"Y. Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,K. Ohsawa","Regrown Source/Drain in InGaAs Multi-Gate MOSFETs",,"J. Crystal Growth",,"vol. 522",," （2019）11-15",2019,Sept.
"M.Kitamura,T.Kanazawa,Y.Miyamoto","Evaluation of fabricationmethod of InGaAs nanosheet","13rd th Topical Workshop onHeterostructure Microelectronics, (TWHM 2019)",,,,," 6-6",2019,Aug.
"W Zhang,T. Kanazawa,Y. Miyamoto","Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment",,"Apl. Phys. Exp",,"vol. 12","no. 6"," 065005 (2019)",2019,May
"Minoru Kitamura,Toru Kanazawa,YASUYUKI MIYAMOTO","HSQを用いたInGaAsナノシート構造作製法評価","第66回応用物理学会春季学術講演会",,,,," 11a-M121-11",2019,Mar.
"Wenlun Zhang,Toru Kanazawa,Minoru Kitamura,YASUYUKI MIYAMOTO","UV-O3表面酸化によるHfS2 MOSFETの性能改善","第66回応用物理学会春季学術講演会",,,,," 11p-W521-4",2019,Mar.
"W Zhang,S. Netsu,T. Kanazawa,T. Amemiya,Y. Miyamoto","Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor",,"Jpn. J. Appl. Phys",," 58, SBBH02 (2019)",,,2019,Jan.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,," M-7-03",2018,Sept.
"Wenlun Zhang,Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET","第79回応用物理学会秋季学術講演会",,,,," 19a-212B-5",2018,Sept.
"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,," P2-32",2018,June
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,," We3C3.2",2018,May
"Tomohiro Amemiya,Satoshi Yamasaki,Toru Kanazawa,Zhichen Gu,Daisuke Inoue,Atsushi Ishikawa,Nobuhiko Nishiyama,Takuo Tanaka,Tatsuhiro Urakami,Shigehisa Arai","Infrared Invisibility Cloak Using Rolled Metamaterial Film","The Conference on Lasers and Electro-Optics 2018 (CLEO 2018)",,,,,,2018,May
"Seiko Netsu,Toru Kanazawa,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type-II HfS2/MoS2 Heterojunction Transistors",,"IEICE Transactions on Electronics",,"Vol. E101-C","No. 5","pp. 338-342",2018,May
"Tomohiro Amemiya,Satoshi Yamasaki,Keisuke Masuda,Hibiki Kagami,Zhichen Gu,Daisuke Inoue,Toru Kanazawa,Nobuhiko Nishiyama,Tatsuhiro Urakami,SHIGEHISA ARAI","メタマテリアルフィルムを用いた光学遮蔽","2018年電子情報通信学会総合大会",,,,,,2018,Mar.
"Tomohiro Amemiya,Satoshi Yamasaki,Keisuke Masuda,Hibiki Kagami,Zhichen Gu,Daisuke Inoue,Toru Kanazawa,Nobuhiko Nishiyama,Tatsuhiro Urakami,SHIGEHISA ARAI","メタマテリアルフィルムを用いたMWIR迷彩","第65回応用物理学会春季学術講演会",,," 20p-C301-9",,,2018,Mar.
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,," 18a-G203-3",,,2018,Mar.
"Toru Kanazawa,Yasuyuki Miyamoto","Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide","IWPSD 2017",,,,," 2D06",2017,Dec.
"Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","HfS2/MoS2 ヘテロジャンクションの温度依存電流特性","第78回応用物理学会秋季学術講演会",,,,"No. 7p-C11-16",,2017,Sept.
"Kazuto Ohsawa,Toru Kanazawa,Nobukazu Kise,Tomohiro Amemiya,YASUYUKI MIYAMOTO","InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発","第78回応用物理学会秋季学術講演会",,,,"No. 8a-S22-2",,2017,Sept.
"Tomohiro Amemiya,Satoshi Yamasaki,Toru Kanazawa,Zhichen Gu,Daisuke Inoue,Atsushi Ishikawa,Nobuhiko Nishiyama,Takuo Tanaka,Tatsuhiro Urakami,SHIGEHISA ARAI","メタマテリアルフィルムによる近赤外光学迷彩","第78回応用物理学会秋季学術講演会",,,,"No. 8a-S21-3",,2017,Sept.
"Seiko Netsu,Toru Kanazawa,Vikrant Upadhyaya,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type II HfS2/MoS2 heterojunction Tunnel FET","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"No. 6-3",,2017,Aug.
"Tomohiro Amemiya,Toru Kanazawa,Satoshi Yamasaki,Shigehisa Arai","Metamaterial Waveguide Devices for Integrated Optic",,"Materials",,"Vol. 10","No. 9","pp. 1037",2017,Aug.
"Tomohiro Amemiya,toru kanazawa,takuo hiratani,daisuke inoue,zhichen gu,satoshi yamasaki,tatsuhiro urakami,shigehisa arai","Organic membrane photonic integrated circuits (OMPICs)",,"Optics Express",,"Vol. 25","No. 16","pp. 18537-18552",2017,Aug.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2",,"IEEE Transactions on Nanotechnology",,"Vol. 16","No. 4","pp. 582-587",2017,July
"Tomohiro Amemiya,Toru Kanazawa,Takuo Hiratani,Daisuke Inoue,Zhichen Gu,Satoshi Yamasaki,Tatsuhiro Urakami,Shigehisa Arai","Organic Membrane Photonic Waveguide with Metal Grating Couplers","The Conference on Lasers and Electro-Optics 2017 (CLEO 2017)",,,,"No. SF2I.7",,2017,May
"Vikrant UPADHYAYA,Toru KANAZAWA,Yasuyuki MIYAMOTO","Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation",,"IEICE Transactions on Electronics",,"Vol. E100-C","No. 5","pp. 453-457",2017,May
"Tomohiro Amemiya,Satoshi Yamasaki,Toru Kanazawa,Takuo Hiratani,Zhichen Gu,Atsushi Ishikawa,Nobuhiko Nishiyama,Takuo Tanaka,Tatsuhiro Urakami,SHIGEHISA ARAI","メタマテリアルフィルムを用いた近赤外光学迷彩の理論解析","第63回応用物理学関係連合講演会",,,,"No. 14p-F202-7",,2017,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Netsu Seikou,Vikrant Upadhyaya,Koichi Fukuda,YASUYUKI MIYAMOTO","HfS2系トンネルトランジスタのデバイスシミュレーション","第64回応用物理学会春季学術講演会",,,,," 16a-F203-3",2017,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Takuo Hiratani,SHIGEHISA ARAI,Tatsuhiro Urakami","有機薄膜光集積回路",,"月刊OPTRONICS",,"Vol. 423","No. 3","pp. 103-113",2017,Mar.
"Netsu Seikou,Toru Kanazawa,Vikrant Upadhyaya,ウワンノー ティーラユット,Tomohiro Amemiya,長汐 晃輔,YASUYUKI MIYAMOTO","Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET","第64回応用物理学会春季学術講演会",,,,," 16a-F203-4",2017,Mar.
"Tomohiro Amemiya,Satoshi Yamasaki,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","光回路とプラズモニックメタマテリアル","第37回レーザー学会年次大会",,,,"No. 07pII.7",,2017,Jan.
"Tomohiro Amemiya,Toru Kanazawa,Takuo Hiratani,Nobuhiko Nishiyama,SHIGEHISA ARAI,Tatsuhiro Urakami,Takuo Tanaka,Atsushi Ishikawa","光学迷彩とメタマテリアルフィルム",,"光技術コンタクト",,"Vol. 54","No. 11","pp. 27-36",2016,Nov.
"Toru Kanazawa,Vikrant Upadhyaya,Tomohiro Amemiya,Atsushi Ishikawa,鶴田 健二,Takuo Tanaka,YASUYUKI MIYAMOTO","HfO2パッシベーションによるHfS2 FETの特性改善","第77回応用物理学会秋季学術講演会",,,,"No. 16a-A32-3",,2016,Sept.
"Nobukazu Kise,Haruki Kinoshita,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain",,"Solid-State Electronics",,"Vol. 126",,"pp. 92-95",2016,Sept.
"Tomohiro Amemiya,Toru Kanazawa,Takuo Hiratani,Daisuke Inoue,Zhichen Gu,Tatsuhiro Urakami,SHIGEHISA ARAI","有機薄膜光集積回路：各素子の特性解析","第77回応用物理学会秋季学術講演会",,,,"No. 15p-B8-10",,2016,Sept.
"Tomohiro Amemiya,Satoshi Yamasaki,Toru Kanazawa,Takuo Hiratani,Junichi Suzuki,Nobuhiko Nishiyama,SHIGEHISA ARAI","メタマテリアルを用いたSi 導波路型光バッファの提案","第77回応用物理学会秋季学術講演会",,,,"No. 15p-B8-9",,2016,Sept.
"Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","二次元材料HfS2を用いたMOSトランジスタ",,"月刊機能材料",,"Vol. 36","No. 9","pp. 46-52",2016,Sept.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Effect of the HfO2 passivation on HfS2 Transistors","16th International Conference on Nanotechnology (IEEE NANO 2016)",,,,"No. ThAM11.3",,2016,Aug.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Tatsuhiro Urakami,Takuo Tanaka,Shigehisa Arai","(Invited) Permeability Engineering in Optical Communication Devices","The First A3 Metamaterials Forum",,," I-25",,,2016,July
"Vikrant Upadhyaya,Toru Kanazawa,YASUYUKI MIYAMOTO","Vacuum annealing and passivation of Hf2 FET for mitigation of atmospheric degradation","2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)",,,," A5-7","pp. 231-235",2016,July
"Tomohiro Amemiya,Toru Kanazawa,Tatsuhiro Urakami,Atsushi Ishikawa,Naoya Hojo,Akio Yasui,Nobuhiko Nishiyama,Takuo Tanaka,Shigehisa Arai","Metafilm: Metamaterial Array Embedded in Organic Thin Film","The Conference on Lasers and Electro-Optics 2016 (CLEO 2016)",,," FTh1D.2",,,2016,June
"Haruki Kinoshita,Nobukazu Kise,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","Compound Semiconductor Week (CSW2016)",,,," TuD4-2",,2016,June
"Tomohiro Amemiya,Toru Kanazawa,Takuo Hiratani,Zhichen Gu,Naoya Hojo,浦上 達宣,SHIGEHISA ARAI","有機薄膜光集積回路","電子情報通信学会 レーザ・量子エレクトロニクス研究会（LQE）, IEICE Technical Report, Vol. 116, No. 52, pp. 5-10, May 2016.",,,,,,2016,May
"Vikrant Upadhyaya,Toru Kanazawa,Yasuyuki Miyamoto","Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 48","pp. 47-50",2016,May
"Tomohiro Amemiya,Masato Taki,Toru Kanazawa,Takuo Hiratani,Shigehisa Arai","(Invited paper) Transformation Physics and Camouflage",,"IEICE Transactions on Electronics",,"Vol. J99-C","No. 4","pp. 67-83",2016,Apr.
"Upadhyaya Vikrant,kanazawa Toru,Miyamoto Yasuyuki","Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor","第63回応用物理学会春季学術講演会",,,," 21p-H103-2",,2016,Mar.
"Haruki Kinoshita,Nobukazu Kise,Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,," 22p-W541-5",,2016,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Few Layer HfS2 FET",,"Scientific Reports",,"Vol. 6",,"pp. 22277",2016,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Takuo Hiratani,Zhichen Gu,Naoya Hojo,Yuki Kuno,浦上 達宣,SHIGEHISA ARAI","有機薄膜光集積回路","第63回応用物理学会春季学術講演会",,,,"No. 21p-S321-3",,2016,Mar.
"Tomohiro Amemiya,Toru Kanazawa,浦上 達宣,Atsushi Ishikawa,Naoya Hojo,Akio Yasui,Nobuhiko Nishiyama,Takuo Tanaka,SHIGEHISA ARAI","Metafilm : メタマテリアルを内包した有機薄膜フィルム","第63回応用物理学会春季学術講演会",,,,"No. 21p-S321-2",,2016,Mar.
"Haruki Kinoshita,Nobukazu Kise,Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Takuo Tanaka,Kenji Tsuruta,Yasuyuki Miyamoto","HfS2 Electric Double Layer Transistor with High Drain Current","47th International Conference on Solid State Devices and Materials (SSDM 2015)",,,,,,2015,Sept.
"Haruki Kinoshita,Toru Kanazawa,Netsu Seikou,Yuichi Mishima,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス","第76回応用物理学会秋季学術講演会",,,,," 16a-1C-9",2015,Sept.
"H.Kinoshita,S.Netsu,Y.mishima,T.Kanazawa,Y.Miyamoto","Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain","11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)",,,,,,2015,Aug.
"S. Netsu,T. Kanazawa,Y. Miyamoto","Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"T. Kanazawa,T. Amemiya,A. Ishikawa,V. Upadhyaya,K. Tsuruta,T. Tanaka,Y. Miyamoto","Fabrication of Thin-Film HfS2 FET","73rd Device Research Conference (DRC)",,,,,,2015,June
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","(Invited) Possibility of permeability control on InP-based photonic integration platform","8th International Conference on Materiaals for Advanced Tachnologies (ICMAT 2015)",,,,"No. D2-PM2",,2015,June
"R Yamanaka,T. Kanazawa,E. Yagyu,Y. Miyamoto","Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique",,"Jpn. J. Appl.Phys.",,"Volume 54","Number S61",,2015,June
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","光通信素子における透磁率制御の可能性","第136回微小光学研究会",,,,,,2015,May
"Atsushi Ishikawa,Toru Kanazawa,Tomohiro Amemiya,Kenji Tsuruta,Takuo Tanaka,YASUYUKI MIYAMOTO","機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価","第62回応用物理学会春季学術講演会",,,,"No. 11a-P6-27",,2015,Mar.
"Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Haruki Kinoshita,Toru Kanazawa,Netsu Seikou,Yuichi Mishima,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,JoonHyun Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform",,"Scientific Reports",,"Vol. 5",,"pp. 8985",2015,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,YASUYUKI MIYAMOTO","薄膜HfS2 FET","第62回応用物理学会春季学術講演会",,,,"No. 14p-D7-6",,2015,Mar.
"Tomohiro Amemiya,Masato Taki,Toru Kanazawa,Takuo Hiratani,Shigehisa Arai","Optical Lattice Model Towards Nonreciprocal Invisibility Cloaking",,"IEEE Journal Quantum Electronics",,"Vol. 51","No. 3","pp. 6100110",2015,Jan.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability Engineering of Semiconductor Photonic Devices",,"Interferometers: Fundamentals, Methods and Applications (ISBN: 978-1-63483-692-0)","Nova Science Publishers",,,"pp. 15-36",2015,
"R. Yamanaka,T. Kanazawa,E. Yagyu,Y. Miyamoto","Normally-off AlGaN/GaN HEMT using Digital Etching Technique","2014 International Microprocesses and Nanotechnology Conference (MNC)",,,,,,2014,Nov.
"Ryota Yamanaka,Toru Kanazawa,柳生栄治,YASUYUKI MIYAMOTO","デジタルエッチングを用いたGaN HEMTのノーマリーオフ化","第75回応用物理学会秋季学術講演会",,,,,,2014,Sept.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,JoonHyun Kang,Zhichen Gu,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","［依頼講演］透磁率制御メタマテリアルを装荷した光変調器","電気情報通信学会 2014年ソサイエティ大会",,,,,,2014,Sept.
"YASUYUKI MIYAMOTO,Toru Kanazawa,Yosiharu Yonai,atsushi kato,Motohiko Fujimatsu,Masashi Kashiwano,Kazuto Ohsawa,Kazumi Ohashi","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,T. Irisawa,M. Oda,T. Tezuka","(Invited) Growth Process for High Performance of InGaAs MOSFETs","72nd Device Research Conference (DRC)",,,,,,2014,June
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","(Invited) Meta-photonics for Advanced InP-based Photonic Integration","the Collaborative Conference on Materials Research (CCMR) 2014",,,,"No. Day1. p.85",,2014,June
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"Yuichi Mishima,Toru Kanazawa,Haruki Kinoshita,Eiji Uehara,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET","第61回春季応用 物理学会学術講演会",,,,,,2014,Mar.
"Tomohiro Amemiya,Masato Taki,Toru Kanazawa,SHIGEHISA ARAI","Asymmetric Invisibility Cloaking Theory Based on the Concept of Effective Electromagnetic Fields for Photons","APS March Meeting 2014",,," Z50.00014",,,2014,Mar.
"Tomohiro Amemiya,Masato Taki,Toru Kanazawa,SHIGEHISA ARAI","光子における有効電磁場を使った非対称光学迷彩","第61回応用物理学関係連合講演会",,," 18p-E16-6",,,2014,Mar.
"Toru Kanazawa,Yuichi Mishima,Haruki Kinoshita,Eiji Uehara,YASUYUKI MIYAMOTO","MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET","電子情報通信学 会 電子デバイス研究会","IEICE technical report",,,,,2014,Jan.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,K. Ohsawa,M. Oda,T. Irisawa,T. Tezuka","Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density","44th IEEE Semiconductor Interface Specialists Conference (SICS 2013)",,,,,,2013,Dec.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","メタマテリアルを用いたInP系プラットフォームにおける透磁率制御","電子情報通信学会 光エレクトロニクス研究会（OPE）","IEICE Technical Report",,"Vol. 113","No. 370","pp. 45-50",2013,Dec.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","(Invited) Photonic metamaterials in semiconductor optical devices","2013 EMN Open Access Week",,,,,,2013,Oct.
"YASUYUKI MIYAMOTO,Toru Kanazawa","InGaAs MOSFETの現状と将来展望","電気学会 電子・情報・システム部門大会",,,,,,2013,Sept.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,," 2-9","pp. 19-20",2013,Sept.
"Kazuto Ohsawa,atsushi kato,Takeru Sagai,Toru Kanazawa,Eiji Uehara,YASUYUKI MIYAMOTO","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,Eijun Murai,Takahiko Shindo,J. Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial","The Conference on Lasers and Electro-Optics 2013 (CLEO 2013)",,,,"No. QM1A.6",,2013,June
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Miyouga,Eijun Murai,Takahiko Shindou,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析","第60回応用物理学関係連合講演会","第60回応用物理学関係連合講演会",," 29p-B3-14",,,2013,Mar.
"atsushi kato,Yosiharu Yonai,Toru Kanazawa,YASUYUKI MIYAMOTO","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第 60 回応用物理学会春季学術講演会",,,,,,2013,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,Eijun Murai,Takahiko Shindo,J. Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability-controlled Optical Modulator with Tri-gate Metamaterial","the 4th International Topical Meeting on Nanophotonics and Metamaterials (NANOMETA 2013)",,,,"No. FRI5o.2",,2013,Jan.
"YASUYUKI MIYAMOTO,Toru Kanazawa","MOSFET低電圧化の為のInGaAs チャネル","応用物理学会北陸・信越支部学術講演会",,,,,,2012,Nov.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Miyouga,Eijun Murai,Takahiko Shindou,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","---",,"第73回秋季応用物理学会学術講演会",,"Vol. 愛媛","No. 13p-C5-3",,2012,Sept.
"atsushi kato,Yosiharu Yonai,Toru Kanazawa,YASUYUKI MIYAMOTO","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第73 回応用物理学会学術講演会",,,,,,2012,Sept.
"Atsushi Kato,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,Yasuyuki Miyamoto","Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 904-919",2012,May
"YASUYUKI MIYAMOTO,Yosiharu Yonai,Toru Kanazawa","エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化","電気学会電子デバイス研究会",,,,,,2012,Mar.
"Yosiharu Yonai,Toru Kanazawa,Shunsuke Ikeda,YASUYUKI MIYAMOTO","InPエッチング異方性による微細InGaAsチャネルMOSFET","応用物理学会 2012年度春季大会",,,,,,2012,Mar.
"YASUYUKI MIYAMOTO,Yosiharu Yonai,Toru Kanazawa","エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化","電気学会電子デバイス研究会",,,,,,2012,Mar.
"YASUYUKI MIYAMOTO,Yosiharu Yonai,Toru Kanazawa","InGaAs MOSFETの高電流密度化","電子情報通信学会技術研究報告",,,,,,2012,Jan.
"YASUYUKI MIYAMOTO,Yosiharu Yonai,Toru Kanazawa","InGaAs MOSFETの高電流密度化","電子情報通信学会 電子デバイス研究会（ED）",,,,,,2011,Dec.
"YASUYUKI MIYAMOTO,Hisashi Saito,Toru Kanazawa","High-current-density InP ultrafine devices for high-speed operation","The International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)",,,,,,2011,Oct.
"YASUYUKI MIYAMOTO,Toru Kanazawa","InP系化合物半導体を用いたMOSFETの技術動向","電気学会 電子・情報・システム部門大会",,,,,,2011,Sept.
"Atsushi Kato,Toru Kanazawa,YASUYUKI MIYAMOTO","ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"Shunsuke Ikeda,Toru Kanazawa,YASUYUKI MIYAMOTO","電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"A. Kato,T. Kanazawa,S. Ikeda,Y. Yonai,YASUYUKI MIYAMOTO","Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"T. Kanazawa,R. Terao,S. Ikeda,Y. Miyamoto","MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm","23rd Int. Conf. Indium Phosphide and Related Materials (IPRM2011)",,,,,,2011,Sept.
"R. Terao,T. Kanazawa,S. Ikeda,Y. Yonai,A. Kato,Y. Miyamoto","InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm",,"Applied Phys. Exp.","The Japan Society of Applied Physics","vol. 4","no. 5"," 054201",2011,Apr.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,atsushi kato,YASUYUKI MIYAMOTO","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"Yosiharu Yonai,Toru Kanazawa,Shunsuke Ikeda,YASUYUKI MIYAMOTO","High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching","2011 IEEE International Electron Devices Meeting (IEDM 2011)",,,,,,2011,
"Y. Miyamoto,H. Saito,T. Kanazawa","Submicron-channel InGaAs MISFET with epitaxially grown source","10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)",,,,,,2010,Nov.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9"," 094201",2010,Sept.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer","2010 International Conference on Solid State Devices and Materials",,,,,"pp. 129-130",2010,Sept.
"Ryousuke Terao,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,atsushi kato,YASUYUKI MIYAMOTO","Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,atsushi kato,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Y. Miyamoto,T. Kanazawa,H. Saito","InGaAs MISFET with epitaxially grown source","The 3rd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies","InGaAs MISFET with epitaxially grown source",,,,,2010,June
"T. Kanazawa,K. Wakabayashi,H. Saito,R. Terao,T. Tajima,S. Ikeda,Y. Miyamoto,K. Furuya","Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"Ryousuke Terao,Toru Kanazawa,Hisashi Saito,kazuya wakabayashi,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"kazuya wakabayashi,Toru Kanazawa,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Tomonori Tajima,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","III-V族サブミクロンチャネルを有する高移動度MOSFET","電気学会電子デバイス研究会",,,,,,2010,Mar.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Tomonori Tajima,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric","IEICE Technical Report, Electron Devices","IEICE Technical Report, Electron Devices",,"Vol. 109","No. 360","pp. 39-42",2010,Jan.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"Toru Kanazawa,Hisashi Saito,Kazuya Wakabayashi,Ryousuke Terao,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region","2009 International Conference on Solid State Devices and Materials",,,,,"pp. 246-247",2009,Oct.
"Kazuya Wakabayashi,Toru Kanazawa,Hisashi Saito,Tomonori Tajima,Ryosuke Terao,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","I-V characteristics of undoped channel InP/InGaAs MOSFET with regrown source region","The 70th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,"pp. 1299",2009,Sept.
"Toru Kanazawa,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","High mobility III-V MOSFET with n+-source regrown by MOSFET","電気学会 電子・情報・システム部門大会",,,,,,2009,Sept.
"kazuya wakabayashi,Toru Kanazawa,Hisashi Saito,Tomonori Tajima,Ryousuke Terao,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"YASUYUKI MIYAMOTO,Toru Kanazawa,Hisashi Saito,KAZUHITO FURUYA","InGaAs/InP MISFET with epitaxially grown source","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD）",,,,,,2009,June
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,,,2009,May
"Hisashi Saito,Toru Kanazawa,Yasuyuki Miyamoto,Kazuhito Furuya","Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel","Technical Meeting on Electron Devices, IEE Jpn.",,,,,,2009,Mar.
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","I-V characteristics of III-V MOSFET with MOVPE regrown source region","The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies",,,,,,2009,Mar.
"YASUYUKI MIYAMOTO,Toru Kanazawa","III-V ナノデバイス","電子情報通信学会2009年全国大会",,,,,,2009,Mar.
"T. Kanazawa,H. Saito,K. Wakabayashi,Y. Miyamoto,K. Furuya","Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","Lateral buried growth of n+-InGaAs source/drain region for high drive current III-V channel MOSFET","The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,,2008,Sept.
"M. Watanabe,T. Kanazawa,M. Asada","Transmission Electron Microscopy Analysis of CaF2/CdF2/CaF2 Resonant Tunneling Diode Structures grown on Si(100) Substrate","The 34th International Symposium on Compound Semiconductors (ISCS2007)",,,"Vol. TuD P8",,"pp. 222",2007,Oct.
"T. Kanazawa,A. Morosawa,R. Fuji,T. Wada,M. Watanabe,M. Asada","Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy",,"Jpn. J. Appl. Phys.",,"Vol. 46","No. 6A","pp. 3388-3390",2007,June
"Toru Kanazawa","Si(100)基板上CaF2/CdF2ヘテロ構造を用いた共鳴トンネル集積デバイスの基礎研究",,,,,,,2007,Mar.
"T. Kanazawa,M. Watanabe,M. Asada","Room temperature negative differential resistance of CdF2/CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates",,"Appl. Phys Lett.",,"Vol. 90","No. 9","pp. 092101-1-092101-3",2007,Feb.
"T. Kanazawa,R. Fujii,T. Wada,Y. Suzuki,M. Watanabe,M. Asada","Control of NDR Characteristics of CdF2/CaF2 RTDs Using Nano-Area Local Growth on Si(100) Substrates","2006 International Microprocesses and Nanotechnology Conference",,,"Vol. 27B-11-7",,"pp. 410-411",2006,Oct.
"T. Kanazawa,R. Fujii,T. Wada,Y. Suzuki,M. Watanabe,M. Asada","I-V characteristics of CdF2/CaF2 resonant tunneling diodes on Si(100) substrate by nano-area local growth method","The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys",,," 30p-RE-14"," 3"," 1266",2006,Aug.
"T. Kanazawa,A. Morosawa,R. Fujii,T. Wata,M. Watanabe,M. Asada","Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth","電子情報通信学会（電子デバイス研究会）",,,"Vol. 105","No. 550"," 11-14",2006,Jan.
"T. Kanazawa,A. Morosawa,M. Watanabe,M. Asada","High peak-to-valley current ratio of CdF2/CaF2 resonant tunneling diode grown on Si(100) substrates","2005 International conference on Solid State Devices and Materials",,,"Vol. G-1-7",,"pp. 162-163",2005,Sept.
"MASAHIRO WATANABE,Toru Kanazawa,浅田雅弘","Growth temperature dependence of CdF2/CaF2 resonant tunneling diode structures on Si(100) substrate","The 65th Autumn Meeting of The Jpn. Soc. Of Appl. Phys",,," 2a-ZK-4"," 3"," 1223",2004,Sept.
"M. Watanabe,T. Kanazawa,K. Jinen,M. Asada","Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode Grown on Si(100) Substrate","2004 Silicon Nanoelectronics Workshop","2004 Silicon Nanoelectronics Workshop,9-20",,"Vol. 9-20",,"pp. 145-146",2004,June
"T. Kanazawa,M. Matsuda,M. Watanabe,M. Asada","Structure dependence of negative differential resistance characteristics of CdF2/CaF2 resonant tunneling diode on Si(100) substrate","The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys",,," 30p-ZF-14"," 3"," 1253",2003,Aug.
"M. Watanabe,M. Matsuda,H. Fujioka,T. Kanazawa,M. Asada","Memory Effect of CdF2/CaF2 Resonant Tunneling Diode grown on p-type Silicon Substrate","The 11th International Conference on Modulated Semiconductor Structures -MSS11-",,," PC47",,"pp. 454-455",2003,July
"M. Watanabe,M. Matsuda,H. Fujioka,T. Kanazawa,M. Asada","Structure Dependence of Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diode grown by Local Epitaxy on Silicon","2003 Silicon Nanoelectronics Workshop","2003 Silicon Nanoelectronics Workshop, 8-07",,"Vol. 8-07",,"pp. 106-107",2003,June
"M. Matsuda,T. Kanazawa,M. Watanabe,M. Asada","Memory effect due to charge and discharge of CdF2/CaF2 resonant tunneling diode","The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies",,," 29a-ZE-5"," 3"," 1469",2003,Mar.
"T. Kanazawa,M. Matsuda,M. Watanabe,M. Asada","Fabrication and characterization of CdF2/CaF2 resonant tunneling diode on double step Si(100) 2°off substrate","The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies",,," 29a-ZE-3"," 3"," 1469",2003,Mar.
"M. Watanabe,T. Ishikawa,M. Matsuda,T. Kanazawa,M. Asada","Systematic variation of negative differential resistance characteristics of CdF2/CaF2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy","The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02)","The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3",,"Vol. Tu4-3",,"pp. 103-106",2002,Sept.
"M. Watanabe,T. Ishikawa,M. Matsuda,T. Kanazawa,M. Asada","Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy","26th International Conference on the Physics of Semiconductors","26th International Conference on the Physics of Semiconductors, P157",,"Vol. P157",,"pp. 219",2002,July
"Toru Kanazawa,M. Matsuda,T. Ishikawa,T. Kanazawa,M. Watanabe,M. Asada","Fabrication and characterization of CdF2/CaF2 resonant tunneling diode on Si(100) substrate","The 49th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies",,," 27p-YH-3"," 3"," 1374",2002,Mar.