"K. Kakushima,J. Kanehara,Y. Izumi,T. Muro,T. Kinoshita,P. Ahmet,K. Tsutsui,T. Hattori,H. Iwai","Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy","2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011)",,,,,,2011,Sept.