"Tomoyuki Miyamoto,Ryoichiro Suzuki,Tomoyuki Sengoku","Multilayer InAs quantum dot with a thin spacer layer partly inserted GaNAs strain compensation layer",,"Jpn. J. Appl. Phys.",,"vol. 50","no. 3",,2011,Mar.
"根本幸祐,鈴木亮一郎,仙石知行,田辺悟,西尾礼,小山二三夫,宮本智之","MOCVD 成長GaInNAs バッファ上InAs/GaAs 量子ドットの水素パッシベート効果","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"田辺悟,鈴木亮一郎,仙石知行,根本幸祐,西尾礼,宮本智之","MOCVD成長によるSi上GaPの表面モフォロジーの成長条件依存性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"根本幸祐,鈴木亮一郎,仙石知行,田辺悟,西尾礼,小山二三夫,宮本智之","MOCVD法によるGaInNAsバッファ層上InAs量子ドットの熱アニール特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Kosuke Nemoto,Satoru Tanabe,Rei Nishio,Fumio Koyama","InAs quantum dots on GaInNAs buffer layer","36th International Symposium on Compound Semiconductors",,,,,"pp. 133-134",2009,Aug.
"根本 幸祐,鈴木 亮一郎,仙石 知行,田辺 悟,小山 二三夫,宮本 智之","InAs quantum dots on GaInNAs buffer layer","第28回電子材料シンポジウム",,,,,,2009,July
"田辺 悟,鈴木 亮一郎,仙石 知行,根本 幸祐,宮本 智之","Characterization of InAs QDs on a thin GaPN buffer layer by MOCVD","第28回電子材料シンポジウム",,,,,,2009,July
"Tomoyuki Sengoku,Ryoichiro Suzuki,Kosuke Nemoto,Satoru Tanabe,Fumio Koyama,Tomoyuki Miyamoto","Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 48","no. 7R","pp. 070203-1-3",2009,July
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Kosuke Nemoto,Satouru Tanabe,Fumio Koyama","Photoluminescence Characteristics of MOCVD Grown-InAs Quantum Dots Covered by GaInP Laye","2009 International Conference on Indium Phosphide and Related Materials, IPRM2009",,,"  WB1-7",,"pp. 234-237",2009,May
"Satoru Tanabe,Ryoichiro Suzuki,Tomoyuki Sengoku,Kosuke Nemoto,Tomoyuki Miyamoto","InAs QDs on thin GaP<small><sub>1-x</sub></small>N<small><sub>x</sub></small> buffer on GaP by MOCVD","2009 International Conference on Indium Phosphide and Related Materials (IPRM2009)",,,,,,2009,May
"田辺 悟,鈴木亮一郎,仙石知行,根本幸祐,小山二三夫,宮本智之","GaPNバッファ層を用いたGaP基板上InAs 量子ドット成長","第56回応用物理学関連連合講演会",,,,,,2009,Mar.
"仙石知行,宮本智之,鈴木亮一郎,根本幸祐,田辺 悟,小山二三夫","MOCVD法によるGaInNAsバッファ層上InAs量子ドットの高密度化","第56回応用物理学関連連合講演会",,,,,,2009,Mar.
"仙石知行,鈴木亮一郎,根本幸祐,田辺悟,小山二三夫,宮本智之","GaInPカバー層を用いたInAs量子ドットの発光特性","第69回応用物理学会学術講演会",,,,,,2008,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","High-density InAs quantum dots on GaNAs buffer layer",,"J. Crystal Growth",,"vol. 310",,"pp. 5085-5088",2008,Aug.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","High density InAs quantum dots on GaNAs buffer layer","27th Electronic Materials Symposium (EMS-27)",,,,,,2008,July
"仙石 知行,宮本 智之,鈴木 亮一郎,小山 二三夫","Multistacking of 1.4&micro;m range InAs quantum dots using GaNAs stress compensation layer","第27回電子材料シンポジウム",,,,,,2008,July
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","High density InAs quantum dots on GaNAs buffer layer","14th International Conference of Metalorganic Vapor Phase Epitaxy, IC-MOVPE XIV",,,,,,2008,June
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","Multilayer 1.4μm InAs Quantum dots with thin spacer using GaNAs strain compensation layer","20th Indium Phosphide and Related Materials Conference, IPRM2008",,,,,,2008,May
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer",,"Appl. Phys. Lett.",,"vol. 92","no. 14",,2008,Apr.
"鈴木亮一郎,宮本智之,仙石知行,小山二三夫","MOCVD法によるGaNAsバッファ層上InAs量子ドットの高密度化","第55回応用物理学関連連合講演会",,,,,,2008,Mar.