"H.Moriya,S.Hino,N.Miura,T.Oomori,E.Tokumitsu","Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties","7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)",,,,,,2008,Sept.
"“ú–ìŽj˜Y,”¨ŽR ’q—T,‰Á“¡��,Žç’J�m,ŽO‰Y �¬‹v,‘å�X ’B•v,“¿Œõ‰i•ã","‹É”––ŒŽ_‰»–Œ‚ð—p‚¢‚½Al2O3/SiC MOSFET‚̃`ƒƒƒlƒ‹ˆÚ“®“x‚ÌŒü�ã�i?�j","‘æ‚U‚W‰ñ ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï","‘æ‚U‚W‰ñ ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï",,,"No. 6p-ZN-9/?",,2007,Sept.
"H. Sauddin,Y. Sasaki,H. Ito,B. Mizuno,P. Ahmet,K. Kakushima,N. Sugii,K. Tsutsui,H. Iwai","Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping","2006 Joint International Meeting of ECS",,,,,,2006,Oct.