"宮本恭幸,金澤 徹,米内義晴,加藤 淳,藤松基彦,柏野壮志,大澤一斗,大橋一水","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,T. Irisawa,M. Oda,T. Tezuka","(Invited) Growth Process for High Performance of InGaAs MOSFETs","72nd Device Research Conference (DRC)",,,,,,2014,June
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,K. Ohsawa,M. Oda,T. Irisawa,T. Tezuka","Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density","44th IEEE Semiconductor Interface Specialists Conference (SICS 2013)",,,,,,2013,Dec.
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"加藤淳,米内義晴,金澤徹,宮本恭幸","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第 60 回応用物理学会春季学術講演会",,,,,,2013,Mar.
"加藤淳,米内義晴,金澤徹,宮本恭幸","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第73 回応用物理学会学術講演会",,,,,,2012,Sept.
"佐賀井健,米内義晴,宮本恭幸","InGaAs チャネル MOSFET の EOT 削減による 伝達コンタ?クタンス向上","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"Atsushi Kato,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,Yasuyuki Miyamoto","Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 904-919",2012,May
"宮本 恭幸,米内義晴,金澤徹","エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化","電気学会電子デバイス研究会",,,,,,2012,Mar.
"宮本恭幸,米内義晴,金澤徹","エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化","電気学会電子デバイス研究会",,,,,,2012,Mar.
"米内義晴,金澤徹,池田俊介,宮本恭幸","InPエッチング異方性による微細InGaAsチャネルMOSFET","応用物理学会 2012年度春季大会",,,,,,2012,Mar.
"宮本恭幸,米内義晴,金澤徹","InGaAs MOSFETの高電流密度化","電子情報通信学会技術研究報告",,,,,,2012,Jan.
"宮本恭幸,米内義晴,金澤徹","InGaAs MOSFETの高電流密度化","電子情報通信学会 電子デバイス研究会（ED）",,,,,,2011,Dec.
"A. Kato,T. Kanazawa,S. Ikeda,Y. Yonai,YASUYUKI MIYAMOTO","Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"R. Terao,T. Kanazawa,S. Ikeda,Y. Yonai,A. Kato,Y. Miyamoto","InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm",,"Applied Phys. Exp.","The Japan Society of Applied Physics","vol. 4","no. 5","  054201",2011,Apr.
"金澤 徹,寺尾 良輔,山口 裕太郎,池田 俊介,米内 義晴,加藤 淳,宮本 恭幸","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"Yosiharu Yonai,Toru Kanazawa,Shunsuke Ikeda,YASUYUKI MIYAMOTO","High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching","2011 IEEE International Electron Devices Meeting (IEDM 2011)",,,,,,2011,
"寺尾良輔,金澤徹,池田俊介,米内義晴,加藤淳,宮本恭幸","Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer","2010 International Conference on Solid State Devices and Materials",,,,,"pp. 129-130",2010,Sept.
"金澤徹,寺尾良輔,山口裕太郎,池田俊介,米内義晴,加藤淳,宮本恭幸","Si基板上貼付された裏面電極付InP/InGaAs MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.