"Yuuya Kurosawa,N Kadotani,Tsunaki Takahashi,Teruyuki Ohashi,SHUNRI ODA,Ken Uchida","不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響","第74回応用物理学会秋季学術講演会",,,,,,2013,Sept.
"Yuuya Kurosawa,N Kadotani,Tsunaki Takahashi,Teruyuki Ohashi,SHUNRI ODA,Ken Uchida","ナノ薄膜SOI における不純物のイオン化エネルギー増大","第59回応用物理学関係連合講演会",,,,,"  17a-A1-4",2012,Mar.
"N. Kadotani,T. Ohashi,T. Takahashi,S. Oda,K. Uchida","Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors",,"Japanese Journal of Applied Physics",,"Vol. 50",,"pp. 094101 (7 pages)",2011,Sept.
"N Kadotani,Tsunaki Takahashi,大橋輝之,Tetsuo Kodera,SHUNRI ODA,Ken Uchida","高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"N. Kadotani,T. Takahashi,T. Ohashi,S. Oda,K. Uchida","Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm",,"Journal of Applied Physics",,"Vol. 110",,"pp. 034502. (7 pages)",2011,
"N. Kadotani,T. Takahashi,K. Chen,T. Kodera,S. Oda,K.  Uchida","Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3","EDM2010",,,,,,2010,Dec.
"N Kadotani,Tsunaki Takahashi,Tetsuo Kodera,SHUNRI ODA,Ken Uchida","pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価","第71回応用物理学会学術講演会",,,"  16a-ZE-2",,,2010,Sept.