"‘β –Ύ‘Χ,Βΐ —Ι‰ξ,–x“c qŽj,‹ΰˆδ Ž΅d,αΑ•Η —E•v,‹g“c ¬‹P,‹{–{ ‹±K","N‹Ι«GaN HEMTμ»ƒvƒƒZƒX‚Ι‚¨‚―‚ιƒvƒ‰ƒYƒ}ƒ_ƒ[ƒW‚Μ’αŒΈ","‘ζ80‰ρ ‰ž—p•¨—Šw‰ο H‹GŠwpu‰‰‰ο",,,,,"  18p-N302-11",2019,Sept.
"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure",,"Jpn. J. Appl. Phys",,"  58, (2019)","  SC","  SCCD14",2019,May
"A. Hayasaka,R. Aonuma,K. Hotta,I. Makabe,S. Yoshida,Y. Miyamoto","N-polar GaN HEMT with Al2O3 gate insulator","Compound Semiconductor Week 2019",,,,,"  MoP-G-8 (Poster)",2019,May
"‘β –Ύ‘Χ,Βΐ —Ι‰ξ,–x“c qŽj,αΑ•Η —E•v,‹g“c ¬‹P,‹{–{ ‹±K","Al2O3ƒQ[ƒgβ‰–Œ‚πŽ‚ΒN‹Ι«GaN HEMT","‘ζ66‰ρ‰ž—p•¨—Šw‰οt‹GŠwpu‰‰‰ο",,,,,"  9p-M121-13",2019,Mar.
"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure","International Workshop on Nitride Semiconductors  (IWN 2018)",,,,,,2018,Nov.
"–x“c qŽj,•x’Λ ‚δ‚έŽq,”ΒŠ_ Œυ—S,αΑ•Η —E•v,‹g“c ¬‹P,‹{–{ ‹±K","N‹Ι«GaN HEMT\‘’‚ΜƒRƒ“ƒ^ƒNƒg’οR‚Μ”Mˆ—‰·“xˆΛ‘Ά«","‘ζ79‰ρ‰ž—p•¨—Šw‰οH‹GŠwpu‰‰‰ο",,,,,"  20p-331-10",2018,Sept.