"KAZUO TSUTSUI,Norifumi Hoshino,Yasumasa Nakagawa,Masaoki Tanaka,Hiroshi Nohira,Kuniyuki KAKUSHIMA,Ahmet Parhat,佐々木雄一朗,Bunji Mizuno,takeo hattori,HIROSHI IWAI","Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions","IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology",,,,,,2010,May
"A. Uedono,KAZUO TSUTSUI,S. Ishibashi,H. Watanabe,S. Kubota,Yasumasa Nakagawa,Bunji Mizuno,takeo hattori,HIROSHI IWAI","Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam",,"Japanese Journal of Applied Physics",,"  49",,"  051301",2010,May
"Akira Uedono,KAZUO TSUTSUI,Shoji Ishibashi,Hiromichi Watanabe,Shoji Kubota,Kazuki Tenjinbayashi,Yasumasa Nakagawa,Bunji Mizuno,takeo hattori,HIROSHI IWAI","Vacancy-Type Defects in Ultra-Shallow Junctions Fabricated Using Plasma Doping Studied by Positron Annihilation","IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology",,,,,,2010,May
"星野憲文,中川恭成,野平博司,室 隆桂之,加藤 有香子,甲斐隆行,金成国,パールハットアヘメト,角嶋邦之,水野文二,木下 豊彦,筒井一生,服部健雄,岩井洋","光電子分光によるSi中Asの化学結合状態評価","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 883",2009,Mar.
"K. Tsutsui,M. Watanabe,Y. Nakagawa,T. Matsuda,Y. Yoshida,E. Ikenaga,K. Kakushima,P. Ahmet,H. Nohira,T. Maruizumi,A. Ogura,T. Hattori,H. Iwai","New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"酒井一憲,中川恭成,横田知之,金成国,岡下勝己,佐々木雄一朗,パールハットアヘメト,角嶋邦之,水野文二,服部健雄,筒井一生,岩井洋","3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 749",2008,Sept.
"中川恭成,野平博司,酒井一憲,横田 知之,甲斐 隆行,金成国,パールハットアヘメト,角嶋邦之,水野文二,服部健雄,筒井一生,岩井洋","光電子分光によるSi中Asの活性化状態の深さ方向分布評価","秋季第69回応用物理学会学術講演会","応用物理学会","応用物理学会",,"No. 2","pp. 738",2008,Sept.
"Kazuo Tsutsui,Masamitsu Watanabe,Yasumasa Nakagawa,Kazunori Sakai,Takayuki Kai,Cheng-Guo Jin,Yuichiro Sasaki,Kuniyuki Kakushima,Parhat Ahmet,Bunji Mizuno,Takeo Hattori,Hiroshi Iwai.","Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique","The 8th International Workshop on Junction Technology (IWJT2008)",,,,,,2008,May
"酒井一憲,渡邉将光,中川恭成,金 成国,岡下 勝己,佐々木雄一朗,パールハットアヘメト,角嶋邦之,水野 文二,服部健雄,筒井一生,岩井洋","極浅接合プロファイリングのための反復犠牲酸化エッチング技術","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 900",2008,Mar.