"木下 治紀,金澤 徹,祢津 誠晃,三嶋 裕一,宮本 恭幸","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-9",2015,Sept.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"H.Kinoshita,S.Netsu,Y.mishima,T.Kanazawa,Y.Miyamoto","Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain","11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)",,,,,,2015,Aug.
"K. Ohsawa,Y. Mishima,Y. Miyamoto","Operation of 13-nm channel length InGaAs-MOSFET with n-InP source","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"木下 治紀,金澤 徹,祢津 誠晃,三嶋 裕一,宮本 恭幸","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"大澤 一斗,三嶋 裕一,宮本 恭幸","InGaAs-MOSFETのチャネル長微細化に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,T. Irisawa,M. Oda,T. Tezuka","(Invited) Growth Process for High Performance of InGaAs MOSFETs","72nd Device Research Conference (DRC)",,,,,,2014,June
"三嶋裕一,金澤徹,木下治紀,上原英治,宮本恭幸","再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET","第61回春季応用 物理学会学術講演会",,,,,,2014,Mar.
"金澤徹,三嶋裕一,木下治紀,上原英治,宮本恭幸","MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET","電子情報通信学 会 電子デバイス研究会","IEICE technical report",,,,,2014,Jan.