"Toshihiro Furukawa,Fumiya Hoshino,Yoshitaka Kobayashi,Tomoyuki Miyamoto","Growth and photoluminescence characteristics of GaNAsP/GaP 3QW on GaP substrate","The 40th International Symposium on Compound Semiconductors (ISCS2013)",,,,,,2013,May
"古川聖紘,星野文哉,小林由貴,宮本智之","MOCVD 法によるGaP 基板上GaNAsP/GaP 3 重量子井戸の室温発光特性","第60回応用物理学関係連合講演会",,,,,,2013,Mar.
"Tomoyuki Miyamoto,Satoru Tanabe,Rei Nishio,Yoshitaka Kobayashi,Ryoichiro Suzuki","InAs quantum dot growth on a thin GaNP buffer layer on GaP by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 51","no. 8",,2012,Aug.
"小林由貴,古川聖紘,田辺 悟,西尾 礼,宮本智之","MOCVD法によるGaP基板上GaNAsP/Ga(N)P3重量子井戸の成長特性と発光評価","第71回応用物理学会学術講演会",,,,,,2011,Aug.
"西尾礼,田辺悟,小林由貫,宮本智之","MOCVD法によるGaP基板上GaNAsP/GaP量子井戸の成長と発光特性","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"田辺悟,西尾礼,小林由貴,宮本智之","GaP基板上へのGaInPバッファ上GaInAs量子ドット成長","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"小林由貴,田辺悟,西尾礼,宮本智之","MOCVD法によるGaP基板上GaAsP 3重量子井戸の成長特性と発光評価","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"田辺悟,西尾礼,小林由貴,根本幸祐,宮本智之","Si基板上へのGaNP層及びInAs系量子ドット成長の検討","電子情報通信学会レーザ・量子エレクトロニクス研究会(LQE)",,,,,,2010,Nov.
"Y. Kobayashi,A. B. Sachid,K. Tsutsui,K. Kakushima,P. Ahmet,V. R. Rao,H. Iwai","Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"Y. Kobayashi,K. Tsutsui,K. Kakushima,P. Ahmet,V. R. Rao,H. Iwai","Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects","Int. Conf. on Solid State Devices and Materials (SSDM2008)",,,,,,2008,Sept.
"Y. Kobayashi,K. Tsutsui,K. Kakushima,V. Hariharan,V. R. Rao,P. Ahmet,H. Iwai","Parasitic Effects Depending on Shape of Spacer Region on FinFETs","211th ECS Meeting",,,,,,2007,May
"H. Nohira,T. Matsuda,K. Tachi,Y. Shiino,J. Song,Y. Kuroki,J. Ng,P. Ahmet,K. Kakushima,K. Tsutsui,E. Ikenaga,K. Kobayashi,H. Iwai,T. Hattori","Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer","2006 Joint International Meeting of ECS",,,,,,2006,Oct.