"Naoaki Takebe,Y. Miyamoto","Reduction of base-collector capacitance in InP/InGaAs DHBT with buried SiO2 wires",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 917-920",2012,May
"N. Takebe,Y. Miyamoto","Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"N. Takebe,T. Kobayashi,H. Suzuki,Y. Miyamoto,K. Furuya","Fabrication of InP/InGaAs DHBTs with buried SiO2 wires",,"IEICE Trans. Electron.","IEICE","vol. E94-C","no. 5","pp. 830-834",2011,May
"武部直明,宮本恭幸","InP/InGaAs DHBT におけるSiO2細線埋め込みによるベースコレクタ間容量の削減","第58回応用物理学会関係連合講演会",,,,,,2011,Apr.
"小林 嵩,鈴木裕之,武部直明,宮本恭幸,古屋一仁","SiO2細線埋め込みInP/InGaAs DHBTの作製","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"武部直明,山下浩明,高橋新之助,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"YASUYUKI MIYAMOTO,Hiroaki Yamashita,Naoaki Takebe,KAZUHITO FURUYA","In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire","Topical Workshop on Heterostructure Materials (TWHM2009)",,,,,,2009,Aug.
"武部直明,山下浩明,高橋新之助,齋藤尚史,小林 嵩,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング","電子情報通信学会電子デバイス研究会",,,,,,2009,June