"Y. Takamura,T. Akushichi,A. Sadono,T. Okishio,Y. Shuto,S. Sugahara","Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices",,"J. Appl. Phys.","AIP Publishing LLC.","vol. 115","no. 17","pp. 17C307/1-3",2014,Apr.
"Y. Takamura,A. Sadono,T. Akushichi,T. Okishio,Y. Shuto,S. Sugahara","Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector","The 61st JSAP Spring Meeting, 2014",,,,,,2014,Mar.
"Y. Takamura,A. Sadono,T. Akushichi,T. Okishio,Y. Shuto,S. Sugahara","Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices","The 58th Annual Magnetism and Magnetic Materials (MMM) Conference",,,,,"  AX-05",2013,Nov.
"Takao Okishio,Yota Takamura,SATOSHI SUGAHARA","CoFe/Mg/AlOx/Siデピン接合を用いた低バリア強磁性ソース/ドレインMOSFET","第16回半導体スピン工学の基礎と応用(PASPS-16)",,,,,"p. 75",2011,Nov.
"T. Okishio,Y. Takamura,S. Sugahara","Low-barrier ferromagnet source/drain MOSFETs using CoFe/Mg/AlOx/Si depinning contacts","International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists",,,"  paper P-42",,"pp. 131-132",2011,Oct.
"T. Okishio,Y. Takamura,S. Sugahara","Fabrication of spin-MOSFETs using CoFe/Mg/AlOx/Si tunnel junctions for the source and drain","International Conf. on Solid State Devices and Materials (SSDM)",,,"  J-4-4",,"p. 31",2011,Sept.
"Takao Okishio,Yota Takamura,SATOSHI SUGAHARA","CoFe/Mg/AlOx/Siトンネル構造をソース/ドレインに用いたスピンMOSFETの作製","第72回応用物理学会学術講演会",,,"  1p-P10-25",,,2011,Aug.