"Takuya Hoshii,Rumi Takayama,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate","International Conference on Solid-State Devices and Materials (SSDM2017)",,,,,,2017,Sept.