"Shoichi Yoshitomi,Kentarou Yamanaka,Yusei Goto,Yuta Yokomura,Nobuhiko Nishiyama,Shigehisa Arai","Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C",,"Japanese Journal of Applied Physics","Japanese Applied Physics Society","Vol. 59","Number 4","p. 042003",2020,Apr.
"Shoichi Yoshitomi,Kentarou Yamanaka,Yusei Goto,Nobuhiko Nishiyama,SHIGEHISA ARAI","Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser","Photonic Device Workshop",,"電子情報通信学会",,,,2018,Dec.
"Yusei Goto,Shoichi Yoshitomi,Kentarou Yamanaka,Nobuhiko Nishiyama,SHIGEHISA ARAI","Optical-Response Analysis of Voltage-Modulated 1.3 μm Wavelength AlGaInAs/InP Transistor Laser",,,,,,,2018,Oct.
"後藤優征,吉冨翔一,山中健太郎,西山伸彦,荒井滋久","キャリア変動による利得特性変化を考慮した電圧変調 1.3 μm帯npn-AlGaInAs/InP トランジスタレーザの大信号解析",,,,,,,2018,Sept.
"Shoichi Yoshitomi,Kentarou Yamanaka,Yusei Goto,Nobuhiko Nishiyama,SHIGEHISA ARAI","90 ℃ CW operation of  1.3-?m wavelength npn-AlGaInAs/InP transistor lasers by thick and wide base-electrode","26th International Semiconductor Laser Conference (ISLC 2018)",,,,"No. MC2",,2018,Sept.
"吉冨翔一,山中健太郎,後藤優征,西山伸彦,荒井滋久","1.3 ?m帯npn-AlGaInAs/InP トランジスタレーザの高温連続動作","2018年電子情報通信学会ソサイエティ大会",,,,,,2018,Sept.
"吉冨翔一,山中健太郎,後藤優征,藤本直,西山伸彦,荒井滋久","GRIN-SCH構造を有する1.3 ?m帯npn-AlGaInAs/InP トランジスタレーザの静特性","電子情報通信学会 2018年総合大会",,,,,,2018,Mar.
"後藤優征,山中健太郎,吉冨翔一,西山伸彦,荒井滋久","1.3-?m帯npn-AlGaInAs/InP トランジスタレーザにおける 電気的応答を考慮した大信号特性の解析","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"吉冨翔一,只野翔太郎,山中健太郎,西山伸彦,荒井滋久","1.3 ?m帯トランジスタレーザにおける電流増幅率と 温度安定性の向上","電子情報通信学会 光エレクトロニクス（OPE）研究会 2018年度1月研究会",,,,,,2018,Jan.
"Shoichi Yoshitomi,Shotaro Tadano,Kentaro Yamanaka,Nobuhiko Nishiyama,Shigehisa Arai","Lasing characteristics of 1.3-?m npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate",,"Japanese Journal of Applied Physics",,"Volume 57","Number 1","p. 012102",2017,Dec.
"Kentarou Yamanaka,Shotaro Tadano,Shoichi Yoshitomi,Nobuhiko Nishiyama,SHIGEHISA ARAI","Base Layer Design for Voltage Modulation in 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers","The 24th Cogress of the International Commission for Optics(ICO-24)",,,"  M1J-06",,,2017,Aug.
"Shoichi Yoshitomi,Shotaro Tadano,Kentarou Yamanaka,Nobuhiko Nishiyama,SHIGEHISA ARAI","Thermal Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Au Plating","The 24th Congress of the International Commission for Optics",,,,"  Th1J-07",,2017,Aug.
"Shoichi Yoshitomi,Shotaro Tadano,Kentarou Yamanaka,Nobuhiko Nishiyama,SHIGEHISA ARAI","Lasing Characteristics of  1.3-?m npn-AlGaInAs/InP Transistor Laser with Reduced Base Bandgap Structure","The 12th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2017)",,,,"No. 1-3G-5",,2017,July
"Kentarou Yamanaka,Shotaro Tadano,Shoichi Yoshitomi,Nobuhiko Nishiyama,SHIGEHISA ARAI","Effect of GaInAsP Absorption Layer Composition on Voltage Modulation in 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers","The 29th International Conference on Indium Phosphide and Related Materials (IPRM)",,,"  C2-2",,,2017,May
"吉冨翔一,只野翔太郎,山中健太郎,西山伸彦,荒井滋久","p-GaInAsPベース層バンドギャップ低減による1.3-μm帯npn-AlGaInAs/InPトランジスタレーザの電流増幅率の向上","第64回応用物理学会春季学術講演会",,,,"No. 15p-422-14",,2017,Mar.
"山中健太郎,只野翔太郎,吉冨翔一,西山伸彦,荒井滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザの電圧変調動作に向けたGaInAsP吸収層組成の検討","電子情報通信学会 2017年総合大会",,,,"No. C4-8",,2017,Mar.
"吉冨翔一,只野翔太郎,山中健太郎,西山伸彦,荒井滋久","1.3-μm帯npn-AlGaInAs/InPトランジスタレーザにおける高速電圧変調動作に向けた電気的応答特性の解析","第78回応用物理学会秋季学術講演会",,,,"No. 6p-C14-16",,2017,Mar.
"吉冨翔一,只野翔太郎,山中健太郎,西山伸彦,荒井滋久","1.3-μm帯npn-AlGaInAs/InPトランジスタレーザにおける熱特性の向上","電子情報通信学会 光エレクトロニクス（OPE）研究会 2017年度4月研究会",,,,,,2017,