"K. Kakushima,K. Tachi,M. Adachi,K. Okamoto,S. Sato,J. Song,T. Kawanago,P. Ahmet,K. Tsutsui,N. Sugii,T. Hattori,H. Iwai","Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"K. Kakushima,K. Okamoto,M. Adachi,K. Tachi,S. Sato,T. Kawanago,J. Song,P. Ahmet,N. Sugii,K. Tsutsui,T. Hattori,H. Iwai","Impact of Thin La2O3 Insertion for HfO2 MOSFET","213th ECS Meeting",,,,,,2008,May
"足立学,岡本晃一,舘喜一,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 849",2008,Mar.
"岡本晃一,舘喜一,足立学,佐藤創志,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会 予稿集","応用物理学会",,"No. 2","pp. 848",2008,Mar.
"Kuniyuki Kakushima,Kouichi Okamoto,Manabu Adachi,Kiichi Tachi,Jaeyeol Song,Soushi Sato,Takamasa Kawanago,Parhat Ahmet,Kazuo Tsutsui,Nobuyuki Sugii,Takeo Hattori,Hiroshi Iwai","Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS","Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007)",,,,,,2007,Nov.
"M.Adachi,K.Okamoto,K.Kakushima,P.Ahmet,K.Tsutsui,N.Sugii,T.Hattori,H.Iwai","Control of Flat Band Voltage by Partial Incorporation of  La2O3  or Sc2O3 into MfO2  in Metal/MfO2/SiO2/Si MOS Capacitors",,"ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5","The Electrochemikal Society","Vol. 11","No. 4","pp. 157-167",2007,Oct.
"岡本晃一,足立学,角嶋邦之,パールハット・アヘメト,杉井信之,筒井一生,服部健雄,岩井洋","HfO2/Si 界面へのLa2O3 サブモノレイヤー添加による電気特性の変化","秋季第68回応用物理学会学術講演会","秋季第68回応用物理学会学術講演会予稿集",,,,"pp. 820",2007,Sept.
"上村 英之,足立 学,角嶋 邦之,パールハット アヘメト,筒井 一生,杉井 信之,服部 健雄,岩井 洋","HfO2/SiO2 界面へのSc2O3 添加によるフラットバンド電圧シフト","秋季第68回応用物理学会学術講演会","秋季第68回応用物理学会学術講演会予稿集",,,,"pp. 820",2007,Sept.
"[320]	Koichi Okamoto,Manabu Adachi,Kuniyuki Kakushima,Parhat Ahmet,Nobuyuki Sugii,Kazuo Tsutsui,Takeo Hattori,Hiroshi Iwai","Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation","ESSDERC 2007",,,,,,2007,Sept.