"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Experimental approach for feasibility of superlattice FETs","2016 Lester Eastman Conference (LEC)",,,,,"pp. 8-11",2016,Aug.
"行待 篤志,柏野 壮志,宮本 恭幸","超格子FETに向けたダブルバリアp-i-n接合ダイオード","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"宮本恭幸,金澤 徹,米内義晴,加藤 淳,藤松基彦,柏野壮志,大澤一斗,大橋一水","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"柏野壮志,行待篤志,宮本恭幸","急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ト?レイン層及ひ?狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化","電子情報通信学会技術研究報告",,,,,,2012,May
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.