"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of rare earth silicates for highly scaled gate dielectrics",,"Microelectronic Engineering",,"Vol. 87","No. 10","pp. 1868-1871",2010,Oct.
"角嶋邦之,小柳友常,来山大祐,幸田みゆき,宋在烈,佐藤創志,川那子高暢,M. マイマイティ,舘喜一,M.K. Bera,パールハットアヘメト,野平博司,筒井一生,西山彰,杉井信之,名取研二,服部健雄,山田啓作,岩井洋","LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御","応用物理学会分科会 シリコンテクノロジー","，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）",,,"No. 127","pp. 4-8",2010,July
"Kuniyuki KAKUSHIMA,Tomotsune Koyanagi,来山大祐,Miyuki Kouda,Jaeyeol Song,Takamasa Kawanago,M. Mamatrishat,Kiichi Tachi,M. K. Bera,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,Keisaku Yamada,HIROSHI IWAI","Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability","2010 Symposium on VLSI Technology",,,,,,2010,June
"Kuniyuki KAKUSHIMA,Kiichi Tachi,M.Adachi,Koichi Okamoto,Soshi Sato,Jaeyeol Song,Takamasa Kawanago,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Interface and electrical properties of La-silicate for direct contact of high-k with silicon",,"Solid-State Electronics",,"Vol. 54",,"pp. 715-719",2010,June
"M.K.Bera,Jaeyeol Song,Ahmet Parhat,Kuniyuki KAKUSHIMA,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices",,"SEMICONDUCTOR SCIENCE AND TECHNOLOGY",,"Vol. 25","No. 6","  065008",2010,May
"M.K. Bera,Jaeyeol Song,Ahmet Parhat,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices",,"SEMICONDUCTOR SCIENCE AND TECHNOLOGY",,"Vol. 25","No. 6","  065008",2010,May
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","SrO capping effect for La2O3/ Ce-Silicate gate dielectrics",,"Microelectronics Reliability 50",,,,"pp. 356-359",2010,Mar.
"Kuniyuki KAKUSHIMA,Tomotsune Koyanagi,Kiichi Tachi,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric",,"Solid-State Electronics",,"Vol. 54",,"pp. 720-723",2010,
"M.K. Bera,Jaeyeol Song,Ahmet Parhat,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Jaeyeol Song,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"M.K.Bera,Jaeyeol Song,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge","ECS 216th Meeting",,,"vol. 25","No. 6","pp. 67-77",2009,Oct.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Kiichi Tachi,Miyuki Kouda,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm","ESSDERC 2009, 39th European Solid-State Device Research Conference",,,,,"p. 403",2009,Sept.
"Takamasa Kawanago,Jaeyeol Song,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET","INFOS2009, Microelectronic Engineering","INFOS2009",,"Vol. 86",,"pp. 1629-1631",2009,June
"Jaeyeol Song,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Post metallization annealing study in La2O3/Ge MOS structure","INFOS2009, Microelectronic Engineering","INFOS2009",,"Vol. 86",,"pp. 1638-1641",2009,June
"宋在烈,舘喜一,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 840",2009,Mar.
"Kuniyuki KAKUSHIMA,Kiichi Tachi,Jaeyeol Song,Soshi Sato,Hiroshi Nohira,E. Ikenaga,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film",,"JOURNAL OF APPLIED PHYSICS","[ 145]	K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui,   N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009","Vol. 106",,,2009,
"宋在烈,舘喜一,岡本晃一,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 849",2008,Mar.
"Kuniyuki Kakushima,Kouichi Okamoto,Manabu Adachi,Kiichi Tachi,Jaeyeol Song,Soushi Sato,Takamasa Kawanago,Parhat Ahmet,Kazuo Tsutsui,Nobuyuki Sugii,Takeo Hattori,Hiroshi Iwai","Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS","Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007)",,,,,,2007,Nov.
"宋在烈,角嶋邦之,パールハット・アヘメト,筒井一生,杉井信之,服部健雄,岩井洋","La2O3/Ge MIS 構造における微量Si 界面層導入による電気特性の変化",,"秋季第68回応用物理学会学術講演会",,,,,2007,Sept.
"佐藤創志,舘喜一,宋在烈,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","ラジカル窒化によるLa<sub>2O</sub>3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）",,"電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス","電子情報通信学会","Vol. 107","No. 85","pp. 71-74",2007,May
"Takamasa Kawanago,Kiichi Tachi,Jaeyeol Song,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application",,"Microelectronic Engineering",,"Vol. 84",,"pp. 2335-2338",2007,
"Jaeyeol Song,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Improvement of interfacial properties with interfacial layer in La2O3  / Ge structure",,"Microelectronic Engineering",,"Vol. 84",,"pp. 2336-2339",2007,
"H. Nohira,T. Matsuda,K. Tachi,Y. Shiino,J. Song,Y. Kuroki,J. Ng,P. Ahmet,K. Kakushima,K. Tsutsui,E. Ikenaga,K. Kobayashi,H. Iwai,T. Hattori","Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer","2006 Joint International Meeting of ECS",,,,,,2006,Oct.