"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9","  094201",2010,Sept.
"T. Kanazawa,K. Wakabayashi,H. Saito,R. Terao,T. Tajima,S. Ikeda,Y. Miyamoto,K. Furuya","Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"若林和也,金澤 徹,齋藤尚史,寺尾良輔,池田俊介,宮本恭幸,古屋一仁","再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"金澤 徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","III-V族サブミクロンチャネルを有する高移動度MOSFET","電気学会電子デバイス研究会",,,,,,2010,Mar.
"寺尾良輔,金澤 徹,齋藤尚史,若林和也,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"金澤徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET","電子情報通信学会 電子デバイス研究会","電子情報通信学会技術研究報告 電子デバイス",,"Vol. 109","No. 360","pp. 39-42",2010,Jan.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"Toru Kanazawa,Hisashi Saito,Kazuya Wakabayashi,Ryousuke Terao,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region","2009 International Conference on Solid State Devices and Materials",,,,,"pp. 246-247",2009,Oct.
"若林 和也,金澤 徹,齋藤 尚史,田島 智宣,寺尾 良輔,宮本 恭幸,古屋 一仁","再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,"pp. 1299",2009,Sept.
"金澤徹,齋藤尚史,若林和也,田島智宣,宮本恭幸,古屋一仁","MOVPE再成長n<sup>+</sup>ソースを有する?-?族高移動度チャネルMOSFET","電気学会 電子・情報・システム部門大会",,,,,,2009,Sept.
"若林和也,金澤 徹,齋藤尚史,田島智宣,寺尾良輔,宮本恭幸,古屋一仁","「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,,,2009,May
"金澤徹,古屋一仁,宮本恭幸,齋藤尚史,若林和也,田島智宣","MOVPE再成長ソースを有するIII-V族MOSFETの電流特性","第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"T. Kanazawa,H. Saito,K. Wakabayashi,Y. Miyamoto,K. Furuya","Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"金澤徹,古屋一仁,宮本恭幸,齋藤尚史,若林和也,田島智宣","?-?族高駆動能力MOSFETへ向けたn<sup>+</sup>-InGaAsソース/ドレイン層の横方向埋め込み成長","第69回応用物理学会学術講演会",,,,,,2008,Sept.