"T. Nagase,H. Kominami,Y. Nakanishi,K. Shinozaki,N. Mizutani","Improvement of green cathodoluminescence of zinc oxide stacked films prepared by high-power excimer laser irradiation of sol-gel-derived precursors",,"Thin Solid Films",,"Vol. 518","No. 14","pp. 3875-3878",2010,May
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","TEM-EELS法による酸化物強誘電体薄膜の局所光学特性評価","日本顕微鏡学会・第32回関東支部講演会","日本顕微鏡学会・第32回関東支部講演会",,,"No. P-18","pp. 107",2008,Mar.
"Naoki Wakiya,Toyokazu Nagamune,JI-WON MOON,TAKANORI KIGUCHI,NOBUYASU MIZUTANI,Hisao Suzuki,Kazuo Shinozaki","The effect of SrTiO<sub>3</sub> seed and application of in-situ magnetic field on the preparation of Pb(Zr,Ti)O<sub>3</sub> thin film by pulsed laser deposition",,"Trans. Mater. Res. Soc. Jpn.",,"Vol. 32",,"pp. 99-104",2007,Dec.
"Naoki Wakiya,Tomohiro Tabara,Naonori Sakamoto,Tomoya Ohno,Takanori Kiguchi,Nobuyasu Mizutani,Kazuo Shinozaki,Hisao Suzuki","Multiferroic property of layered PZT and ferromagnetic film","13th US-Japan Seninar on Dielectrics and Piezoelectric Ceramics","Extended Abstracts of 13th US-Japan Seninar on Dielectrics and Piezoelectric Ceramics",,,,"p. 208-211",2007,Nov.
"脇谷尚樹,篠崎和夫,坂元尚紀,水谷惟恭,鈴木久男","PZT/強磁性体積層薄膜における磁場中での強誘電特性","第20回日本セラミックス協会 秋季シンポジウム","第20回日本セラミックス協会 秋季シンポジウム講演予稿集",,,"  1PL20","p. 283",2007,Sept.
"Hyun-young Go,Naoki Wakiya,Hiroshi Funakubo,Keisuke Satoh,Masao Kondo,Jeffrey Scott Cross,Kenji Maruyama,Nobuyasu Mizutani,Kazuo Shinozaki","Effect of Oxygen Annealing on Ferrroelectricity of BiFeO<sub>3</sub> Thin Films formed by Pulsed Laser Deposition",,"Jpn. J. Appl. Phys.",,"Vol. 46","No. 6A","p. 3491-3494",2007,June
"Naoki Wakiya,Keisyu Muraoka,TAKANORI KIGUCHI,NOBUYASU MIZUTANI,K. Shinozaki","Preparation of ferromagnetic zinc-ferrite thin film by pulsed laser deposition in the magnetic field",,"J. Magnetism and Magnetic Mater.",,"Vol. 310","No. 3","pp. 2546-2548",2007,Mar.
"Kazuo Shinozaki,Masayasu Kasahara,TAKANORI KIGUCHI,NOBUYASU MIZUTANI,Naoki Wakiya","Preparation and Structure of Lead Magnesium Niobate Titanate Film by Double-Pulse Excitation using Nd:YAG and KrF Excimer Lasers",,"Jap. J. Applied Phys.",,"Vol. 46","No. 2","pp. 657-659",2007,
"J.-W.Moon,S.Tazawa,N.Wakiya,T.Kiguchi,Y.Ishida,N. Mizutani,K.Shinozaki","Effect of Source Supply Methods on Low-Temperature Preparation of Lead Zirconate Titanate Thin Films Using SrTiO<sub>3</sub> Seed Layers by Metallorganic Chemical Vapor Deposition",,"Solid State Phenomena",,"Vol. 124-126",,"pp. 153-156",2007,
"Tomoaki Yamada,Jan Petzelt,Alexander K Tagantsev,S. Denisov,D. Noujini,P. K. Petrov,A. Mackova,T. Kiguchi,K. Fujito,K. Shinozaki,N. Mizutani,V. O. Sherman,P. Muralt,N. Setter","Split of In-plane and Out-of-plane Ferroelectric Instabilities in Compressed (001)-epitaxial SrTiO3 film",,"MRS Fall Meeting",,,"No. T8.7",,2006,Nov.
"Bok-Hee KIM,Ji-Won MOON,Young-Deuk SONG,水谷 惟恭,篠崎 和夫","溶液気化化学気相堆積法 (LSMCVD) による PbTiO3 薄膜の作製",,"日本セラミックス協会学術論文誌",,"Vol. 114","No. 1331","p. 603-606",2006,July
"高大連携専門委員会（文責：水谷惟恭,山室恭子）","高大連携教育システム―2泊3日のサマーチャレンジ",,"東工大クロニクル",,,"No. 392","pp. 2-9",2004,
"水谷惟恭,木口賢紀","総合分析支援センターの紹介",,"東工大クロニクル",,,"No. 389","pp. 8-12",2004,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Growth Behavior of Epitaxial MgO Films on Si(001) by Pulsed Laser Deposition",,"Key Engineering Materials",,"Vol. 253",,"pp. 119-128",2003,Nov.
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Epitaxial Growth of SrTiO<sub>3</sub> Films on CeO<sub>2</sub>/YSZ/Si(001) with TiO<sub>2</sub> Atomic Layer by Pulsed Laser Deposition",,"Appl. Phys. Lett.",,"Vol. 83",,"pp. 4815-4817",2003,
"脇谷尚樹,篠崎和夫,水谷惟恭","Si(001)基板上に作製したエピタキシャル成長ニッケル亜鉛フェライト薄膜の結晶構造と磁気特性におよぼすバッファー層の効果",,"第27回日本応用磁気学会学術講演会",,,"No. 16aF-4","pp. 108",2003,
"Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Direct observation of unequal lattice change of ceramics thin films at high temperature due to film thickness and substrate",,"The 5th International Meeting of Pacific Rim Ceramic Societies Incorporating the 16th Fall Meeting of the Ceramic Society of Japan",,,"No. 21-P-03","pp. 292",2003,
"脇谷尚樹,篠崎和夫,水谷惟恭","ZnCo<sub>2</sub>O<sub>4</sub>バッファー層を導入したエピタキシャル(Ni, Zn)Fe<sub>2</sub>O<sub>4</sub>薄膜の結晶構造と磁気特性",,"第50回応用物理学関係連合講演会",,,"No. 27p-N-7","pp. 210",2003,
"脇谷尚樹,篠崎和夫,水谷惟恭","ニッケル亜鉛フェライトエピタキシャル薄膜のミスマッチ制御と磁気特性の関係",,"日本セラミックス協会2003年年会講演予稿集",,,"No. 2J35","pp. 278",2003,
"（座談会）尾野幹也（司会）,柳田博明,水谷惟恭,平野眞一","工学教育の在り方",,"セラミックデータブック2003","セラミックデータブック2003","Vol. 31",,"pp. 11-18",2003,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Low temperature epitaxial growth of ceramic thin film using nano-metwe-thick buffer layers",,"The 5th International Meeting of Pacific Rim Ceramic Societies Incorporating the 16th Fall Meeting of the Ceramic Society of Japan",,,"No. 15-O-02","pp. 229",2003,
"水谷惟恭","セラミック薄膜への招待―バルクとの相異の一断面―",,"セラミックデータブック2003","セラミックデータブック2003","Vol. 31",,"pp. 25-28",2003,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Modification of drain current of MOS-FET by the remanent magnetization for new memory",,"The 5th International Meeting of Pacific Rim Ceramic Societies Incorporating the 16th Fall Meeting of the Ceramic Society of Japan",,,"No. 15-P-01","pp. 232",2003,
"篠崎和夫,脇谷尚樹,水谷惟恭","機能性薄膜におけるバッファーレイヤの役割",,"マテリアルインテグレーション",,"Vol. 16","No. 3","pp. 30-35",2003,
"篠崎和夫,木口賢紀,佐伯淳,脇谷尚樹,水谷惟恭","バッファーレイヤーのセラミック薄膜への適用",,"セラミックス",,"Vol. 38","No. 7","pp. 485-490",2003,
"永戸 厚,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法により配向制御させたNb添加SrTiO<sub>3</sub>薄膜の作製とその半導性",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 1B08","pp. 29",2002,
"水上 智,清水 完,脇谷尚樹,篠崎和夫,水谷惟恭","強磁性体薄膜の残留磁化がMOSトランジスタのI-V特性に及ぼす影響(II):ゲートをはさんで作製した磁気回路･対向パターン構造によるI-V特性",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 1B07","pp. 28",2002,
"清水 完,水上 智,脇谷尚樹,篠崎和夫,水谷惟恭","強磁性体薄膜の残留磁化がMOSトランジスタのI-V特性に及ぼす影響(I):ゲート直上に作製したエピタキシャル(Mn,Zn)Fe<sub>2</sub>O<sub>4</sub>薄膜によるI-V特性",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 1B06","pp. 27",2002,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Structural and Electrical Properties of (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films with a Thin Bi<sub>2</sub>O<sub>3</sub> Top-layer Prepared by Chemical Solution Deposition Method",,"Extended Abstraccts of the 22nd Electronics Division Meeting",,,"No. 1B05","pp. 26",2002,
"藤戸啓輔,脇谷尚樹,篠崎和夫,水谷惟恭","パルスMOCVD法において原料供給方法がPZT薄膜の微構造と誘電特性に与える影響",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 1B04","pp. 25",2002,
"山田智明･脇谷尚樹･篠崎和夫･水谷惟恭･近藤正雄･栗原和明","Si基板上におけるエピタキシャルPb(Mg<sub>1/3</sub>,Nb<sub>2/3</sub>)O<sub>3</sub>薄膜のバッファー構造とその誘電特性",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 1B03","pp. 24",2002,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","希土類酸化物安定化ジルコニアエピタキシャルゲート絶縁膜のC-V特性向上と界面反応抑制",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 1B02","pp. 23",2002,
"脇谷尚樹,石垣寛和,篠崎和夫,水谷惟恭","YSZ/Siエピタキシャル薄膜の室温合成と誘電特性",,"第63回応用物理学会学術講演会講演予稿集",,,"No. 24p-P4-26","pp. 451",2002,
"篠崎和夫,有持祐之,脇谷尚樹,水谷惟恭","強磁性体ゲートを用いたMOSFET構造の試作とメモリー特性の検討",,"第63回応用物理学会学術講演会講演予稿集",,,"No. 24a-P2-21","pp. 145",2002,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","種々の希土類元素を添加したジルコニアゲート絶縁膜の界面構造の高分解能 TEM 観察",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3L19","pp. 266",2002,
"永戸厚,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD 法による Nb 添加 SrTiO<sub>3</sub> 多結晶薄膜の作成とその半導性",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3L05","pp. 261",2002,
"Bao Dinghua,Wakiya Naoki,Shinozaki Kazuo,Mizutani Nobuyasu","Structural and electrical properties of (Ba,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films with a thin Bi<sub>2</sub>O<sub>3</sub> top-Layer prepared by chemical solution deposition method",,"15th Fall Meeting of The Ceramic Society of Japan",,,"No. 3L03","pp. 260",2002,
"水上 智,清水 完,桜井 修,脇谷尚樹,篠崎和夫,水谷惟恭","Ni-Zn フェライト薄膜を成膜した FET 型トランジスタのメモリ動作への実現",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3J09","pp. 249",2002,
"有持祐之,脇谷尚樹,篠崎和夫,水谷惟恭","強磁性体/FET トランジスタ構造の試作とメモリーデバイスとしての可能性",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3J08","pp. 249",2002,
"清水 完,水上 智,松山勝美,脇谷尚樹,篠崎和夫,水谷惟恭","強磁性ゲート薄膜を有する MOS トランジスタの I-V 特性",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3J07","pp. 248",2002,
"脇谷尚樹,篠崎和夫,水谷惟恭","バッファー層の最適化による高角形比(Mr/Ms)エピタキシャル(Ni,Zn)Fe<sub>2</sub>O<sub>4</sub> 薄膜の作製",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3J02","pp. 246",2002,
"佐伯 淳,脇谷尚樹,篠崎和夫,水谷惟恭","セラミックス薄膜の高温格子変化における基盤及びバッファー層の影響",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3D04","pp. 209",2002,
"邱 徳威,脇谷尚樹,篠崎和夫,水谷惟恭","基板サイズが化学溶液法による Bi-La-Ti-O 薄膜の配向性及び電気特性への影響",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 2L16","pp. 194",2002,
"山田智明,脇谷尚樹,篠崎和夫,水谷惟恭,近藤正雄,栗原和明","Si 基板上におけ るPb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>薄膜のエピタキシャル成長過程と誘電特性",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 2L04","pp. 190",2002,
"藤戸啓輔,脇谷尚樹,篠崎和夫,水谷惟恭","パルス MOCVD 法で原料供給方法を変化させた PZT 薄膜の微構造の高品質化",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 2L03","pp. 189",2002,
"横村伸緒,脇谷尚樹,篠崎和夫,水谷惟恭","超微粒子シードを用いたCSD法PZT薄膜の低温合成",,"第15回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1L19","pp. 96",2002,
"Te-Wei Chiu,N.Wakiya,K.Shinozaki,N.Mizutani","Electrical Properties of Vanadium Doped Bi-La-Ti-O Thin Films Derived by Chemical Solution Deposition Method",,"International Joint Conference on theApplications of Ferroelectrics 2002, Abstract book",,,"No. 31H-PP1-26P","pp. 380",2002,
"T.Kiguchi,N.Wakiya,K.Shinozaki,N.Mizutani","Role of Ultra Thin SiO<sub>x </sub>Layer on Epitaxial YSZ/SiO<sub>x</sub>/Si Thin Film as Multi Functional Buffer Layer by Nano-probe and In-situ RTEM Investigation",,"International Joint Conference on theApplications of Ferroelectrics 2002, Abstract book",,,"No. 31G-TE2-10P","pp. 348",2002,
"T.Yamada,N.Wakiya,K.Shinozaki,N.Mizutani","Depth Profile of Fixed Charge in Epitaxial Oxide Films on Silicon Substrate for MFIS Structure",,"International Joint Conference on theApplications of Ferroelectrics 2002, Abstract book",,,"No. 30G-MM-13P","pp. 229",2002,
"N.Wakiya,K.Shinozaki,N.Mizutani","Ferroelectric Property of PZT(001) Thin Film Deposited on Epitaxial (Ni,Zn,Fe)Fe<sub>2</sub>O<sub>4</sub>(111) Thin Film for Novel Ferroelectric/Ferropmagmetic Memory Application",,"International Joint Conference on theApplications of Ferroelectrics 2002, Abstract book",,,"No. 30A-TF4-3C","pp. 154",2002,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","YSZ/SiO<sub>x</sub>/Si薄膜の結晶化過程の加熱in-situ TEM観察",,"日本電子顕微鏡学会関東支部 第26回講演会予稿集",,,"No. P-14","pp. 112",2002,
"脇谷尚樹,清水 完,水上 智,篠崎和夫,水谷惟恭","MOSFETのゲート上に作成した強磁性体薄膜によるホール効果",,"日本セラミックス協会2002年年会講演予稿集",,,"No. 2C24","pp. 173",2002,
"長瀬智美,和田麻美子,石村朋広,大家利彦,水谷惟恭","ゾルゲル前駆体へのエキシマレーザ照射誘起法による酸化亜鉛薄膜の緑色カソードルミネッセンス",,"日本セラミックス協会2002年年会講演予稿集",,,"No. 2B37","pp. 162",2002,
"山田智明,脇谷尚樹,篠崎和夫,水谷惟恭","Si基板上におけるヘテロエピタキシャルSrTiO<sub>3</sub>/MgO薄膜の固定電荷プロファイルとその電荷量",,"日本セラミックス協会2002年年会講演予稿集",,,"No. 2A30","pp. 143",2002,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","エピタキシャルPZT/LSCO/CeO<sub>2</sub>/YSZ/Si積層構造のZr/Ti比による90°ドメイン構造変化のTEM観察",,"日本セラミックス協会2002年年会講演予稿集",,,"No. 2A29","pp. 142",2002,
"D.Bao,N.Wakiya,K.Shinozaki,N.Mizutani","Ferroelectric properties of several (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> composite thin films prepared by a chemical solution decomposition method",,"Annual Meeting of The Ceramic Society of Japan, 2002",,,"No. 2A27","pp. 141",2002,
"T.Chiu,N.Wakiya,K.Shinozaki,N.Mizutani","Structural and electrical properties of (Bi,La)<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> thin film derived by  metalorganic decomposition method",,"日本セラミックス協会2002年年会講演予稿集",,,"No. 2A26","pp. 141",2002,
"佐伯 淳,篠崎和夫,水谷惟恭","タングステンブロンズ系薄膜の高温X線逆格子空間マップ測定",,"日本セラミックス協会2002年年会講演予稿集",,,"No. 1B14","pp. 15",2002,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","PZT薄膜の90°ドメイン構造のTEM観察と強誘電特性",,"電子情報通信学会,シリコン材料･デバイス研究会 電子情報通信学会技術研究報告SDM2001",,,,"pp. 264",2002,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Dielectric and Ferroelectric Properties of Pb(Zr,Ti)O<sub>3</sub>/(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Bilayered Thin Films on Pt/Ti/SiO<sub>2</sub>/Si Substrates",,"The 40th Symposium on Basic Science of Ceramics",,,"No. 2A-03I","pp. 264-265",2002,
"D. Bao,N. Wakiya,K.Shinozaki,N. Mizutani","Ferroelectric Properties of Sandwich Structured (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/Pb(Zr,Ti)O<sub>3</sub>/(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films on Pt/Ti/SiO<sub>2</sub>/Si substrates",,"J. Phys. D: Appl. Phys.",,"Vol. 35",,"pp. L1-L5",2002,
"C.H.Chen,A. Saiki,N. Wakiya,K. Shinozaki,N. Mizutani","Distinct correlation between CeO<sub>2</sub> and YSZ in out-of-place and in-place mosaic dispersions of heteroepitaxial CeO<sub>2</sub>/YSZ/Si(001) films",,"Appl. Phys. A",,"Vol. 74",,"pp. 693-697",2002,
"Hirokazu Ishigaki,Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation of Epitaxial YSZ Thin film Deposited on SiO<sub>2</sub>/Si(001) at Room Temperature by Pulsed Laser Deposition(PLD)",,"J. Ceram. Soc. Japan",,"Vol. 110","No. 5","pp. 333-337",2002,
"水谷惟恭","総合分析支援センター開所式を開催",,"東京工大クロニクル",,"Vol. 364",,"pp. 21",2002,
"水谷惟恭","大学の国際化と語学教育?待ったなしの思い切った発想?",,"東京工業大学外国語研究教育センターNEWSLETTER",,"Vol. 8",,"pp. 4-5",2002,
"佐伯 淳,篠崎和夫,水谷惟恭","セラミックス薄膜の高温における格子変化の直接観察",,"日本結晶学会2002年年会",,,"No. OA-II-01","pp. 30",2002,
"Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","HRTEM Investigation of 90.Domain Configureuration and P-E Hysteresis Loop of Epitaxial PZT Multilayered Thin Films",,"Material Research Society, 2002 Fall Meeting(",,,"No. U5.1","pp. 206",2002,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismouth Oxide Template Layers",,"Material Research Society, 2002 Fall Meeting(",,,"No. U12.23","pp. 210",2002,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Epitaxial Growth and Magnetic Behavior of (Ni, Zn)Fe<sub>2</sub>O<sub>4</sub> Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application",,"Material Research Society, 2002 Fall Meeting(",,,"No. T3.4","pp. 200",2002,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO<sub>3</sub> films on CeO<sub>2</sub>/YSZ/Si(001)",,"Material Research Society, 2002 Fall Meeting(",,,"No. T1.7","pp. 200",2002,
"Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","HRTEM Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-K Gate Dielectrics",,"Material Research Society, 2002 Fall Meeting(",,,"No. N9.7/T7.7","pp. 176",2002,
"Naoki Wakiya,Tomohiko Moriya,Kazuo Shinozaki,Nobuyasu Mizutani","Suppression of Hysteriesis in Capacitance-Voltage(C-V)Characeristics of YSZ/Si(001) and ZrO<sub>2</sub>/Si Thin Films by Nb-doping",,"Material Research Society, 2002 Fall Meeting(",,,"No. N9.1/T7.1","pp. 176",2002,
"Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","HRTEM investigation of 90.domain structure and ferroelectric properties of multi-layered PZT thin films",,"The 8th International Union of Materials Research Scociety  International Conference on Electronic Materials(IUMRS-ICEM)",,,"No. P-050","pp. 659",2002,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","PZT/LSCO/CeO<sub>2</sub>/YSZ/SiO<sub>x</sub>/Si積層薄膜の90.ドメイン構造のHRTEM観察",,"日本電子顕微鏡学会第58回年会",,,"No. P-77","pp. 266",2002,
"Dinghua Bao,Xi Yao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Structural, dielectric, and ferroelectric properties of PbTiO<sub>3</sub> thin films by a simple sol-geltechnique",,"MaterialScience and Engineering",,"Vol. B94",,"pp. 269-274",2002,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Orientation Control and Properties of Pb(Zr,Ti)O<sub>3</sub> Thin Films Deposited on Ni-Zn-Ferrite for Novel Ferroelectric/Ferromagnetic Memory Applications",,"Jpn. J. Appl.Phys.",,"Vol. 41",,"pp. 7242-7248",2002,
"Yongsam Kim,Chun-Hua Chen,Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effects of Nb and Sr doping on crystal structure of epitaxial BaTiO<sub>3</sub> thin films on MgO substrates",,"Journal of Physics D: Applied Physics",,"Vol. 35",,"pp. 1499-1503",2002,
"Chun-Hua Chen,Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effects of deposition temperature on structural defect and electrical resistivity in heteroepitaxial La<sub>0.5</sub>Sr<sub>0.5</sub>CoO<sub>3</sub>/CeO<sub>2</sub>/YSZ/Si films",,"J. Vac. Sci, Technol.",,"Vol. A20","No. 5","pp. 1749-1754",2002,
"T.-W. Chiu,N. Wakiya,K. Shinozaki,N. Mizutani","Electrical Properties of Vanadium Doped Bi-La-Ti-O Thin Films Derived by Chemical Solution Deposition Method",,"Integrated Ferroelectrics",,"Vol. 47",,"pp. 187-196",2002,
"Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Role of ultra thin SiO<sub>x</sub> layer on epitaxial YSZ/SiO<sub>x</sub>/Si thin film as multi functional buffer layer by nano-probe and in-situ TEM investigation",,"Integrated Ferroelectrics",,"Vol. 45",,"pp. 89-96",2002,
"朝日隆太郎,脇谷尚樹,篠崎和夫,水谷惟恭","微細加工による強誘電体/FETトランジスタ構造体の試作",,"第18回日本セラミックス協会関東支部研究発表会",,,"No. 2B01","pp. 63",2002,
"田澤祥吾,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法PZT薄膜の結晶化に及ぼすPbTiO<sub>3</sub>シード層の効果",,"第18回日本セラミックス協会関東支部研究発表会",,,"No. 1B07","pp. 36",2002,
"横井博和,脇谷尚樹,篠崎和夫,水谷惟恭","RFマグネトロンスパッタリング法によるLaNiO<sub>3</sub>電極/BaTiO<sub>3</sub>積層薄膜コンデンサの試作と誘電特性",,"第18回日本セラミックス協会関東支部研究発表会",,,"No. 1B03","pp. 32",2002,
"金 容三,脇谷尚樹,篠崎和夫,水谷惟恭","チタン酸バリウム･ターゲットを用いたRFマグネトロン･スパッタリング法によるチタン酸バリウム薄膜の組成及び結晶構造",,"第18回日本セラミックス協会関東支部研究発表会",,,"No. 1B02","pp. 31",2002,
"Kazuo Shinozaki,Naoki Wakiya,Nobuyasu Mizutani","Growth of Epitaxial Thin Films and Control Residual Stress in thin Films by Introducing Buffer Layers",,"The 1st thin film /single crystal symposium",,,"No. 6","pp. 158-219",2002,
"邱 徳威,脇谷尚樹,篠崎和夫,水谷惟恭","化学溶液法によるBi-La-Ti-O薄膜の配向制御",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 2PB13","pp. 63",2002,
"脇谷尚樹,篠崎和夫,水谷惟恭","強磁性体メモリー応用を目指したエピタキシャル(Ni,Zn)Fe<sub>2</sub>O<sub>4</sub>薄膜の配向制御とドメイン構造",,"日本セラミックス協会電子材料部会第22回電子材料研究討論会講演予稿集",,,"No. 2A09","pp. 42",2002,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation of heteroepitaxial Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>(PMN) thin film by pulsed laser deposition on Si(001) substrate using La<sub>0.5</sub>Sr<sub>0.5</sub>CoO<sub>3</sub>(LSCO)/CeO<sub>2</sub>/YSZ triple buffer",,"Thin Solid Films",,"Vol. 384",,"pp. 189-194",2001,
"Dinghua Bao,Nobuyasu Mizutani,Liangying Zhang,Xi Yao","Composition gradient optimization and electrical characterization of (Pb, Ca)TiO3 thin films",,"J. of Applied Physics",,"Vol. 89","No. 1","pp. 801-803",2001,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO<sub>2</sub>/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/ Semiconductor Structure",,"Jpn. J. Appl. Phys.",,"Vol. 40","No. 1","pp. 281-284",2001,
"Jui-Kai Wang,Naoki Wakiya,Nobuyasu Mizutani,Kazuo Shinozaki","Phase Transformation and Densification Behavior of La-Modified Lead Metaniobate Ceramics",,"J. Ceram. Soc. Japan",,"Vol. 109","No. 2","pp. 89-93",2001,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation of heteroepitaxial Pb(Mg1/3Nb2/3)O3(PMN) thin film by pulsed laser deposition on Si(001) substrate using La0.5Sr0.5CoO3(LSCO)/CeO2/YSZ triple buffer",,"Thin Solid Films",,"Vol. 384",,"pp. 189-194",2001,
"Shingo Nagata,Naoki Waiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation and Electric Properties of PbTiO<sub>3</sub> Thin Films by Low-pressure Thermal Plasma Deposition",,"The Korean Journal of Ceramics",,"Vol. 7","No. 1","pp. 20-25",2001,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani,Xi Yao","Improved electrical properties of (Pb, La)TiO<sub>3</sub> thin films using compositionally and structurally compatible LaNiO3 thin films as bottom electrodes",,"Applied Physics Letters",,"Vol. 78","No. 21","pp. 3286-3288",2001,
"Hirokazu Ishigaki,Tomoaki Yamada,Naoki Wakiya,Nobuyasu Mizutani,Kazuo Shinozaki","Effect of the Thickness of SiO<sub>2</sub> under Layer on the Initial Stage of Epitaxial Growth Process of Yttria-Stabilized Zirconia (YSZ) Thin Film Deposited on Si(001) Substrate",,"J. Ceram. Soc. Japan",,"Vol. 109","No. 9","pp. 766-770",2001,
"木口賢紀,水谷惟恭","セラミック薄膜断面のTEMによるその場観察",,"セラミックデータブック2001",,"Vol. 29",,"pp. 127-130",2001,
"脇谷尚樹,篠崎和夫,水谷惟恭","酸化物薄膜のエピタキシャル積層化とバッファーレイヤの役割",,"セラミックデータブック2001",,"Vol. 29",,"pp. 43-48",2001,
"脇谷尚樹,永野大介,山田智明,水谷惟恭","MOCVD法およびPLD法によるセラミックス薄膜作製技術の進歩と作製した薄膜の結晶構造",,"鉱山",,,"No. 584","pp. 18-38",2001,
"水谷惟恭,篠崎和夫","セラミックス系機能材料の開発動向と応用展開",,"高圧ガス",,"Vol. 38","No. 7","pp. 6-13",2001,
"水谷惟恭","セラミックスと電気化学",,"電気化学および工業物理化学",,"Vol. 69","No. 1","pp. 51",2001,
"水谷惟恭","工学部長就任挨拶─ひとり言─",,"東京工大クロニクル",,,"No. 354","pp. 5",2001,
"水谷惟恭,玄 一,包 定華,篠崎和夫,脇谷尚樹","セラミックインテグレーション用PZT薄膜の表面組成制御による誘電特性の向上",,"日本セラミックス協会第39回セラミックス基礎科学討論会講演要旨集",,,,,2001,
"水谷惟恭","電子セラミックス薄膜の特色",,"ニューセラミックス懇話会",,,"No. 1","pp. 1-2",2001,
"山田智明,石垣寛和,脇谷尚樹,篠崎和夫,水谷惟恭","第一原子層制御によるCeO<sub>2</sub>/YSZ/Si(001)上の(001)エピタキシャルSrTiO<sub>3</sub>薄膜のMFMIS構造とその電気特性",,"第18回強誘電体応用会議",,,"No. 30-T-1","pp. 13",2001,
"Chun-Hua Chen,Naoki Wakiya,Atsushi saiki,Kazuo Shinozaki,Nobuyasu Mizutani","Defects in heteroepitaxial CeO<sub>2</sub>/YSZ/Si(001) films by precise X-ray rocking curves distributions fitness",,"The 21st International Conference on defects in Semiconductors",,,"No. PB116","pp. 343",2001,
"清水 完,水上 智,脇谷尚樹,篠崎和夫,水谷惟恭","フェライト/Ge/Si薄膜における残留磁化によるホール効果発現の可能性",,"第17回日本セラミックス協会関東支部研究発表会",,,"No. 1B15","pp. 33",2001,
"水上 智,清水 完,脇谷尚樹,篠崎和夫,水谷惟恭","PLD法によﾘ作製したNi-Znフェライト薄膜の磁気特性に及ぼす組成,結晶構造の影響",,"第17回日本セラミックス協会関東支部研究発表会",,,"No. 1B16","pp. 34",2001,
"横村伸緒,脇谷尚樹,篠崎和夫,水谷惟恭","部分加水分解PbTiO3微粒子を含むPZT組成溶液によるPZT薄膜の低温合成",,"第17回日本セラミックス協会関東支部研究発表会",,,"No. 1C04","pp. 39",2001,
"藤戸啓輔,脇谷尚樹,篠崎和夫,水谷惟恭","下部電極がエピタキシャルPZT薄膜の残留応力と誘電特性に与える影響",,"第17回日本セラミックス協会関東支部研究発表会",,,"No. 1C05","pp. 40",2001,
"岩崎彰則,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD装置用ポータブル原料ユニットの試作とその応用",,"第17回日本セラミックス協会関東支部研究発表会",,,"No. 1C06","pp. 41",2001,
"永戸 厚,杉浦光典,永野大介,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法によるNb-SrTiO<sub>3</sub>/Bi<sub>2</sub>O<sub>3</sub>/Nb-SrTiO<sub>3</sub>積層薄膜の成膜とI-V特性",,"第17回日本セラミックス協会関東支部研究発表会",,,"No. 1C13","pp. 48",2001,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Change of Epitaxial Relation for SrTiO<sub>3</sub> Films on CeO<sub>2</sub>/YSZ/Si(001) by the Control of First Atomic Layer",,"The thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy",,,"No. 02a-S11-04","pp. 325",2001,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation and electrical properties of (Bi,La)TiO<sub>3</sub>/Pb(Zr,Ti)O<sub>3</sub>/(Bi,La)TiO<sub>3</sub> multilayer thin films by a chemical solution deposition method",,"The 10th International Meeting on Ferroelectricity",,,"No. PS2A-10","pp. 105",2001,
"Dinghua Bao,Xi Yao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","A simple sol-gel technique of conductive LaNiO<sub>3</sub> film electrodes for integrated ferroelectric thin film devices",,"The 10th International Meeting on Ferroelectricity",,,"No. PS2C-29","pp. 136",2001,
"Naoki Wakiya,Dinghua Bao,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation and property of novel ferroelectric and ferromagnetic array structure thin film",,"The 10th International Meeting on Ferroelectricity",,,"No. PS5B-30","pp. 245",2001,
"脇谷尚樹,篠崎和夫,水谷惟恭","強誘電体(Pb(Zr,Ti)O<sub>3</sub>)/強磁性体積層薄膜における強誘電性,強磁性同時発現に向けた強磁性体およびバッファー層の最適化",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D17","pp. 33",2001,
"脇谷尚樹,東 孝彰,篠崎和夫,水谷惟恭","RFマグネトロンスパッタリング法による導電性LaNiO<sub>3</sub>薄膜の低温エピタキシャル成長",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D18","pp. 33",2001,
"邱 徳威,脇谷尚樹,篠崎和夫,水谷惟恭","Influence of N<sub>2</sub>O gas on preparation of Sr<sub>0.5</sub>Ba<sub>0.5</sub>Nb<sub>2</sub>O<sub>6</sub> thin films",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D19","pp. 34",2001,
"山本和生,平山 司,柴田義典,脇谷尚樹,篠崎和夫,水谷惟恭","電子線ホログラフィによるニッケルフェライトエピタキシャル膜の磁区構造観察",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D20","pp. 34",2001,
"石垣寛和,山田智明,脇谷尚樹,篠崎和夫,水谷惟恭","Si(001)基板上低温化エピタキシャルYSZ薄膜の合成の実現化",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D22","pp. 35",2001,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","加熱TEM観察によるYSZ/SiOx/Si薄膜におけるSiOx層の還元過程の解明",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D23","pp. 36",2001,
"山田智明,脇谷尚樹,篠崎和夫,水谷惟恭","第一原子層制御を用いたヘテロエピタキシャルSrTiO<sub>3</sub>/CeO<sub>2</sub>(001)薄膜の界面特性とその安定性",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1D25","pp. 37",2001,
"大杉正樹,岩崎彰則,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法におけるPbZrO<sub>3</sub>,PbTiO<sub>3</sub>薄膜の成膜におよぼす気相組成の影響",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1F21","pp. 52",2001,
"Chun-Hua Chen,Naoki Wakiya,Takanori Kiguchi,Kazuo Shinozaki,Nobuyasu Mizutani","Mosaic defect identification in multi-heteroepitaxial films by high-resolution X-ray diffraction",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 1F25","pp. 54",2001,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Fatigue-free ferroelectric properties of (Bi,La)TiO<sub>3</sub>/Pb(Zr,Ti)O<sub>3</sub>/(Bi,La)TiO<sub>3</sub> sandwich structure thin films on Pt/Ti/SiO<sub>2</sub>/Si substrates",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 2D08","pp. 132",2001,
"横村伸緒,脇谷尚樹,篠崎和夫,水谷惟恭","CSD法によるPZT薄膜の結晶化に及ぼす酸化物微粒子分散の効果",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 2D09","pp. 132",2001,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","加熱TEM観察によるPZT薄膜の結晶成長に及ぼすシード層の効果の解明",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3D03","pp. 224",2001,
"石田陽平,脇谷尚樹,篠崎和夫,水谷惟恭","PLD法により導入したシード層上にMOCVD法で形成したPZT薄膜の微構造と電気特性",,"第14回日本セラミックス協会秋季シンポジウム講演予稿集",,,"No. 3D04","pp. 225",2001,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","(001)-epitaxial growth of MgO thin films on Si(001) and the role of interfacial SiO<sub>x</sub> layer",,"International Workshop on Ceramic interfaces: Properties and Applications V",,,,,2001,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Orientation and property control of epitaxial (Ni,Zn)Fe<sub>2</sub>O<sub>4</sub> thin film by the introduction of ultra-thin Al<sub>2</sub>O<sub>3</sub>-doped MgO buffer layer",,"International Workshop on Ceramic interfaces: Properties and Applications V",,,,,2001,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation of Novel Metal/Ferroelectrics/Metal/Insulator/Semiconductor (MFMIS) Structure using Metallic Ferromagnetics as a Floating Gate and its Ferroelectric Properties",,"Extended Abstracts of the 2nd Asian Meeting on Electroceramics",,,"No. 1A09","pp. 16",2001,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Ferroelectric and Dielectric Properties of (Bi,La)TiO<sub>3</sub>/Pb(Zr,Ti)O<sub>3</sub> Multilayer Thin Films on LaNiO<sub>3</sub>-Coated Pt/Ti/SiO<sub>2</sub>/Si Substrates",,"Extended Abstracts of the 2nd Asian Meeting on Electroceramics",,,"No. 1A10","pp. 17",2001,
"Chun-Hua Chen,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Film Thickness Dependence of Structure and Dielectric Property of Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>/ BaTiO<sub>3</sub>/Pt/Ti/SiO<sub>2</sub>/Si by Grazing Incident X-ray Diffraction",,"Extended Abstracts of the 2nd Asian Meeting on Electroceramics",,,"No. 1A11","pp. 18",2001,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Growth Mechanism and Interface Stability of Perovskite Thin Films (SrTiO<sub>3</sub>, SrRuO<sub>3</sub>, LaNiO<sub>3</sub>) on CeO<sub>2</sub>(001) Surface",,"Extended Abstracts of the 2nd Asian Meeting on Electroceramics",,,"No. 1A12","pp. 19",2001,
"Te-Wei Chiu,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation of Tungsten Bronze Type Ferroelectric Ba<sub>0.75</sub>Y<sub>0.166</sub>Nb<sub>2</sub>O<sub>6</sub> Thin Films by RF Magnetron Sputtering with LaNiO3 Bottom Electrodes",,"Extended Abstracts of the 2nd Asian Meeting on Electroceramics",,,"No. 1A17","pp. 23",2001,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","in-situ TEMによるPZT薄膜のドメイン構造形成過程の解明",,"日本セラミックス協会電子材料部会第21回電子材料研究討論会講演予稿集",,,"No. 2PB-06","pp. 81",2001,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO<sub>2</sub>/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/ Semiconductor Structure",,,,"Vol. 40","No. 1","pp. 281-284",2001,
"Jui-Kai Wang,Naoki Wakiya,Nobuyasu Mizutani,Kazuo Shinozaki","Phase Transformation and Densification Behavior of La-Modified Lead Metaniobate Ceramics",,"J. Ceram. Soc. Japan",,"Vol. 109","No. 2","pp. 89-93",2001,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani,Xi Yao","Improved electrical properties of (Pb, La)TiO<sub>3</sub> thin films using compositionally and structurally compatible LaNiO<sub>3</sub> thin films as bottom electrodes",,"Applied Physics Letters",,"Vol. 78","No. 21","pp. 3286-3288",2001,
"Hirokazu Ishigaki,Tomoaki Yamada,Naoki Wakiya,Nobuyasu Mizutani,Kazuo Shinozaki","Effect of the Thickness of SiO<sub>2</sub> under Layer on the Initial Stage of Epitaxial Growth Process of Yttria-Stabilized Zirconia (YSZ) Thin Film Deposited on Si(001) Substrate",,"J. Ceram. Soc. Japan",,"Vol. 109","No. 9","pp. 766-770",2001,
"G.J.Zhang,H.Xiong,J.Y.Zheng,Y.Q.Jia,Y.Xuan,Nobuyasu Mizutani","Relative content of the Cr<sup>4+</sup>ion and electrical conductivity of La<sub>0.75</sub>Ca<sub>0.25</sub>Cr<sub>0.75</sub>Fe<sub>0.25</sub>O<sub>3</sub>",,"Materials Chemistry and Physics",,"Vol. 71",,"pp. 84-89",2001,
"Chun-Hua Chen,Naoki Wakiya,Astushi Saiki,Takanori Kiguchi,Kazuo Shinozaki,Nobuyasu Mizutani","Defects in heteroepitaxial CeO<sub>2</sub>/YSZ/Si(001) films by precise X-ray rocking curve distribution fitness",,"Physica B",,"Vol. 308-310",,"pp. 1050-1053",2001,
"水谷惟恭,玄 一,包 定華,篠崎和夫,脇谷尚樹","セラミックインテグレーション用PZT薄膜の表面組成制御による誘電特性の向上",,"日本セラミックス協会第39回セラミックス基礎科学討論会講演要旨集",,,,,2001,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","非晶質YSZ層によるYSZ/SiO<sub>x</sub>/Siエピタキシャル薄膜のC-V特性の向上と可能性",,"インテリジェント材料シンポジウム",,,,,2001,
"邸 徳威,脇谷尚樹,篠崎和夫,水谷惟恭","LaNiO<sub>3</sub> 電極を用いたRFマグネトロンスパッタリング法によるBa-Y-N-Oタングステンブロンズ薄膜の構造及び強誘電特性",,"日本セラミックス協会2001年年会講演予稿集","日本セラミックス協会2001年年会講演予稿集",,,,2001,
"石垣寛和,山田智明,脇谷尚樹,篠崎和夫,水谷惟恭","Si(001)基板上に低温成膜した極薄YSZ膜の膜質に及ぼす成膜温度とSiO<sub>2</sub>層の影響",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"光永英二,木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","強酸化N<sub>2</sub>0雰囲気でのPbTiO<sub>3</sub>薄膜の組成とリーク特性",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"山田智明,石垣寛和,脇谷尚樹,篠崎和夫,水谷惟恭","CeO<sub>2</sub> (100)上 SrTiO<sub>3</sub>堆積初期過程における表面格子構造の観察とシミュレーション",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"石田陽平,玄 一,脇谷尚樹,篠崎和夫,水谷惟恭","PT薄膜の配向へのPbTi0<sub>3</sub>バッファ層の役割",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"玄 一,石岡陽平,脇谷尚樹,篠崎和夫,水谷惟恭","Pt基板上へのPbTiO<sub>3</sub>, Pb(Zr,Ti)O<sub>3</sub>薄膜の初期成長の観察",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"Chun-Hua Chen,Naoki Wakiya. Atsushi Saiki,Kazuo Shinozaki,Nobuyasu Mizutani","Effects of residual stress on mosaic dispersions of nano-heteroepitaxial CeOfYSZ/Si (OO I ) films by high resolution X-ray diffraction",,"Annual Meeting of The Ceramic Society of Japan, 2001",,,,,2001,
"佐伯 淳,篠崎和夫,水谷惟恭","薄膜の基板による配向方位微細変動の理解のための空間的配向方位測定法",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"Dinghua Bao,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Structural and electrical characterization of La-doped and Nb-doped BaTiO<sub>3</sub> thin films derived by a chemical solution deposition method",,"Annual Meeting of The Ceramic Society of Japan, 2001",,,,,2001,
"長瀬智美,大家利彦,笠石修司,棋閏洋二,水谷惟恭","ゾルゲル前駆体へのエキシマレーザ照射誘起による酸化亜鉛緑色発光薄膜の新規合成法",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"守屋智彦,脇谷尚樹,篠崎和夫,水谷惟恭","反応性スパッタリング法によるSi上への窒化物薄膜のエピタキシャル成長実現化",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"杉浦充典,水戸 厚,永野犬介,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法による半導性Nb添加SrTiO<sub>3</sub>薄膜のバリスタ特性の実現",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"脇谷尚樹,篠崎和夫,水谷惟恭","PT/フェライト積層薄膜による強誘電性･強磁性相乗効果",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","SiO<sub>x</sub>自然酸化膜によるYSZ/Si薄膜の結晶化促進現象のTM観察",,"日本セラミックス協会2001年年会講演予稿集",,,,,2001,
"水谷惟恭,篠崎和夫,脇谷尚樹","薄膜物性に及ぼすバッファーレイヤーの影響",,"電気化学会大会",,,,,2001,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Lowering of Crystallization Temperature and Improvement of Ferroelectric Properties of Pb(Zr,Ti)O<sub>3</sub> Thin Film by Introducing SrTiO3 Seed Layer",,"1st International Meeting on Ferroelectric Random Access Memories (FeRAM2001), Extended Abstracts of FeRAM2001",,,"No. P09","pp. 95-96",2001,
"Kazuo Shinozaki,Keisuke Fujito,Ayanori Endo,Naoki Wakiya,Nobuyasu Mizutani","Controlling the Residual Stresses in PZT Thin Film by Introducing Different Buffer Layers",,"1st International Meeting on Ferroelectric Random Access Memories (FeRAM2001), Extended Abstracts of FeRAM2001",,,"No. P10","pp. 97-98",2001,
"Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","HRTEM analysis of PZT thin film structure",,"1st International Meeting on Ferroelectric Random Access Memories (FeRAM2001), Extended Abstracts of FeRAM2001",,,"No. P29","pp. 134-135",2001,
"横村伸緒,木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","SiO2パターニングによるPZT薄膜の選択的結晶化",,"平成11年度科学技術振興調整費｢協奏反応場の増幅制御を利用した新材料創製に関する研究｣",,,,,2000,
"水谷惟恭","アウトカムズ評価の可視化モデル",,"工学教育プログラム北陸信越地区講演会",,,,"pp. 21-27",2000,
"山田智明,脇谷尚樹,篠崎和夫,水谷惟恭","MIFIS構造におけるエピタキシャルCeO/YSZバッファー層の結晶構造と電気的特性に及ぼすYSZ膜厚の影響",,"第17回強誘電体応用会議",,,"No. 27-T-44","pp. 205-206",2000,
"水谷惟恭","セラミックスの将来展望一温故知新, そして大いなる発想転換を一",,"セラミックプロセシング2000",,,,,2000,
"Hiroshi Uchida,Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effect of the Residual Stress Induced by External Stress Application on Dielectric Properties of Epitaxial Lead Titanate Film",,"J.Ceram. Soc. Japan",,"Vol. 108","No. 1","pp. 21-25",2000,
"Naoki Wakiya,Sung-Yong Chun,Kazuo Shinozaki,Nobuyasu Mizutani","Redox Reaction of Praseodymium Oxide in the ZnO Sintered Ceramics",,"J. Solid State Chemistry",,"Vol. 149",,"pp. 349-353",2000,
"Jui-Kai Wang,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Structural and Ferroelectric Properties of (1-X)Ba3.75Y0.83Nb10O30-XBa3.75Sm0.83Nb10O30 Solid Solutions",,"J. Ceram. Soc. Japan",,"Vol. 108","No. 1","pp. 36-39",2000,
"Naoki Wakiya,Ju-Kai Wang,Kazuo Shinozaki,Nobuyasu Mizutani","Formation Condition and Ferroelectric Properties of Niobate Tetragonal Tungsten Bronze (TTB) Type Ferroelectrics",,"The Korean Journal of Ceramics",,"Vol. 6","No. 4","pp. 380-384",2000,
"Hiroshi Uchida,Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Stress Determination in Epitaxial Lead Titanate Films by Asymmetric X-ray Diffraction Method",,"The Korean Jouranal of Ceramics",,"Vol. 6","No. 4","pp. 385-389",2000,
"Naoki Wakiya,Makoto Yoshida,Tomoaki Yamada,Takanori Kiguchi,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation and Structure of Epitaxial CeO2/YSZ/Si Buffer Layer",,"Grain Boundary Engineering in Ceramics",,,,"pp. 483-490",2000,
"脇谷尚樹,篠崎和夫,水谷惟恭","バッファー層を用いたSi(001)上へのヘテロエピタキシャル成長フェライト薄膜の合成",,"第13回秋季シンポジウム講演予稿集",,,"No. 3A14","pp. 203",2000,
"K.Shinozaki,A.Endo,A.Iwasaki,A.Saiki,N.Wakiya,N.Mizutani","Controlling the Residual Stresses in PZT Thin Film by Introducing Different Buffer Layers.",,"Extended Abstracts of the 1st Asian Meeting on Electroceramics",,,"No. 2PA03","pp. 49",2000,
"M.Higuchi,M.-Y.Park,N.Wakiya,K.Shinozaki,N.Mizutani","Effect of Ti Source on Preparation of Pb-based Oxide Thin Films using LSCVD.",,"Extended Abstracts of the 1st Asian Meeting on Electroceramics",,,"No. 2PA01","pp. 47",2000,
"C-H.Chen,N.Wakiya,K.Shinozaki,N.Mizutani","Effect of Deposition Temperature on Structure of Epitaxial LSCO/CeO2/YSZ/Si(001) Films by High-resolution X-ray Diffraction.",,"Extended Abstracts of the 1st Asian Meeting on Electroceramics",,,"No. 2A07","pp. 37",2000,
"D.Bao,N.Mizutani,X.Yao,L.Zhang","Efects of Buffer Layer on Electrical Properties of Pb(Zr,Ti)O3 Thin Films Derived by Metalorganic Decomposition.",,"Extended Abstracts of the 1st Asian Meeting on Electroceramics",,,"No. 2A05","pp. 35",2000,
"Y.Xuan,N.Wakiya,K.Shinozaki,N.Mizutani,M.Tsukada,N.Kamehara","Effects of the Surface Compositions on Electrical Properties of Pb(Zr,Ti)O3 Films",,"Extended Abstracts of the 1st Asian Meeting on Electroceramics",,,"No. 2A03","pp. 33",2000,
"N.Wakiya,K.Shinozaki,N.Mizutani","Preparation and Magnetic Properties of Hetroepitaxial NiFe2O4/MgAl2O4/CeO2/YSZ/Si(001) Thin Film",,"Extended Abstracts of the 1st Asian Meeting on Electroceramics",,,"No. 1A05","pp. 15",2000,
"Nobuyasu Mizutani,Naoki Wakiya,Makoto Yoshida Kenichi Hijikata,Kazuo Shinozaki","PREPARATION OF EPITAXIAL YSZ THIN FILM ON Si(001) USING METAL AND OXIDE TARGETS BY RF-MAGNETRON SPUTTERING",,"3rd Asian Meeting on Ferroelectrics",,,"No. D3p.66",,2000,
"Naoki Wakiya,Kazumasa Kuroyanagi,Yi Xuan,Kazuo Shinozaki,Nobuyasu Mizutani","An XPS study of the nucleation and growth behavior of an epitaxial Pb(Zr,Ti)O3/MgO(100) thin film prepared by MOCVD",,"Thin Solid Films",,"Vol. 372",,"pp. 156-162",2000,
"Naoki Wakiya,Tomoaki Yamada,Kazuo Shinozaki,Nobuyasu Mizutani","Heteroepitaxial growth of CeO2 thin film on Si(001) with an ultra thin YSZ buffer layer",,"Thin Solid Films",,"Vol. 371",,"pp. 211-217",2000,
"Hiroshi Funakubo,Kuniharu Nagashima,Kazuo Shinozaki,Nobuyasu Mizutani","Comparison of deposition behavior of Pb(Zr,Ti)O3 films and its end-member-oxide films prepared by MOCVD",,"Thin Solid Films",,"Vol. 368",,"pp. 261-265",2000,
"Tomokazu Matsuzaki,Norikazu Okuda,Kazuo Shinozaki,Nobuyasu Mizutani,Hiroshi Funakubo","Composition Control of YSZ Thin Film Prepared by MOCVD",,"The Korean Journal of Ceramics",,"Vol. 6","No. 2","pp. 134-137",2000,
"Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Structure Analysis of CeO2/ZrO2/Si Multilayer Thin Films by HRTEM",,"Mat. Res.Soc. symp. Proc.",,"Vol. 592",,"pp. 183-188",2000,
"A.Endo,A.Iwasaki,N.Wakiya,A.Saiki,K.Shinozaki,N.Mizutani","EPreparation and Properties of PbTiO3-PbZrO3 Thin Films by Pulsed MO-Source CVD Method",,"Key Engineering Materials (Electroceramics in Japan III)",,"Vol. 181-182",,"pp. 77-80",2000,
"J.-Kai Wang,N.Wakiya,K.Shinozaki,N.Mizutani","Effect of Ionic Radii on Formation and Properties of (M2+1-xLn3+2x/3)5Nb10O30 (M=Sr,Pb,Ba, Ln=Rare Earth) New Ferroelectric Compounds Having Tungsten Bronze Structure.",,"Key Engineering Materials (Electroceramics in Japan III)",,"Vol. 181-182",,"pp. 31-34",2000,
"C.-Hua Chen,N.Wakiya,A.Saiki,K.Shinozaki,N.Mizutani","Thickness and Roughness Analysis on YSZ/Si(001) Epitaxial Films with Ultra Thin SiO2 Interface by X-Ray Reflectivity",,"Key Engineering Materials (Electroceramics in Japan III)",,"Vol. 181-182",,"pp. 121-124",2000,
"Hiroshi Uchida,Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effect of the Residual Stress Induced by External Stress Application on Dielectric Properties of Epitaxial Lead Titanate Film",,"J.Ceram. Soc. Japan",,"Vol. 108","No. 1","pp. 21-25",2000,
"Naoki Wakiya,Sung-Yong Chun,Kazuo Shinozaki,Nobuyasu Mizutani","Redox Reaction of Praseodymium Oxide in the ZnO Sintered Ceramics",,"J. Solid State Chemistry",,"Vol. 149",,"pp. 349-353",2000,
"Sung-Yong Chun,Kazuo Shinozaki,Nobuyasu Mizutani","Electrically active grain boundaries in ZnO varistors by liquid-infiltration method",,"J. of Materials Science: Materials in Electronics II",,,"No. 11","pp. 73-80",2000,
"Chun-Hua Chen,Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Influence of ultra-thin YSZ layer on heteroepitaxial CeO2/YSZ/Si(001) films analyzed by X-ray reciprocal space map",,"J. of Crystal Growth",,"Vol. 219",,"pp. 253-262",2000,
"Jui-Kai Wang,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Morphotropic Phase Boundary (MPB)of Tungsten Bronze Type New Compounds (Pb1-xLa2x/3)5Nb1OO 30(X=0.0-0.50)",,"J. Ceram. Soc. Japan",,"Vol. 108","No. 9","pp. 785-789",2000,
"Tomoaki Yamada,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Effect of Oxygen Partial Pressure and Laser Energy Density on the Heteroepitaxial Growth of YSZ on Si(001) by Pulsed Laser Deposition",,"J. Ceram. Soc. Japan",,"Vol. 108","No. 8","pp. 777-779",2000,
"松嶋雄太,石澤伸夫,脇谷尚樹,水谷惟恭","単結晶Ｘ線回折及びEXAFSによるPbZn1/3Nb2/3O3の構造研究",,"日本セラミックス協会学術論文誌",,"Vol. 108","No. 7","pp. 617-622",2000,
"Jui-Kai Wang,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Structural and Ferroelectric Properties of (1-X)Ba3.75Y0.83Nb10O30-XBa3.75Sm0.83Nb10O30 Solid Solutions",,"J. Ceram. Soc. Japan",,"Vol. 108","No. 1","pp. 36-39",2000,
"Dinghua Bao,Nobuyasu Mizutani,Xi Yao,Liangying Zhang","Dielectric and ferroelectric properties of compositionally graded (Pb, La)TiO3 thin films on Pt/Ti/SiO2/Si substrates",,"Applied Physics Letters",,"Vol. 77","No. 8","pp. 1203-1206",2000,
"Dinghua Bao,Nobuyasu Mizutani,Xi Yao,Liangying Zhang","Structural, dielectric,and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes",,"Applied Physics Letters",,"Vol. 77","No. 7","pp. 1041-1043",2000,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","PROPOSAL AND PREPARATION OF NOVEL FLUORITE/SPINEL HETEROEPITAXIAL DOUBLE BUFFER LAYER STRUCTURE ON Si(001) FOR FET-TYPE FRAM APPLICATION",,"3rd Asian Meeting on Ferroelectrics",,,"No. C2d.3",,2000,
"Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Resistivity and Crystal Structural Characteristics of Heteroepitaxial La0.5Sr0.5CoO3(LSCO)/CeO2/YSZ/Si(001) Thin Film",,"The 1st Asian Conference on Crystal Growth and Crystal Technology",,,"No. T-A-08",,2000,
"光永英二,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法によるストイキオメトリーPbTiO3薄膜のリーク特性に及ぼす強酸化性N2Oガスの影響",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A02","pp. 3",2000,
"木口賢紀,佐伯 淳,脇谷尚樹,篠崎和夫,水谷惟恭","TEM,XRDによるPMN/LSCO/CeO2/YSZ/Si薄膜のインテグレート構造と誘電率の膜厚依存性",,"第13回秋季シンポジウム講演予稿集",,,"No. 3A15","pp. 204",2000,
"永野大介,杉浦充典,脇谷尚樹,舟窪 浩,篠崎和夫,水谷惟恭","ドーピングMOCVDによるLa, Nb添加BaTiO3薄膜の導電機構",,"第20回電子材料研究討論会",,,"No. 1B06","pp. 82",2000,
"篠崎和夫,横村伸緒,伊藤拓義,木口賢紀,脇谷尚樹,水谷惟恭","MOD法によりシード層を導入し結晶性/配向性を制御したPZT,PT薄膜の合成",,"第20回電子材料研究討論会",,,"No. 1B10","pp. 86",2000,
"木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","YSZ/Si薄膜界面へのSiOx層生成過程のTEMによるその場観察",,"第20回電子材料研究討論会",,,"No. 2PB23","pp. 127",2000,
"杉浦充典,永野大介,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD合成したSrTiO3薄膜の構成相に及ぼす基板種の影響",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A01","pp. 1-2",2000,
"岩崎彰則,遠藤文徳,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法によるPbTiO3およびPbZrO3薄膜の析出挙動に及ぼす気相組成の影響",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A03","pp. 4-5",2000,
"横村伸緒,伊藤拓義,脇谷尚樹,篠崎和夫,水谷惟恭","フォトリソグラフィ技術によるPt/Si基板上への選択結晶成長PZT薄膜の合成とその電気特性",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A05","pp. 8-9",2000,
"山田智明,石垣寛和,脇谷尚樹,篠崎和夫,水谷惟恭","SrnTiOn+2極薄層によるCeO2/YSZ/Si上SrTiO3薄膜のエピタキシャル成長実現化",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A06","pp. 10-11",2000,
"守屋智彦,脇谷尚樹,土方研一,篠崎和夫,水谷惟恭","RFマグネトロンスパッタリング法によるCeO2/Siバッファー層の合成",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A07","pp. 12-13",2000,
"杉浦充典,永野大介,脇谷尚樹,篠崎和夫,水谷惟恭","Si基板上へのPLD法YSZ薄膜の初期成長過程における1nm前後SiO2膜の影響",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A08","pp. 14-15",2000,
"Chun-Hua Chen,N.Wakiya,A.Saiki,K.Shinozaki,N.Mizutani","Relationship between YSZ Thickness and Dislocation Densities of Both YSZ and CeO2 Layers in Heteroepitaxial CeO2/YSZ/Si(001) Films Determined by Precise X-ray Rocking Curves Fitness.",,"16 th Ceramic Research Conference of Kanto Branch",,,"No. 1A09","pp. 74-75",2000,
"K.Shinozaki,A.Endo,A.Iwasaki,A.Saiki,N.Wakiya,N.Mizutani","Preparation of PZT Thin Film with Compositionally Gradient Buffer Layer by Pulsed MO-Source CVD",,"The 102nd Annual Meeting of the American Ceramic Society",,,"No. A2P-003-00","pp. 8",2000,
"K.Shinozaki,M.Kondo,L.Bergstrom,N.Mizutani","Formation Model of Two-Dimensional Colloidal Monolayer of Silica Particles",,"The 102nd Annual Meeting of the American Ceramic Society",,,"No. BS3P-013-00","pp. 266",2000,
"木口賢紀,内田 寛,脇谷尚樹,篠崎和夫,水谷惟恭","HRTEM観察によるPbTiO3/SrTiO3薄膜の高整合性界面の構造",,"日本セラミックス協会2000年年会",,,"No. 1E02","pp. 46",2000,
"佐伯 淳,篠崎和夫,水谷惟恭","応力を印加して成膜したジルコニア薄膜における配向方位分布と残留歪",,"日本セラミックス協会2000年年会",,,"No. 2D33","pp. 181",2000,
"内田 寛,木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVDによるチタン酸鉛薄膜の成膜過程における残留応力発生の機構",,"日本セラミックス協会2000年年会",,,"No. 2D35","pp. 182",2000,
"遠藤文徳,岩崎彰則,脇谷尚樹,篠崎和夫,水谷惟恭","PT-PZ系バッファー層導入によるPZT薄膜内の残留応力の制御",,"日本セラミックス協会2000年年会",,,"No. 2E29","pp. 196",2000,
"玄 一,石田陽平,脇谷尚樹,篠崎和夫,水谷惟恭","PbTiO3薄膜の成長様式に及ぼすLaAlO3基板の表面処理の影響",,"日本セラミックス協会2000年年会",,,"No. 2E30","pp. 197",2000,
"樋口昌史,朴 萬栄,脇谷尚樹,篠崎和夫,水谷惟恭","ミスト供給した溶液気化化学気相堆積法(LSMCVD)を用いたPb系強誘電体薄膜の作成  ",,"日本セラミックス協会2000年年会",,,"No. 2E33","pp. 198",2000,
"脇谷尚樹,篠崎和夫,水谷惟恭","PLD法によるPMN/LSCO/CeO2/YSZ/Si(001)ヘテロエピタキシャル薄膜の合成と誘電特性",,"日本セラミックス協会2000年年会",,,"No. 2E34","pp. 199",2000,
"吉田 慎,守屋智彦,脇谷尚樹,篠崎和夫,水谷惟恭,土方研一","RFマグネトロンスパッタ法によるCeO2/YSZ/Si(001)ヘテロエピタキシャル薄膜の合成と電気的性質",,"日本セラミックス協会2000年年会",,,"No. 2E35","pp. 199",2000,
"朝岡一郎,桜井 修,篠崎和夫,水谷惟恭","TSCを用いて測定した相転移点及び脱電流量と(Ba, Sr)TiO3固溶体の組成比の関係",,"日本セラミックス協会2000年年会",,,"No. 2E37","pp. 200",2000,
"永野大介,杉浦充典,木口 賢紀,脇谷尚樹,舟窪 浩,篠崎和夫,水谷惟恭","MOCVD合成した半導性NbドープBaTiO3薄膜のNb添加状態と導電機構",,"日本セラミックス協会2000年年会",,,"No. 2F09","pp. 205",2000,
"松嶋雄太,石澤伸夫,脇谷尚樹,水谷惟恭","Structural Study of PbZn1/3Nb2/3O3using EXAFS and Single Crystal X-ray Diffraction Techniques",,"Annual Meeting of The Ceramic Society of Japan, 2000",,,"No. 2K27","pp. 284",2000,
"水谷惟恭","フロンティアセラミックスが拓く新世紀",,"工学調査会","工学調査会",,,,2000,
"Dinghua Bao,Nobuyasu Mizutani,Xi Yao,Liangying Zhang","Structural, dielectric,and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes",,"Applied Physics Letters",,"Vol. 77","No. 7","pp. 1041-1043",2000,
"Dinghua Bao,Nobuyasu Mizutani,Xi Yao,Liangying Zhang","Dielectric and ferroelectric properties of compositionally graded (Pb, La)TiO3 thin films on Pt/Ti/SiO2/Si substrates",,"Applied Physics Letters",,"Vol. 77","No. 8","pp. 1203-1206",2000,
"Naoki Wakiya,Ju-Kai Wang,Kazuo Shinozaki,Nobuyasu Mizutani","Formation Condition and Ferroelectric Properties of Niobate Tetragonal Tungsten Bronze (TTB) Type Ferroelectrics",,"The Korean Journal of Ceramics",,"Vol. 6","No. 4","pp. 380-384",2000,
"Hiroshi Uchida,Takanori Kiguchi,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani","Stress Determination in Epitaxial Lead Titanate Films by Asymmetric X-ray Diffraction Method",,"The Korean Jouranal of Ceramics",,"Vol. 6","No. 4","pp. 385-389",2000,
"Naoki Wakiya,Makoto Yoshida,Tomoaki Yamada,Takanori Kiguchi,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation and Structure of Epitaxial CeO2/YSZ/Si Buffer Layer",,"Grain Boundary Engineering in Ceramics",,,,"pp. 483-490",2000,
"石田陽平,玄 一,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法によるPZT薄膜構造の成長様式と成膜速度の関係",,"日本セラミックス協会第16回関東支部研究発表会",,,"No. 1A04","pp. 6-7",2000,
"水谷惟恭","薄膜系フロンティアセラミックスプロセッシング",,"フロンティアセラミックスが拓く新世紀",,,,"pp. 93-116",2000,
"水谷惟恭","アウトカムズ評価の可視化モデル",,"工学教育プログラム東海地区講演会",,,"No. 3","pp. 13-17",2000,
"J.-K. Wang,N. Wakiya,O. Sakurai,K. Shinozaki,N. Mizutani","Ferroelectric and Structural Properties of Tungsten Bronze System Ba<sub>1-x</sub>Ln<sub>2x/3</sub>Nb<sub>2</sub>O<sub>6</sub> (Ln=La~Er,Y)",,"Key Engineering Materials",,"Vol. 169-170",,"pp. 3-6",1999,July
"C.H.Lee,S.-Y. Chun,N. Wakiya,K. Shinozaki,N. Mizutani","Microstructural changes by Pr Addition Near Eutectic Temperature in ZnO-PrOx System",,"Key Engineering Materials","Trans Tech Publications","Vol. 157-158",,"pp. 257-266",1999,July
"大場陽子,櫻井修,大橋直樹,水谷惟恭","BaTiO<sub>3</sub>セラミックスを教材にした学生実験の手法",,"日本セラミックス協会1999年年会講演予稿集",,,,"pp. 121",1999,Mar.
"内田 寛,佐伯 淳,脇谷尚樹,篠崎和夫,水谷惟恭","チタン酸鉛薄膜の誘電特性に及ぼす外部応力印加の影響",,"第15回日本セラミックス協会関東支部研究発表会",,,"No. 1A03","pp. 5-6",1999,
"杉浦充典,永野大介,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法による(Ba, Sr)TiO3薄膜の新規合成法の開発",,"第15回日本セラミックス協会関東支部研究発表会",,,"No. 1A04","pp. 7-8",1999,
"玄 一,脇谷尚樹,篠崎和夫,水谷惟恭","MOCVD法によるPbTiO3薄膜の成長様式",,"第15回日本セラミックス協会関東支部研究発表会",,,"No. 1A14","pp. 27",1999,
"Kazuo Shinozaki,Chih-Hsiu Yeh,Naoki Wakiya,Hiroshi Funakubo,Nobuyasu Mizutani","Preparation and Semiconductive Properties of La-doped BaTiO3 Films Fabricated by RF Magnetron Sputtering",,"9th US-Japan Seminar on Dielectric and Piezoelectric Ceramics",,,"No. V-1","pp. 397-400",1999,
"Yuta Matsushima,Nobuo Ishizawa,Naoki Wakiya,Nobuyasu Mizutani","EXAFS Study of Ferroelectric Relaxor PbZn1/3Nb2/3O3",,"The 2nd Nagano-Electronics International Symposium",,,,,1999,
"汪 睿凱,脇谷尚樹,篠崎和夫,水谷惟恭","タングステンブロンズ(M2+1-XLn3+2X/3)5Nb10O30 (M=Sr,Pb,Ba, Ln=rare earth)新グループ強誘電体化合物の形成と性質に及ぼすイオン半径と分極率の影響",,"第19回電子材料研究討論会",,,"No. 1A02","pp. 34",1999,
"K. Shinozaki,N. Mizutani","Role of the Liquid Phase Formed in AlN-Y2O3 System",,"The 4th CISEM-DIM Joint Seminar",,,,"pp. 121-131",1999,
"Y. Xuan,N. Wakiya,K. Shinozaki,N. Mizutani","Initial Growth of Lead-based Ferroelectric Thin Films by MOCVD",,"The 4th CISEM-DIM Joint Seminar",,,,"pp. 27-33",1999,
"T. Yamada,N. Wakiya,K. Shinozaki,N. Mizutani","The effects of Oxygen Partial Pressure and Laser Influence on the Growth of Heteroepitaxial YSZ on Si(100) Using Pulsed Laser Deposition",,"The 4th CISEM-DIM Joint Seminar",,,,"pp. 67-73",1999,
"H. Funakubo,K. Nagashima,K. Shinozaki,N. Mizutani","Comparison of Deposition Bahavior of Pb(Zr,Ti)O3 Films and its End-member-oxide Films Prepared by MOCVD",,"Asian Conference on Chemical Vapor Deposition",,,,,1999,
"Osamu Sakurai,Naoki Wakiya,Masashi Higuchi,Kazuo Shinozaki,Nobuyasu Mizutani","Preparation and Properties of Monodispersed Particles and Thin Films of Electroceramics by Mist Source CVD Process",,"HY-TITech Joint Symposium on Advanced Materials",,,,"pp. 1-18",1999,
"峰村 崇,木口賢紀,脇谷尚樹,篠崎和夫,水谷惟恭","環境制御型SEMを用いたチタン酸鉛薄膜の結晶化に伴う微構造変化のその場観察",,"第15回日本セラミックス協会関東支部研究発表会",,,"No. 1A15","pp. 29-30",1999,
"吉田 慎,山田智明,脇谷尚樹,土方研一,篠崎和夫,水谷惟恭","金属および酸化物ターゲットを用いたエピタキシャルYSZ/Siマグネトロンスパッタ膜の構造と電気特性",,"第15回日本セラミックス協会関東支部研究発表会",,,"No. 1A19","pp. 37-38",1999,