"M. Fujimatsu,H. Saito,Y. Miyamoto","71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure","24th Int. Conf. Indium Phosphide and Related Materials (IPRM2012)",,,,,,2012,Aug.
"Hisashi Saito,Y. Miyamoto","Reduction of Output Conductance in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region",,"Applied Phys. Exp.",,"vol. 5","no. 2","pp. 24101",2012,Mar.
"YASUYUKI MIYAMOTO,Hisashi Saito,Toru Kanazawa","High-current-density InP ultrafine devices for high-speed operation","The International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)",,,,,,2011,Oct.
"藤松基彦,齋藤尚史,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"藤松基彦,齋藤尚史,楠崎智樹,松本 豊,平井 準,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究","第58回応用物理学会関係連合講演会",,,,,,2011,Mar.
"松本 豊,齋藤尚史,宮本恭幸","縦型InGaAs MIS-FETのソース寄生容量の削減","電気学会電子デバイス研究会",,,,,,2011,Mar.
"H. Saito,Y. Matsumoto,Y. Miyamoto,K. Furuya","Vertical InGaAs Channel Metal?Insulator?Semiconductor Field Effect Transistor with High Current Density",,"Jpn. J. Appl. Phys.",,"vol. 50","no. 1"," 014102",2011,Jan.
"Motohiko Fujimatsu,Hisashi Saito,YASUYUKI MIYAMOTO","GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure","2011 International Conference on Solid State Devices and Materials(SSDM 2011)",,,,,,2011,
"Y. Miyamoto,H. Saito,T. Kanazawa","Submicron-channel InGaAs MISFET with epitaxially grown source","10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)",,,,,,2010,Nov.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9"," 094201",2010,Sept.
"H. Saito,Y. Miyamoto,K. Furuya","Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2",,"Applied Phys. Exp.",,"vol. 3","no. 8","p. 084101",2010,Aug.
"Y. Miyamoto,T. Kanazawa,H. Saito","InGaAs MISFET with epitaxially grown source","The 3rd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies","InGaAs MISFET with epitaxially grown source",,,,,2010,June
"H. Saito,Y. Miyamoto,K. Furuya","Vertical InGaAs FET with hetero-launcher and undoped channel","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"T. Kanazawa,K. Wakabayashi,H. Saito,R. Terao,T. Tajima,S. Ikeda,Y. Miyamoto,K. Furuya","Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"H. Saito,Y. Miyamoto,K. Furuya","Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET","Global COE International Symposium",,,,,,2010,Mar.
"若林和也,金澤 徹,齋藤尚史,寺尾良輔,池田俊介,宮本恭幸,古屋一仁","再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"寺尾良輔,金澤 徹,齋藤尚史,若林和也,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"齋藤尚史,楠崎智樹,松本 豊,宮本恭幸,古屋一仁","縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"金澤 徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","III-V族サブミクロンチャネルを有する高移動度MOSFET","電気学会電子デバイス研究会",,,,,,2010,Mar.
"金澤徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET","電子情報通信学会 電子デバイス研究会","電子情報通信学会技術研究報告 電子デバイス",,"Vol. 109","No. 360","pp. 39-42",2010,Jan.
"Toru Kanazawa,Hisashi Saito,Kazuya Wakabayashi,Ryousuke Terao,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region","2009 International Conference on Solid State Devices and Materials",,,,,"pp. 246-247",2009,Oct.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"H. Saito,Y. Miyamoto,K. Furuya","Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"若林和也,金澤 徹,齋藤尚史,田島智宣,寺尾良輔,宮本恭幸,古屋一仁","「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"齋藤尚史,楠崎智樹,松本 豊,宮本恭幸,古屋一仁","ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"若林 和也,金澤 徹,齋藤 尚史,田島 智宣,寺尾 良輔,宮本 恭幸,古屋 一仁","再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,"pp. 1299",2009,Sept.
"金澤徹,齋藤尚史,若林和也,田島智宣,宮本恭幸,古屋一仁","MOVPE再成長n+ソースを有する?-?族高移動度チャネルMOSFET","電気学会 電子・情報・システム部門大会",,,,,,2009,Sept.
"楠崎智樹,齋藤尚史,松本 豊,宮本恭幸,古屋一仁","縦型InGaAs-MISFETの試作","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"武部直明,山下浩明,高橋新之助,齋藤尚史,小林 嵩,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング","電子情報通信学会電子デバイス研究会",,,,,,2009,June
"YASUYUKI MIYAMOTO,Toru Kanazawa,Hisashi Saito,KAZUHITO FURUYA","InGaAs/InP MISFET with epitaxially grown source","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD）",,,,,,2009,June
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,,,2009,May
"H. Saito,Y. Miyamoto,K. Furuya","Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,," 311",2009,May
"齋藤尚史,金澤徹,宮本恭幸,古屋一仁","ヘ テロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製","電気学会電子デバイス研究会",,,,,,2009,Mar.
"齋藤尚史,楠崎智樹,松本豊,宮本恭幸,古屋一仁","ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET","第56回応用物理学会関係連合講演会",,,,," 1456",2009,Mar.
"Hisashi Saito,Yasuyuki Miyamoto,Kazuhito Furuya","Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain",,"Applied Physics Express","The Japan Society of Applied Physics","Vol. 2","No. 3"," 034501",2009,Mar.
"金澤徹,古屋一仁,宮本恭幸,齋藤尚史,若林和也,田島智宣","MOVPE再成長ソースを有するIII-V族MOSFETの電流特性","第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"宮本 恭幸,長谷川 貴史,齋藤 尚史,古屋 一仁","RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor","IEEE Nanotechnology Materials and Devices Conference 2008",,,,,,2008,Oct.
"T. Kanazawa,H. Saito,K. Wakabayashi,Y. Miyamoto,K. Furuya","Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"齋藤尚史,孟 伶我,宮本 恭幸,古屋 一仁","絶縁ゲート制御型ホットエレク トロントランジスタのゲート制御能力向上","第69回応用物理学会学術講演会",,,,," 1262",2008,Sept.
"金澤徹,古屋一仁,宮本恭幸,齋藤尚史,若林和也,田島智宣","?-?族高駆動能力MOSFETへ向けたn+-InGaAsソース/ドレイン層の横方向埋め込み成長","第69回応用物理学会学術講演会",,,,,,2008,Sept.
"H. Saito,Y. Miyamoto,K. FUruya","Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate","International Nano-Optoelectronic Workshop (iNOW 2008)","Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International",,,," 355",2008,Aug.
"Hisashi Saito,Takahiro Hino,Yasuyuki Miyamoto,Kazuhito Furuya","Hot electron transistor controlled by insulated gate with 70nm-wide emitter","IEEE 20th Conference on Indium Phosphide and Related Materials",,,,,,2008,May
"齋藤尚史,孟 伶我,宮本恭幸,古屋一仁","絶縁ゲート制御型ホットエレクト ロントランジスタの電圧利得向上","第55回応用物理学関係連合研究会",,,,," 1471",2008,Mar.