"永久雄一","スイッチング素子応用を目指したグラフェン電界効果トランジスタのオン/オフ比向上に関する研究",,,,,,,2014,Sept.
"永久雄一","スイッチング素子応用を目指したグラフェン電界効果トランジスタのオン/オフ比向上に関する研究",,,,,,,2014,Sept.
"永久雄一","スイッチング素子応用を目指したグラフェン電界効果トランジスタのオン/オフ比向上に関する研究",,,,,,,2014,Sept.
"Yuichi Nagahisa,Yuichi Harada,Eisuke Tokumitsu","Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions",,"Appl. Phys. Lett.",,"Vol. 103","No. 22","pp. 223503-1-4",2013,Dec.
"永久雄一,徳光永輔","SiC上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み（?）","SiC及び関連半導体研究会 第２２回講演会",,,,,"pp. 170",2013,Dec.
"Yuichi Nagahisa,Eisuke Tokumitsu","Electrical characterization of gate modulation in graphene/n-SiC contacts","5th International conference on Recent Progress in Graphene Research",,,,,,2013,Sept.
"Y.Nagahisa,Y.Harada,E. Tokumitsu","Observation of High on/off Drain Current Ratio in Graphene Transistors with n-type doped SiC Source/Drain Regions","Graphene Week 2013, GW2013-142",,,,,,2013,June
"Yuichi Nagahisa,Eisuke Tokumitsu","Suppression of Hole Current in Graphene Transistors with n-type Doped SiC Source/Drain Regions",,"Materials Science Forum",,"Vol. 717-720",,"pp. 679-682",2012,May
"永久雄一,徳光永輔","ＳｉＣ上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み","SiC及び関連ワイドギャップ半導体研究会第２０回講演会",,,,,,2011,Dec.
"Yuichi Nagahisa,Eisuke Tokumitsu","Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions","2011 International Conference on Silicon Carbide and Related Materials （ICSCRM 2011）",,,,,"pp. 112",2011,Sept.
"永久雄一,徳光永輔","n型ドープしたSiCをソース/ドレインに用いたグラフェンチャネルトランジスタの作製とその評価","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"Y. Nagahisa,E. Tokumitsu","FABRICATION OF GRAPHEN CHANNEL TRANSISTOR WITH HEAVILY DOPED SiC SOURCE/DRAIN REGIONS","2011 International Symposium on Graphene Devices (ISGD)",,,,,,2010,Oct.