"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs",,"Jpn. J. Appl. Phys.",,,,"  59, SGGA06 (2020)",2020,Feb.
"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for double gate hetero tunnel FETs","2019 International Conference on Solid State Devices and Materials(SSDM 2019)",,,,,"  PS-1-21(LN),",2019,Sept.
"–ì�ã ’¼�Æ,•Ÿ“c �_ˆê,‹{–{ ‹±�K","—ÊŽqŒø‰Ê‚̉e‹¿‚ð�l—¶‚µ‚½GaAsSb/InGaAs Double-Gate Tunnel FET‚ÌŒŸ“¢","‘æ66‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,"  9p-S221-4",2019,Mar.