"Takatoshi Orui,Johannes Herms,Yuichiro Hanyu,Shigenori Ueda,Ken Watanabe,Isao Sakaguchi,Naoki Ohashi,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Charge Compensation by Excess Oxygen in Amorphous In-Ga-Zn-O Films Deposited by Pulsed Laser Deposition",,"J. Disp. Technol.",,"Vol. 11",,"pp. 518-522",2015,
"Jakub Grochowski,Yuichiro Hanyu,Katsumi Abe,Jakub Kaczmarski,Jan Dyczewski,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure",,"J. Disp. Technol.",,"Vol. 11",,"pp. 523-527",2015,
"Y. Hanyu,K. Abe,K. Domen,K. Nomura,H. Hiramatsu,H. Kumomi,H. Hosono,T. Kamiya","Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs",,"J. Displ. Technol.",,,,"pp. 979-983",2014,
"TOSHIO KAMIYA,K. Kimoto,N. Ohashi,Katsumi Abe,Yuichirou Hanyu,hideya kumomi,HIDEO HOSONO","Electron-Beam-Induced Crystallization of Amorphous In-Ga-Zn-O Thin Films Fabricated by UHV Sputtering","Proc. IDW'13",,,,,"p. 280",2013,Dec.
"Yuichiro Hanyu,Kay Domen,Kenji Nomura,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors",,"Appl. Phys. Lett.",,"Vol. 103","No. 20","pp. 202114-1 - 3",2013,Nov.