"J. Kotani,K. Makiyama,T. Ohki,S. Ozaki,N. Okamoto,Y. Minoura,M. Sato,N. Nakamura,Y. Miyamoto","High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers",,"ELECTRON. LETT.",,"vol. 59","no. 4","  e12715",2023,Feb.
"K. Makiyama,S. Yoshida,K. Nakata,Y. Miyamoto","Innovative RF Device Technologies for Advanced Information and Communications Network Society","IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium",,,,,,2022,Oct.
"Y. Miyamoto,K. Makiyama","Lateral thickness change of the high-k film on GaN HEMT for uniform electric field","14th Topical Workshop on Heterostructure Microelectronics, (TWHM 2022)",,,,,,2022,Aug.
"K. Makiyama,T. Ohki,S. Ozaki,Y. Niida,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,T. Ishiguro,K. Joshin,N. Nakamura,Y. Miyamoto","InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)","International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017 )",,,,,"  30-Nitride-3",2017,Sept.
"K. Makiyama,S. Ozaki,Y. Niida,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Yoichi Kamada,K. Joshin,N. Nakamura,Yasuyuki Miyamoto","Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)","12th International Conference on Nitride Semiconductor (ICNS)",,,,"  C1,1",,2017,July
"K. Makiyama,Y. Niida,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","GaN HEMT Device Technology for W-band Power Amplifiers (Invited)","Compound Semiconductor Week 2017",,,,"  A6-1",,2017,May
"K. Makiyama,Y. Niida,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)","2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)",,,,,,2016,Oct.
"牧山剛三","ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築",,,,,,,2016,Sept.
"牧山剛三","ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築",,,,,,,2016,Sept.
"牧山剛三","ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築",,,,,,,2016,Sept.
"牧山剛三","ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築",,,,,,,2016,Sept.
"K. Makiyama,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,Y. Niida,Y. Kamada,M. Sato,K. Joshin,K. Watanabe,Y. Miyamoto","High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)","URSI AP-RASC 2016",,,,,,2016,Aug.
"K. Makiyama,S. Ozaki,Y. Niida,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)","2016 Lester Eastman Conference (LEC)",,,,,"pp. 31-34",2016,Aug.
"K. Makiyama,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,Y. Niida,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz","2015 IEEE International Electron Devices Meeting (IEDM)",,,,,,2015,Dec.