"¡ˆä T–ç,Šì —º‰î,ì“ߎq ‚’¨,@“c ˆÉ—–ç,Šp“ˆ –M”V,’C–¤ “N–ç,•y’J –Η²,“›ˆä ˆê¶,Žá—Ñ ®","ƒXƒpƒbƒ^MoS2–Œ‚ɑ΂·‚éƒGƒbƒW‹à‘®ƒRƒ“ƒ^ƒNƒg‚Ì“d—¬“dˆ³“Á«","‘æ84‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï",,,,,,2023,Sept. "Ryosuke Kajikawa,Takamasa Kawanago,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs","International Conference on Solid State Devices and Materials",,,,,,2023,Sept. "Šì —º‰î,ì“ߎq ‚’¨,@“c ˆÉ—–ç,¯ˆä ‘ñ–ç,Šp“ˆ –M”V,“›ˆä ˆê¶,Žá—Ñ ®","ƒgƒbƒvƒQ[ƒg‚ÉŽ©ŒÈ®‡‚µ‚½WOx S/D‚ð—p‚¢‚½30-50 nm–ŒŒúWSe2ƒoƒbƒNƒ`ƒƒƒlƒ‹pFET","‘æ84‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï",,,,,,2023,Sept. "Takamasa Kawanago,Ryosuke Kajikawa,Kazuto Mizutani,Sung-Lin Tsai,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 11",,"p. 15-21",2022,Nov. "ì“ߎq ‚’¨,Šì —º‰î,…’J ˆêãÄ,Tsai Sung Lin,@“c ˆÉ—–ç,¯ˆä ‘ñ–ç,Šp“ˆ –M”V,“›ˆä ˆê¶,Žá—Ñ ®","ƒAƒ‹ƒ~ƒjƒEƒ€ƒXƒJƒ“ƒWƒEƒ€‡‹à(AlSc)‚ÆŽ_‰»ƒ^ƒ“ƒOƒXƒeƒ“(WOx)‚ðƒ\[ƒX/ƒhƒŒƒCƒ““d‹É‚É—p‚¢‚½WSe2 n/p FET‚ÆCMOSƒCƒ“ƒo[ƒ^‰ž—p","‘æ83‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï",,,,,,2022,Sept. "Takamasa KAWANAGO,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya HOSHII,Kuniyuki Kakushima,Kazuo TSUTSUI,Hitoshi WAKABAYASHI","Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb. "Takamasa Kawanago,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.