"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs",,"Jpn. J. Appl. Phys.",,,,"  59, SGGA06 (2020)",2020,Feb.
"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for double gate hetero tunnel FETs","2019 International Conference on Solid State Devices and Materials(SSDM 2019)",,,,,"  PS-1-21(LN),",2019,Sept.
"國貞 彰吾,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い","第65回応用物理学会春季学術講演会",,,,,"  18a-G203-7",2018,Mar.
"國貞 彰吾,福田 浩一,宮本 恭幸","[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"Shouhei Moriwaki,Minoru Saito,Syougo Kunisada,Tomoyuki Miyamoto","Characterization of ion implantation quantum well intermixing for carrier confinement of VCSEL","20th Microoptics Conference (MOC'15)",,,,,,2015,Oct.
"森脇翔平,齋藤季,國貞彰吾,宮本智之","VCSELのキャリア閉じ込め応用に向けたイオン注入混晶化法の評価","第76回応用物理学会学術講演会",,,,,,2015,Sept.