"Seiko Netsu,Toru Kanazawa,Vikrant Upadhyaya,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type II HfS2/MoS2 heterojunction Tunnel FET","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"No. 6-3",,2017,Aug.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2",,"IEEE Transactions on Nanotechnology",,"Vol. 16","No. 4","pp. 582-587",2017,July
"Vikrant UPADHYAYA,Toru KANAZAWA,Yasuyuki MIYAMOTO","Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation",,"IEICE Transactions on Electronics",,"Vol. E100-C","No. 5","pp. 453-457",2017,May
"‹ààV “O,‰J‹{ ’q�G,”I’à �½�W,Vikrant Upadhyaya,•Ÿ“c �_ˆê,‹{–{ ‹±�K","HfS2Œnƒgƒ“ƒlƒ‹ƒgƒ‰ƒ“ƒWƒXƒ^‚̃fƒoƒCƒXƒVƒ~ƒ…ƒŒ�[ƒVƒ‡ƒ“","‘æ64‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,"  16a-F203-3",2017,Mar.
"”I’à �½�W,‹ààV “O,Vikrant Upadhyaya,ƒEƒ�ƒ“ƒm�[ ƒeƒB�[ƒ‰ƒ†ƒbƒg,‰J‹{ ’q�G,’·Ž¬ �W•ã,‹{–{ ‹±�K","Type II Œ^ HfS2/MoS2ƒwƒeƒ�ƒWƒƒƒ“ƒNƒVƒ‡ƒ“‚ð—L‚·‚éTFET","‘æ64‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,"  16a-F203-4",2017,Mar.
"‹ààV “O,Vikrant Upadhyaya,‰J‹{ ’q�G,�Î�ì “Ä,’ß“c Œ’“ñ,“c’† ‘ñ’j,‹{–{ ‹±�K","HfO2ƒpƒbƒVƒx�[ƒVƒ‡ƒ“‚É‚æ‚éHfS2 FET‚Ì“Á�«‰ü‘P","‘æ77‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,"No. 16a-A32-3",,2016,Sept.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Effect of the HfO2 passivation on HfS2 Transistors","16th International Conference on Nanotechnology (IEEE NANO 2016)",,,,"No. ThAM11.3",,2016,Aug.
"Vikrant Upadhyaya,Toru Kanazawa,YASUYUKI MIYAMOTO","Vacuum annealing and passivation of Hf<sub>2</sub> FET for mitigation of atmospheric degradation","2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)",,,,"  A5-7","pp. 231-235",2016,July
"Vikrant Upadhyaya,Toru Kanazawa,Yasuyuki Miyamoto","Evaluation of electrical properties of HfS<sub>2</sub> thin flakes obtained by mechanical exfoliation","“dŽq�î•ñ’Ê�MŠw‰ï“dŽqƒfƒoƒCƒXŒ¤‹†‰ï","�MŠw‹Z•ñ",,"vol. 116","no. 48","pp. 47-50",2016,May
"Upadhyaya Vikrant,kanazawa Toru,Miyamoto Yasuyuki","Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor","‘æ63‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,"  21p-H103-2",,2016,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Few Layer HfS2 FET",,"Scientific Reports",,"Vol. 6",,"pp. 22277",2016,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Takuo Tanaka,Kenji Tsuruta,Yasuyuki Miyamoto","HfS2 Electric Double Layer Transistor with High Drain Current","47th International Conference on Solid State Devices and Materials (SSDM 2015)",,,,,,2015,Sept.
"T. Kanazawa,T. Amemiya,A. Ishikawa,V. Upadhyaya,K. Tsuruta,T. Tanaka,Y. Miyamoto","Fabrication of Thin-Film HfS2 FET","73rd Device Research Conference (DRC)",,,,,,2015,June