""Yusuke Takei","Masayuki Kamiya","Kazuo Tsutsui","Wataru Saito","Kuniyuki Kakushima","Hitoshi Wakabayashi","Yoshinori Kataoka","Hiroshi Iwai"","Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers",,"Physica Status Solidi A",,"Vol. 212","No. 5","pp. 1104-1109",2015,Feb.
"Kazuo Tsutsui,Masayuki Kamiya,Yusuke Takei,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Yoshinori Kataoka,Hiroshi Iwai","Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers","The International Workshop on Nitride Semiconductors (IWN2014)",,,,,,2014,Aug.
"M. Kamiya,Y. Takei,W. Saito,K. Kakushima,H. Wakabayashi,Y. Kataoka,K. Tsutsui,H. Iwai","Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Masayuki Kamiya,Yusuke Takei,齋藤渉,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,HIROSHI IWAI","Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Yusuke Takei,Mari Okamoto,S. Man,Ryosuke Kayanuma,Masayuki Kamiya,齋藤渉,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,HIROSHI IWAI","Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures","The Workshop on Future Trend of Nanoelectronics:WIMNACT",,,,,,2014,
"武井優典,岡本真里,マンシン,萱沼怜,神谷真行,齋藤渉,筒井一生,角嶋邦之,若林整,片岡好則,岩井洋","AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"神谷真行,武井優典,齋藤渉,角嶋邦之,若林整,片岡好則,筒井一生,岩井洋","AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性","第61回応用物理学会春季学術講演会",,,,,,2014,
"J. T. Song,H. Mashiko,M. Kamiya,Y. Nakamine,A. Ohtomo,T. Iwasaki,M. Hatano","Improved visible light driven photoelectrochemical properties of 3C-SiC semiconductor with Pt nanoparticles for hydrogen generation",,"Applied Physics Letters","The American Institute of Physics","Volume 103",,"  213901 (5 pages)",2013,Nov.
"武井優典,神谷真行,寺山一真,米澤宏昭,齋藤 渉,筒井一生,角嶋邦之,若林整,片岡好則,岩井洋","AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"神谷真行,寺山一真,武井優典,齋藤 渉,角嶋邦之,若林整,片岡好則,筒井一生,岩井洋","AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"神谷真行,岩崎孝之,波多野睦子","3C-SiC半導体による水の光電気分解","第59回応用物理学関係連合講演会",,,,,,2012,Mar.