"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ト?レイン層及ひ?狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化","電子情報通信学会技術研究報告",,,,,,2012,May
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.
"Jun Hirai,Tomoki Kususaki,Shunsuke Ikeda,YASUYUKI MIYAMOTO","Vertical InGaAs MOSFET with HfO2 gate","2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2012)",,,,,,2012,
"藤松基彦,齋藤尚史,楠崎智樹,松本 豊,平井 準,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究","第58回応用物理学会関係連合講演会",,,,,,2011,Mar.