"K. Fushinobu,T. Hatakeyama","Electro-thermal scaling analysis of Si MOSFETs with device length typically larger than 100 nm",,"Transactions of The Japan Institute of Electronics Packaging",,"Vol. 4","No. 1","pp. 31-35",2012,Mar.
"T. Hatakeyama,M. Ishizuka,S. Nakagawa,K. Fushinobu","Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Design of Si Devices","ICEP2011","Proc. ICEP2011",,,,,2011,Apr.
"K. Fushinobu,T. Hatakeyama","Electro-thermal scaling analysis of Si MOSFETs with device length typically larger than 100 nm","ICEP2011","Proc. ICEP2011",,,,,2011,Apr.
"K. Fushinobu,T. Hatakeyama","Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm","SEMI-THERM 27","Proc. SEMI-THERM 27",,,,"pp. 175-180",2011,Mar.
"K. Fushinobu,Y. Yamamoto,T. Hatakeyama","Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm","ITherm 2010","Proc. ITherm 2010",,,"No. 008",,2010,June
"畠山友行,伏信一慶,石塚勝","Siナノトランジスタ熱管理のための熱・電気連成解析","日本機械学会第22回計算力学講演会","日本機械学会第22回計算力学講演会講演論文集",,,,"  1504",2009,Oct.
"Yasufumi Yamamoto,T. Hatakeyama,K. Fushinobu,K. Okazaki","Heat generation characteristics in Si MOSFETs for the device-level thermal management - Effect of the device scaling and transport properties","7th CHE Conference","Proc. 7th CHE Conference",,,,"  CHE2009-23",2009,Sept.
"Taisuke Miura,Tomoyuki Hatakeyama,KAZUYOSHI FUSHINOBU,Ken Okazaki","An investigation of effect of micro-structure on current collector for polymer electrolyte fuel cells",,"Thermal Science and Engineering","Heat Transfer Society of Japan","Vol. 17","No. 2","pp. 75-81",2009,July
"T. Hatakeyama,K. Fushinobu,K. Okazaki,M. Ishizuka","Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Issue in Si Devices","InterPACK 09","Proc. InterPACK 09",,,,,2009,July
"畠山友行,岡崎健,伏信一慶,石塚勝","熱・電気連成解析における緩和時間が発熱に与える影響","第46回日本伝熱シンポジウム","第46回日本伝熱シンポジウム講演論文集",,"Vol. 3",,"pp. 329-630",2009,June
"S. Hasmady,T. Hatakeyama,M. P. Wacker,K. Fushinobu,KEN OKAZAKI","Treatment of Heterogeneous Electrocatalysis in Modeling Transport-Reaction Phenomena in PEFCs",,"Thermal Science and Engineering",,"Vol. 17","No. 4","pp. 147-156",2009,
"T. Hatakeyama,K. Fushinobu,K. Okazaki","Impact of the Device Design on Electro-Thermal Properties of Si Devices","TFEC2008",,,,"No. F213",,2008,Oct.
"Yasufumi Yamamoto,Tomoyuki Hatakeyama,Kazuyoshi Fushinobu,Ken Okazaki","Electro-Thermal Analysis for Compact Heat Generation Model of Si MOSFET","The Seventh JSME-KSME Thermal and Fluids Engineering Conference (TFEC2008)",,,"  CD-ROM",,"  F134",2008,Oct.
"T. Hatakeyama,K. Fushinobu,K. Okazaki","Temperature and Applied Voltage Dependence of the Device Interactions in Bulk Si CMOS","IFHT2008",,,,"No. 194",,2008,Sept.
"山本泰史,畠山友行,伏信一慶,岡崎健","Si MOSFETにおけるコンパクト発熱モデルのための熱・電気連成解析","第４５回日本伝熱シンポジウム","第４５回日本伝熱シンポジウム講演論文集","社団法人日本伝熱学会","Vol. 2+3",,"pp. 683-684",2008,May
"畠山友行,伏信一慶,岡崎健","Si CMOS内デバイス間相互作用に関する実験","第４５回日本伝熱シンポジウム","第４５回日本伝熱シンポジウム講演論文集","社団法人日本伝熱学会","Vol. 2+3",,"pp. 685-686",2008,May
"畠山友行","シリコンナノデバイス熱管理のための熱・電気連成現象解明",,,,,,,2008,Mar.
"Tomoyuki Hatakeyama,KEN OKAZAKI,KAZUYOSHI FUSHINOBU","Electro-Thermal Analysis of Submicron Si MOSFET with Zoned Mesh Based on Semiconductor Physics Theory",,,,,,,2008,
"T. Hatakeyama,K. Fushinobu","Modeling of Heat Generation and Heat Flow in CMOS Device (Invited)",,"Heat Transfer Engineering",,"Vol. 29","No. 2","pp. 120-133",2008,
"Tomoyuki Hatakeyama,KAZUYOSHI FUSHINOBU","Modeling of Heat Generation and Heat Flow in CMOS Device (Invited)",,"Heat Transfer Engineering",,"Vol. 29","No. 2","pp. 120-133",2008,
"Tomoyuki Hatakeyama,Kazuyoshi Fushinobu,Ken Okazaki","ELECTRO-THERMAL ANALYSIS OF SUBMICRON Si MOSFET WITH ZONED MESH BASED ON SEMICONDUCTOR PHYSICS THEORY","The ASME-JSME 2007 Thermal Engineering and Summer Heat Transfer Conference","Proc. The ASME-JSME 2007 Thermal Engineering and Summer Heat Transfer Conference",,,,"pp. HT2007-32745",2007,July
"T. Hatakeyama,K. Fushinobu,K. Okazaki","Modeling of Heat Generation and Heat Flow in CMOS Device",,"Tokyo Tech - ?? Workshop",,,,,2007,July
"畠山 友行,伏信 一慶,岡崎 健","サブミクロンSi MOSFETの熱・電気連成解析におけるチャンネル部での最適メッシュサイズ","第44回日本伝熱シンポジウム","第44回日本伝熱シンポジウム講演論文集",,,,"pp. 417-418",2007,May
"Tomoyuki Hatakeyama,Kazuyoshi Fushinobu,Ken Okazaki","Device level thermal management of sub-100 nm semiconductor devices","rd International Nanotechnology Conference on Communication and Cooperation","Book of abstracts, 3rd International Nanotechnology Conference on Communication and Cooperation",,,,"pp. IN35",2007,Apr.
"畠山 友行,伏信 一慶,岡崎 健","サブミクロンSi MOSFETの熱・電気連成解析におけるメッシュサイズのゾーニング手法","熱工学コンファレンス2006","熱工学コンファレンス2006講演論文集",,,,"pp. 263-264",2006,Nov.
"T. Hatakeyama,K. Fushinobu,K. Okazaki","Device Interactions of Submicron Si CMOS in Transient State","17th ISTP","Proc. 17th ISTP",,,,"pp. 2-E-I-2",2006,Sept.
"T. Hatakeyama,K. Fushinobu,K. Okazaki","Temperature and Time Dependence of Device Interactions in Submicron Si CMOS","9th AIAA/ASME Joint Thermophysics and Heat Transfer Conference","Proc. 9th AIAA/ASME Joint Thermophysics and Heat Transfer Conference",,,,"pp. AIAA-2006-3611",2006,June
"畠山友行,伏信一慶,岡崎健","サブミクロンSi CMOSにおけるデバイス間相互作用の熱・電気連成解析","第43回日本伝熱シンポジウム","第43回日本伝熱シンポジウム講演論文集",,,,"pp. 35-36",2006,May
"Tomoyuki Hatakeyama,K. Fushinobu,KEN OKAZAKI","Electro-thermal analysis of device interactions in Si CMOS structure","EMAP2005","Proc. EMAP2005",,,,"pp. 296-301",2005,Dec.
"Tomoyuki Hatakeyama,K. Fushinobu,KEN OKAZAKI","Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS","InterPACK'05","Proc. InterPACK'05",,,,"pp. IPACK2005-73151 (CD-ROM)",2005,July
"Tomoyuki Hatakeyama,K. Fushinobu,KEN OKAZAKI","Electro-thermal analysis of interactions between Si MOSFETs in CMOS structures","Japan/US Joint Seminar on Nanoscale Transport Phenomena -Science and Engineering -","Abstracts of Japan/US Joint Seminar on Nanoscale Transport Phenomena -Science and Engineering -",,,,"pp. 55",2005,July