"W Zhang,S. Netsu,T. Kanazawa,T. Amemiya,Y. Miyamoto","Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor",,"Jpn. J. Appl. Phys",,"  58, SBBH02 (2019)",,,2019,Jan.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  M-7-03",2018,Sept.
"Wenlun Zhang,Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET","第79回応用物理学会秋季学術講演会",,,,,"  19a-212B-5",2018,Sept.
"Shinjiro Iwata,Kazumi Ohashi,Netsu Seikou,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-6",2018,Sept.
"Seiko Netsu,Toru Kanazawa,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type-II HfS2/MoS2 Heterojunction Transistors",,"IEICE Transactions on Electronics",,"Vol. E101-C","No. 5","pp. 338-342",2018,May
"S. Netsu,M. Hellenbrand,C. B. Zota,Y. Miyamoto,E. Lind","A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs",,"IEEE Journal of the Electron Devices Society",,"Vol. 6","  issue. 1","pp. 408-412 (2018).",2018,Feb.
"Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","HfS2/MoS2 ヘテロジャンクションの温度依存電流特性","第78回応用物理学会秋季学術講演会",,,,"No. 7p-C11-16",,2017,Sept.
"Seiko Netsu,Toru Kanazawa,Vikrant Upadhyaya,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type II HfS2/MoS2 heterojunction Tunnel FET","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"No. 6-3",,2017,Aug.
"Kazuto Ohsawa,Shinji Noguchi,Netsu Seikou,Nobukazu Kise,YASUYUKI MIYAMOTO","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S","  04CG05 2017",2017,Mar.
"Netsu Seikou,Toru Kanazawa,Vikrant Upadhyaya,ウワンノー ティーラユット,Tomohiro Amemiya,長汐 晃輔,YASUYUKI MIYAMOTO","Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-4",2017,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Netsu Seikou,Vikrant Upadhyaya,Koichi Fukuda,YASUYUKI MIYAMOTO","HfS2系トンネルトランジスタのデバイスシミュレーション","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-3",2017,Mar.
"Kazuto Ohsawa,Shinji Noguchi,Netsu Seikou,Nobukazu Kise,YASUYUKI MIYAMOTO","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.
"Haruki Kinoshita,Nobukazu Kise,Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,"  22p-W541-5",,2016,Mar.
"Haruki Kinoshita,Nobukazu Kise,Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"Haruki Kinoshita,Toru Kanazawa,Netsu Seikou,Yuichi Mishima,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-9",2015,Sept.
"H.Kinoshita,S.Netsu,Y.mishima,T.Kanazawa,Y.Miyamoto","Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain","11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)",,,,,,2015,Aug.
"S. Netsu,T. Kanazawa,Y. Miyamoto","Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"Haruki Kinoshita,Toru Kanazawa,Netsu Seikou,Yuichi Mishima,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.