"W Zhang,T. Kanazawa,Y. Miyamoto","Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment",,"Apl. Phys. Exp",,"vol. 12","no. 6","  065005 (2019)",2019,May
"’£ •¶—Ï,‹ààV “O,–k‘º –«,‹{–{ ‹±�K","UV-O3•\–ÊŽ_‰»‚É‚æ‚éHfS2 MOSFET‚Ì�«”\‰ü‘P","‘æ66‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,"  11p-W521-4",2019,Mar.
"W Zhang,S. Netsu,T. Kanazawa,T. Amemiya,Y. Miyamoto","Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor",,"Jpn. J. Appl. Phys",,"  58, SBBH02 (2019)",,,2019,Jan.
"’£ •¶—Ï,”I’à �½�W,‹ààV “O,‰J‹{ ’q�G,‹{–{ ‹±�K","–„‚ß�ž‚ÝNiƒoƒbƒNƒQ�[ƒg‚ð—p‚¢‚½p-MoS2/HfS2ƒgƒ“ƒlƒ‹FET","‘æ79‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,"  19a-212B-5",2018,Sept.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  M-7-03",2018,Sept.