"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"ŽO“ˆ—Tˆκ,‹ΰΰV“O,–Ψ‰ΊŽ‘‹I,γŒ΄‰pŽ‘,‹{–{‹±K","Δ¬’·ƒ\[ƒX/ƒhƒŒƒCƒ“‚π—L‚·‚ιInGaAsƒ`ƒƒƒlƒ‹ƒgƒ‰ƒCƒQ[ƒgMOSFET","‘ζ61‰ρt‹G‰ž—p •¨—Šw‰οŠwpu‰‰‰ο",,,,,,2014,Mar.
"‹ΰΰV“O,ŽO“ˆ—Tˆκ,–Ψ‰ΊŽ‘‹I,γŒ΄‰pŽ‘,‹{–{‹±K","MOVPEΔ¬’·ƒ\[ƒX/ƒhƒŒƒCƒ“‚π—L‚·‚ιInGaAsƒgƒ‰ƒCƒQ[ƒgMOSFET","“dŽqξ•ρ’ʐMŠw ‰ο “dŽqƒfƒoƒCƒXŒ€‹†‰ο","IEICE technical report",,,,,2014,Jan.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,,"  2-9","pp. 19-20",2013,Sept.
"‘εΰVˆκ“l,‰Α“‘~,²‰κˆδŒ’,‹ΰΰV“O,γŒ΄‰pŽ‘,‹{–{‹±K","‚“d—¬–§“x‰»‚ΙŒό‚―‚½InPƒ\[ƒX‚π—L‚·‚ιIII-V-OI InGaAs MOSFET‚Μƒ`ƒƒƒlƒ‹ŒϊˆΛ‘Ά«","‘ζ74‰ρH‹G‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2013,Sept.
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"²‰κˆδ Œ’,γŒ΄ ‰pŽ‘,‘εΰV ˆκ“l,‹{–{ ‹±K","n-InP ƒ\[ƒX‚πŽ‚ΒT ƒP?[ƒg\‘’ InGaAs-MOSFET ‚̍‚Žό”g“Α«","2013”N“dŽqξ•ρ’ʐMŠw‰ο‘‡‘ε‰ο",,,,,,2013,Mar.