"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,,"  P2-32",2018,June
"Nobukazu Kise,Haruki Kinoshita,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain",,"Solid-State Electronics",,"Vol. 126",,"pp. 92-95",2016,Sept.
"Haruki Kinoshita,Nobukazu Kise,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","Compound Semiconductor Week (CSW2016)",,,,"  TuD4-2",,2016,June
"木下 治紀,木瀬 信和,祢津 誠晃,金澤 徹,宮本 恭幸","再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,"  22p-W541-5",,2016,Mar.
"木下 治紀,木瀬 信和,祢津 誠晃,金澤 徹,宮本 恭幸","[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"木下 治紀,金澤 徹,祢津 誠晃,三嶋 裕一,宮本 恭幸","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-9",2015,Sept.
"H.Kinoshita,S.Netsu,Y.mishima,T.Kanazawa,Y.Miyamoto","Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain","11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)",,,,,,2015,Aug.
"木下 治紀,金澤 徹,祢津 誠晃,三嶋 裕一,宮本 恭幸","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"三嶋裕一,金澤徹,木下治紀,上原英治,宮本恭幸","再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET","第61回春季応用 物理学会学術講演会",,,,,,2014,Mar.
"金澤徹,三嶋裕一,木下治紀,上原英治,宮本恭幸","MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET","電子情報通信学 会 電子デバイス研究会","IEICE technical report",,,,,2014,Jan.