"‘å“à‘ñŽÀ,’·”ö�r—S,’†‘º—æ—Y,’|‘º�Wˆê,Žu‘º•‘–],’ª“c—º‘¾,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-B •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô‚É‚¨‚¯‚éŠî”ˆˑ¶�«","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2022,Mar.
"‘å“à‘ñŽÀ,’†‘º—æ—Y,’|‘º�Wˆê,Žu‘º•‘–],’ª“c—º‘¾,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-B•\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","2021”N“ú–{•\–Ê�^‹óŠw‰ïŠw�p�u‰‰‰ï",,,,,,2021,Nov.
"T. Ouchi,L. Nakamura,K. Takemura,M. Shimura,R. Ushioda,T. Iimori,F. Komori,H. Hirayama,K. Nakatsuji","Electronic structure of Bi(110) ultra-thin films grown on n-type Si(111)�ã3�~�ã3-B substrates","13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC�f21)",,,,,,2021,Oct.
"’†‘º—æ—Y,�Ÿ–“˜B,’ª“c—º‘¾,‘å“à‘ñŽÀ,�¬�X•¶•v,”Ñ�·‘ñŽk,•½ŽR”Ž ”V,’†’ÒŠ°","n-type Si(111)�ã3�~�ã3-B •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2021,Mar.
"�Ÿ–“˜B,’†‘º—æ—Y,‹à–ì’B,–Ø‘º�²”Ž,‘å“à‘ñŽÀ,‰i—FŒc,“c’†˜a–ç,‰º�ì—T—�,�¬àVŒ’ˆê,ŠÔ�£ˆê•F,�¬�X•¶•v,”Ñ�·‘ñŽk,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-(Bi,In)•\–Ê‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2021,Mar.
"‹à–ì’B,�Ÿ–“˜B,–Ø‘º�²”Ž,’†‘º—æ—Y,�”ŠÑ—º‘¾,ŽR�èŽ�˜Y,�¬àVŒ’ˆê,ŠÔ�£ˆê•F,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(110)3�~2-Bi•\–Ê‚Ì“dŽq�ó‘Ô","2020”N“ú–{•\–Ê�^‹óŠw‰ïŠw�p�u‰‰‰ï",,,,,,2020,Nov.
"‹à–ì’B,�Ÿ–“˜B,–Ø‘º�²”Ž,’†‘º—æ—Y,ŽR�èŽ�˜Y,�¬àVŒ’ˆê,ŠÔ�£ˆê•F,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(110)3x2-Bi•\–Ê‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï‘æ75‰ñ”NŽŸ‘å‰ï",,,,,,2020,Mar.