"Hiroyuki Yamada,Shiro Hino,Naruhisa Miura,Masayuki Imaizumi,Satoshi Yamakawa,EISUKE TOKUMITSU","Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer","The International Conference on Silicon Carbide and Related Materials 2013",,,,,,2013,Oct.
"Eisuke Tokumitsu,Akio Ishiguro,Hiroyuki Yamada,Shiro Hino,Naruhisa Miura,Masayuki Imaizumi,Hiroaki Sumitani,Tatsuo Oomori","Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process","2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011)",,,,,"pp. 320",2011,Sept.
"ŽR“c‘Χ”V,Ξ•‹Ε•v,“ϊ–μŽj˜Y,ŽO‰Y ¬‹v,‘ςΉ”V,Šέ’J”ŽΊ,“ΏŒυ‰i•γ","Al2O3‘͐ϖŒ‚πƒQ[ƒgβ‰–Œ‚Ι—p‚’‚½SiC-MOSFET‚̍쐻‚Ζ•]‰Ώ","‰ž—p•¨—Šw‰οƒVƒŠƒRƒ“ƒeƒNƒmƒƒW[•ͺ‰Θ‰ο‘ζ‚P37‰ρŒ€‹†W‰οA“dŽqξ•ρ’ʐMŠw‰οƒVƒŠƒRƒ“ή—ΏƒfƒoƒCƒXŒ€‹†‰ο","MŠw‹Z•ρ",,,,"pp. 11-15",2011,July