"T. Aota,A. Hayasaka,I. Makabe,S. Yoshida,T. Gotow,Y. Miyamoto","Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction",,"Japanese Journal of Applied Physics",,"  60","  SCCF06",,2021,Mar.
"Tomoya Aota,Akihiro Hayasaka,isao makabe,Shigeki Yoshida,Takahiro Gotow,YASUYUKI MIYAMOTO","Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction","33rd International Microprocesses and Nanotechnology Conference (MNC 2020)",,,,,,2020,Nov.
"青田 智也,早坂 明泰,眞壁 勇夫,吉田 成輝,後藤 高寛,宮本 恭幸","N極性GaN HEMT構造での無電極PECエッチング","第81回 応用物理学会秋季学術講演会",,,,,,2020,Sept.
"毛利 匡裕,早坂 明泰,眞壁 勇夫,吉田 成輝,後藤 高寛,宮本 恭幸","N極性GaN HEMT構造におけるコンタクト抵抗の低減","第67回 応用物理学会 春季学術講演会",,,,,"  12p-B401-12",2020,Mar.
"早坂 明泰,青沼 遼介,堀田 航史,金井 七重,眞壁 勇夫,吉田 成輝,宮本 恭幸","N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減","第80回 応用物理学会 秋季学術講演会",,,,,"  18p-N302-11",2019,Sept.
"A. Hayasaka,R. Aonuma,K. Hotta,I. Makabe,S. Yoshida,Y. Miyamoto","N-polar GaN HEMT with Al2O3 gate insulator","Compound Semiconductor Week 2019",,,,,"  MoP-G-8 (Poster)",2019,May
"早坂 明泰,青沼 遼介,堀田 航史,眞壁 勇夫,吉田 成輝,宮本 恭幸","Al2O3ゲート絶縁膜を持つN極性GaN HEMT","第66回応用物理学会春季学術講演会",,,,,"  9p-M121-13",2019,Mar.