"Shinjiro Iwata,Kazumi Ohashi,Netsu Seikou,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-6",2018,Sept.
"Nobukazu Kise,Shinjiro Iwata,Ryousuke Aonuma,YASUYUKI MIYAMOTO","[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,,"  C804",,2017,May
"Ryousuke Aonuma,Shinjiro Iwata,Nobukazu Kise,YASUYUKI MIYAMOTO","68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET","電気学会電子デバイス研究会",,,,,"  EDD-17-051",2017,Mar.
"Shinjiro Iwata,Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Y. Miyamoto,W. Lin,S.Iwata,K. Fukuda","Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)","The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)",,,,,"  A6-I-01",2016,July
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,Yasuyuki Miyamoto","Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070303",2016,June
"Shinjiro Iwata,Kazumi Ohashi,Wenbo Lin,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性",,"電気学会論文誌C",,"Vol. 136","no. 4","pp. 467-473",2016,Apr.
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,YASUYUKI MIYAMOTO","Contribution to Off-Current of Source-Drain Direct Tunneling in Short-Channel TFET","The 63rd JSAP Spring Meeting 2016",,,,,,2016,Mar.
"S. Iwata,W. Lin,K. Fukuda,Y. Miyamoto","Design of drain for low off current in GaAsSb/InGaAs tunnel FETs","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Y. Miyamoto,M. Fujimatsu,K. Ohashi,A. Yukimachi,S. Iwata","Steep subthreshold slope in InGaAs MOSFET","SemiconNano2015",,,,,,2015,Sept.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"K. Ohashi,M. Fujimatsu,S. Iwata,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs",,"Jpn. J. Appl.Phys.",,"Vol. 54","Number 4S",,2015,Apr.
"Shinjiro Iwata,Kazumi Ohashi,YASUYUKI MIYAMOTO","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性","電子情報通信学会 総合大会",,,,,,2015,Mar.