"久島康嘉,河合宏之,村尾俊幸,河合康典,岸谷都,鈴木亮一,藤田政之","片麻痺患者のリハビリテーションに向けたFESによるペダリング運動の速度制御",,"電気学会論文誌 C",,"Vol. 138","No. 11","pp. 1391-1398",2018,July
"久島康嘉,河合宏之,村尾俊幸,河合康典,岸谷都,鈴木亮一,藤田政之","FES-assisted Cycling with Cadence Tracking Control for Rehabilitation of Hemiparesis",,"電気学会論文誌 C",,"Vol. 138","No. 11","pp. 1391-1398",2018,July
"Tomoyuki Miyamoto,Satoru Tanabe,Rei Nishio,Yoshitaka Kobayashi,Ryoichiro Suzuki","InAs quantum dot growth on a thin GaNP buffer layer on GaP by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 51","no. 8",,2012,Aug.
"Tomoyuki Miyamoto,Ryoichiro Suzuki,Tomoyuki Sengoku","Multilayer InAs quantum dot with a thin spacer layer partly inserted GaNAs strain compensation layer",,"Jpn. J. Appl. Phys.",,"vol. 50","no. 3",,2011,Mar.
"Tomoyuki Miyamoto,Ryoichiro Suzuki","Post-thermal annealing effects on photoluminescence properties of InAs quantum dots on GaNAs buffer layer",,"Jpn. J. Appl. Phys.",,"vol. 50","no. 3",,2011,Mar.
"根本幸祐,鈴木亮一郎,仙石知行,田辺悟,西尾礼,小山二三夫,宮本智之","MOCVD 成長GaInNAs バッファ上InAs/GaAs 量子ドットの水素パッシベート効果","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"西尾礼,田辺悟,根本幸祐,鈴木亮一郎,宮本智之","MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善","第29回電子材料シンポジウム",,,,,,2010,July
"田辺 悟,西尾礼,鈴木亮一郎,根本幸祐,宮本智之","MOCVD 法によるSi 基板上及びGaP 基板上InAs 量子ドットの成長特性","第29回電子材料シンポジウム (EMS-29)",,,,,,2010,July
"Satoru Tanabe,Ryoichiro Suzuki,Kosuke Nemoto,Rei Nishio,Tomoyuki Miyamoto","InAs QDs grown on GaP buffer layer on Si substrate","The 37th International Symposium on Compound Semiconductors",,,,,,2010,May
"Rei Nishio,Satoru Tanabe,Ryoichiro Suzuki,Kosuke Nemoto,Tomoyuki Miyamoto","Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD","2010 International Conference on Indium Phosphide and Related Materials",,,,,,2010,May
"西尾礼,田辺悟,根本幸祐,鈴木亮一郎,宮本智之","MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善","第57回応用物理学関連連合講演会",,,,,,2010,Mar.
"田辺悟,鈴木亮一郎,根本幸祐,西尾礼,宮本智之","Si基板上GaP上へのInAs量子ドット成長","第57回応用物理学関連連合講演会",,,,,,2010,Mar.
"田辺悟,鈴木亮一郎,仙石知行,根本幸祐,西尾礼,宮本智之","MOCVD成長によるSi上GaPの表面モフォロジーの成長条件依存性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"根本幸祐,鈴木亮一郎,仙石知行,田辺悟,西尾礼,小山二三夫,宮本智之","MOCVD法によるGaInNAsバッファ層上InAs量子ドットの熱アニール特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Kosuke Nemoto,Satoru Tanabe,Rei Nishio,Fumio Koyama","InAs quantum dots on GaInNAs buffer layer","36th International Symposium on Compound Semiconductors",,,,,"pp. 133-134",2009,Aug.
"根本 幸祐,鈴木 亮一郎,仙石 知行,田辺 悟,小山 二三夫,宮本 智之","InAs quantum dots on GaInNAs buffer layer","第28回電子材料シンポジウム",,,,,,2009,July
"田辺 悟,鈴木 亮一郎,仙石 知行,根本 幸祐,宮本 智之","Characterization of InAs QDs on a thin GaPN buffer layer by MOCVD","第28回電子材料シンポジウム",,,,,,2009,July
"Tomoyuki Sengoku,Ryoichiro Suzuki,Kosuke Nemoto,Satoru Tanabe,Fumio Koyama,Tomoyuki Miyamoto","Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 48","no. 7R","pp. 070203-1-3",2009,July
"Satoru Tanabe,Ryoichiro Suzuki,Tomoyuki Sengoku,Kosuke Nemoto,Tomoyuki Miyamoto","InAs QDs on thin GaP<small><sub>1-x</sub></small>N<small><sub>x</sub></small> buffer on GaP by MOCVD","2009 International Conference on Indium Phosphide and Related Materials (IPRM2009)",,,,,,2009,May
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Kosuke Nemoto,Satouru Tanabe,Fumio Koyama","Photoluminescence Characteristics of MOCVD Grown-InAs Quantum Dots Covered by GaInP Laye","2009 International Conference on Indium Phosphide and Related Materials, IPRM2009",,,"  WB1-7",,"pp. 234-237",2009,May
"田辺 悟,鈴木亮一郎,仙石知行,根本幸祐,小山二三夫,宮本智之","GaPNバッファ層を用いたGaP基板上InAs 量子ドット成長","第56回応用物理学関連連合講演会",,,,,,2009,Mar.
"仙石知行,宮本智之,鈴木亮一郎,根本幸祐,田辺 悟,小山二三夫","MOCVD法によるGaInNAsバッファ層上InAs量子ドットの高密度化","第56回応用物理学関連連合講演会",,,,,,2009,Mar.
"仙石知行,鈴木亮一郎,根本幸祐,田辺悟,小山二三夫,宮本智之","GaInPカバー層を用いたInAs量子ドットの発光特性","第69回応用物理学会学術講演会",,,,,,2008,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","High-density InAs quantum dots on GaNAs buffer layer",,"J. Crystal Growth",,"vol. 310",,"pp. 5085-5088",2008,Aug.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","High density InAs quantum dots on GaNAs buffer layer","27th Electronic Materials Symposium (EMS-27)",,,,,,2008,July
"仙石 知行,宮本 智之,鈴木 亮一郎,小山 二三夫","Multistacking of 1.4&micro;m range InAs quantum dots using GaNAs stress compensation layer","第27回電子材料シンポジウム",,,,,,2008,July
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","High density InAs quantum dots on GaNAs buffer layer","14th International Conference of Metalorganic Vapor Phase Epitaxy, IC-MOVPE XIV",,,,,,2008,June
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","Multilayer 1.4μm InAs Quantum dots with thin spacer using GaNAs strain compensation layer","20th Indium Phosphide and Related Materials Conference, IPRM2008",,,,,,2008,May
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Fumio Koyama","Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer",,"Appl. Phys. Lett.",,"vol. 92","no. 14",,2008,Apr.
"鈴木亮一郎,宮本智之,仙石知行,小山二三夫","MOCVD法によるGaNAsバッファ層上InAs量子ドットの高密度化","第55回応用物理学関連連合講演会",,,,,,2008,Mar.
"鈴木亮一郎,宮本智之,小山二三夫","GaNAs歪補償層を用いた1.4μm帯短スペーサー層InAs量子ドットの多層化","第68回応用物理学会学術講演会",,,,,,2007,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Fumio Koyama","Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer","The 7th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2007",,,,,,2007,Aug.
"鈴木 亮一郎,宮本 智之,小山 二三夫","Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer","第26回電子材料シンポジウム",,,,,,2007,July
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Fumio Koyama","Post-annealing effects on emission characteristics of InAs quantum dots on GaNAs buffer layer",""International Conference on Indium Phosphide and Related Materials, IPRM2007"",,,,,,2007,May
"鈴木亮一郎,宮本智之,小山二三夫","GaNAs歪補償層を用いたInAs量子ドットのスペーサー層厚低減効果","第54回応用物理学関連連合講演会",,,,,,2007,Mar.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Fumio Koyama","Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer",,"J. Crystal Growth",,"vol. 298",,"pp. 574-577",2007,Jan.
"鈴木亮一郎,宮本智之,小山二三夫","GaNAsバッファ層を用いたInAs量子ドット発光の熱アニール効果","第67回応用物理学会学術講演会",,,,,,2006,Sept.
"宮本智之,松浦哲也,鈴木亮一郎",""N,Sbを添加したInAs系量子ドットの形成特性と光学特性"","第67回応用物理学会学術講演会",,,,,,2006,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tetsuya Matsuura,Fumio Koyama","Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 45","no. 23","pp. L585-L587",2006,June
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tetsuya Matsuura,Fumio Koyama","Wavelength elongation and improved emission efficiency of InAs quantum dots on GaNAs buffer layer",""13th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE-XIII"",,,,,,2006,May
"鈴木亮一郎,宮本智之,松浦哲也,小山二三夫","GaNAsバッファ層を有するInAs量子ドットの偏光依存性","第53回応用物理学関連連合講演会",,,,,,2006,Mar.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tetsuya Matsuura,Fumio Koyama","InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition",,"Physica Status Solidi",,"vol. 3(c)","no. 3","pp. 528-531",2006,Feb.
"鈴木亮一郎,宮本智之,松浦哲也,小山二三夫","GaNAsバッファ層上におけるInAs量子ドットの形成","第66回応用物理学会学術講演会",,,,,,2005,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,TETSUYA MATSUURA,FUMIO KOYAMA","InAs Quantum Dot formed on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition","32th International Symposium on Compound Semiconductors",,,,,,2005,Sept.