応用物理学会秋季学術講演会",,,,,"  19a-212B-5",2018,Sept.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  M-7-03",2018,Sept.