"Y. Miyamoto,N. Nishiyama,S. Suzuki","Electron beam lithography in processes for electron/opto/teraherz devices","35th International Microprocesses and Nanotechnology Conference",,,,,,2023,Nov.
"J. Kotani,K. Makiyama,T. Ohki,S. Ozaki,N. Okamoto,Y. Minoura,M. Sato,N. Nakamura,Y. Miyamoto","High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers",,"ELECTRON. LETT.",,"vol. 59","no. 4"," e12715",2023,Feb.
"Y. Ito,S. Tamai,T. Hoshi,T. Gotow,Y. Miyamoto","Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers",,"JPN. J. APPL. PHYS.",,"vol. 62","no. SC"," SC1048",2023,Feb.
"K. Makiyama,S. Yoshida,K. Nakata,Y. Miyamoto","Innovative RF Device Technologies for Advanced Information and Communications Network Society","IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium",,,,,,2022,Oct.
"Y. Ito,S. Tamai,T. Hoshi,Y. Miyamoto","GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers","2022 International Conference on Solid State Devices and Materials",,,,,,2022,Sept.
"Y. Miyamoto,K. Makiyama","Lateral thickness change of the high-k film on GaN HEMT for uniform electric field","14th Topical Workshop on Heterostructure Microelectronics, (TWHM 2022)",,,,,,2022,Aug.
"T. Gotow,T. Arai,T. Aota,Y. Miyamoto","Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs","Compound Semiconductor Week",,,,,,2022,June
"宮本恭幸,後藤高寛","GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算",,"電気学会論文誌C","電気学会","Vol. 142","No. 3","pp. 348-353",2022,Mar.
"新井貴大,青田智也,眞壁勇夫,中田健,後藤高寛,宮本恭幸","N極性GaN HEMTのTMAHによる素子分離","第69回応用物理学会春季学術講演会",,,,,,2022,Mar.
"Tomimasa Go,M. Kitamura,T. Gotow,Y. Miyamoto","PMA Evaluation of TiN ALD in InGaAs Nanosheet MOSFETs","International Microprocesses and Nanotechnology Conference",,,,,,2021,Oct.
"T. Gotow,Tatsushi Suka,Y. Miyamoto","Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"後藤高寛,須賀達士,宮本恭幸","N極性およびGa極性GaN MIS構造の界面特性の比較検討","第82回応用物理学会秋季学術講演会",,,,,,2021,Sept.
"Y. Miyamoto,T. Gotow","Proposal of breakdown voltage control of GaN HEMT by interface charge","Compound Semiconductor Week 2021",,,,,,2021,May
"宮本恭幸,後藤高寛","界面電荷量によるGaN HEMTの耐圧制御の提案","電子デバイス研究会",,,,,,2021,Mar.
"T. Aota,A. Hayasaka,I. Makabe,S. Yoshida,T. Gotow,Y. Miyamoto","Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction",,"Japanese Journal of Applied Physics",," 60"," SCCF06",,2021,Mar.
"Tomoya Aota,Akihiro Hayasaka,isao makabe,Shigeki Yoshida,Takahiro Gotow,YASUYUKI MIYAMOTO","Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction","33rd International Microprocesses and Nanotechnology Conference (MNC 2020)",,,,,,2020,Nov.
"Moataz Eissa,Takuya Mitarai,Tomohiro Amemiya,Yasuyuki Miyamoto,Nobuhiko Nishiyama","Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction",,"Japanese Journal of Applied Physics","IOP publishing","Volume 59","Number 12","p. 126502",2020,Nov.
"青田 智也,早坂 明泰,眞壁 勇夫,吉田 成輝,後藤 高寛,宮本 恭幸","N極性GaN HEMT構造での無電極PECエッチング","第81回 応用物理学会秋季学術講演会",,,,,,2020,Sept.
"Yasuyuki Miyamoto,Takahiro Gotow","Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer",,"IEICE Transactions on Electronics",,"Vol. 103.C",,"Page 304-307",2020,June
"毛利 匡裕,早坂 明泰,眞壁 勇夫,吉田 成輝,後藤 高寛,宮本 恭幸","N極性GaN HEMT構造におけるコンタクト抵抗の低減","第67回 応用物理学会 春季学術講演会",,,,," 12p-B401-12",2020,Mar.
"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs",,"Jpn. J. Appl. Phys.",,,," 59, SGGA06 (2020)",2020,Feb.
"Moataz Eissa,Takuya Mitarai,Tomohiro Amemiya,Nobuhiko Nishiyama,Yasuyuki Miyamoto","Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction","32nd International Microprocesses and Nanotechnology Conference (MNC 2019)",,,,,,2019,Oct.
"早坂 明泰,青沼 遼介,堀田 航史,金井 七重,眞壁 勇夫,吉田 成輝,宮本 恭幸","N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減","第80回 応用物理学会 秋季学術講演会",,,,," 18p-N302-11",2019,Sept.
"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for double gate hetero tunnel FETs","2019 International Conference on Solid State Devices and Materials(SSDM 2019)",,,,," PS-1-21(LN),",2019,Sept.
"Y. Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,K. Ohsawa","Regrown Source/Drain in InGaAs Multi-Gate MOSFETs",,"J. Crystal Growth",,"vol. 522",," （2019）11-15",2019,Sept.
"MOATAZ Shaher Anis Mahmoud Eissa,御手洗 拓矢,雨宮 智宏,西山 伸彦,宮本 恭幸","Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"M.Kitamura,T.Kanazawa,Y.Miyamoto","Evaluation of fabricationmethod of InGaAs nanosheet","13rd th Topical Workshop onHeterostructure Microelectronics, (TWHM 2019)",,,,," 6-6",2019,Aug.
"Tomohiro Amemiya,Tomoya Yoshida,Yuki Atsumi,Yasuyuki Miyamoto,Yoichi Sakakibara,Shigehisa Arai","Si-based Orbital Angular Momentum Mux/Demux Module","IEEE International Nanoelectronics Conference (INEC 2019)",,,,,,2019,July
"Y. Miyamoto","Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer","Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019)",,,,," B7-4",2019,July
"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure",,"Jpn. J. Appl. Phys",," 58, (2019)"," SC"," SCCD14",2019,May
"A. Hayasaka,R. Aonuma,K. Hotta,I. Makabe,S. Yoshida,Y. Miyamoto","N-polar GaN HEMT with Al2O3 gate insulator","Compound Semiconductor Week 2019",,,,," MoP-G-8 (Poster)",2019,May
"W Zhang,T. Kanazawa,Y. Miyamoto","Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment",,"Apl. Phys. Exp",,"vol. 12","no. 6"," 065005 (2019)",2019,May
"早坂 明泰,青沼 遼介,堀田 航史,眞壁 勇夫,吉田 成輝,宮本 恭幸","Al2O3ゲート絶縁膜を持つN極性GaN HEMT","第66回応用物理学会春季学術講演会",,,,," 9p-M121-13",2019,Mar.
"張 文倫,金澤 徹,北村 稔,宮本 恭幸","UV-O3表面酸化によるHfS2 MOSFETの性能改善","第66回応用物理学会春季学術講演会",,,,," 11p-W521-4",2019,Mar.
"?宮 智宏,吉? 知也,渥美 裕樹,西山 伸彦,宮本 恭幸,榊原 陽?,荒井 滋久","Siフォトニクスによる光渦MUX/DEMUXモジュール","電子情報通信学会 2018年総合大会",,,,,,2019,Mar.
"Tomohiro Amemiya,Tomoya Yoshida,Yuki Atsumi,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Yoichi Sakakibara,Shigehisa Arai","Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides","2019 Optical Fiber Communication Conference (OFC 2019)",,,,,,2019,Mar.
"R. Aonuma,N. Kise,Y. Miyamoto","GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature",,"Jpn. J. Appl. Phys.",,,," 58, SBBA08 (2019)",2019,Mar.
"北村 稔,金澤 徹,宮本 恭幸","HSQを用いたInGaAsナノシート構造作製法評価","第66回応用物理学会春季学術講演会",,,,," 11a-M121-11",2019,Mar.
"野上 直哉,福田 浩一,宮本 恭幸","量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討","第66回応用物理学会春季学術講演会",,,,," 9p-S221-4",2019,Mar.
"W Zhang,S. Netsu,T. Kanazawa,T. Amemiya,Y. Miyamoto","Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor",,"Jpn. J. Appl. Phys",," 58, SBBH02 (2019)",,,2019,Jan.
"Y. Miyamoto,N. Kise,R. Aonuma","GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters","2018 Workshop on Innovative Nanoscale Devices and Systems (WINDS)",,,,," P7",2018,Nov.
"Y. Miyamoto","Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits","4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)",,,,," ED-III-1",2018,Nov.
"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure","International Workshop on Nitride Semiconductors (IWN 2018)",,,,,,2018,Nov.
"雨宮 智宏,吉田 知也,渥美 祐樹,西山 伸彦,宮本 恭幸,榊原 陽一,荒井 滋久","Siフォトニクスによる光渦MUX/DEMUXモジュール",,"電子情報通信学会技術研究報告",," 118(252)"," 75-80",,2018,Oct.
"青沼 遼介,木瀬 信和,宮本 恭幸","Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善","第79回応用物理学会秋季学術講演会",,,,," 21p-331-7",2018,Sept.
"Y. Higa,M. Yoshida,N. Nishiyama,Y. Miyamoto,Nobuyuki Kagi","High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications","2018 IEEE International Semiconductor Laser Conference (ISLC)",,,,," WC7",2018,Sept.
"R. Aonuma,N. Kise,Y. Miyamoto","Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,," PS-1-14",2018,Sept.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,," M-7-03",2018,Sept.
"岩田 真次郎,大橋 一水,祢津 誠晃,福田 浩一,宮本 恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,," 16a-1C-6",2018,Sept.
"吉田匡廣,比嘉康貴,西山伸彦,宮本恭幸,加木信行","測距用14xx-nm Eye-safe波長帯高出力エピタキシャルスタックパルスレーザ","電子情報通信学会エレクトロニクスソサエティ大会",,,,," C-4-5",2018,Sept.
"張 文倫,祢津 誠晃,金澤 徹,雨宮 智宏,宮本 恭幸","埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET","第79回応用物理学会秋季学術講演会",,,,," 19a-212B-5",2018,Sept.
"雨宮 智宏,吉田 知也,渥美 裕樹,西山 伸彦,宮本 恭幸,榊原 陽一,荒井 滋久","Si湾曲カプラを用いた光渦MUX/DEMUXモジュール","第79回応用物理学会秋季学術講演会",,,,," 18p-212A-10",2018,Sept.
"堀田 航史,富塚 ゆみ子,板垣 光祐,眞壁 勇夫,吉田 成輝,宮本 恭幸","N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性","第79回応用物理学会秋季学術講演会",,,,," 20p-331-10",2018,Sept.
"D. Nakajun,N. Kanai,R. F. T. Fathulah,H. Fujita,E. Yagyu,Y. Miyamoto","Multi-level inverter toward GaN HEMT monolithic integrated circuit","Les Eastman Conference 2018",,,,," IIIB-5",2018,Aug.
"Nanae Kanai,Kenichi Okada,Yasuyuki Miyamoto","Investigation of Active Load Matching Using GaN HEMT as Digital Switch","Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)",,,,,,2018,July
"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,," P2-32",2018,June
"YASUYUKI MIYAMOTO","The Potential of GaN HEMT on GaN Substrate","Nanotech Malaysia",,,,,,2018,May
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,," We3C3.2",2018,May
"Seiko Netsu,Toru Kanazawa,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type-II HfS2/MoS2 Heterojunction Transistors",,"IEICE Transactions on Electronics",,"Vol. E101-C","No. 5","pp. 338-342",2018,May
"木瀬 信和,青沼 遼介,宮本 恭幸","GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響","第65回応用物理学会春季学術講演会",,,,," 18p-C302-12",2018,Mar.
"國貞 彰吾,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い","第65回応用物理学会春季学術講演会",,,,," 18a-G203-7",2018,Mar.
"金澤 徹,大澤 一斗,雨宮 智宏,木瀬 信和,青沼 遼介,宮本 恭幸","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,," 18a-G203-3",,,2018,Mar.
"S. Netsu,M. Hellenbrand,C. B. Zota,Y. Miyamoto,E. Lind","A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs",,"IEEE Journal of the Electron Devices Society",,"Vol. 6"," issue. 1","pp. 408-412 (2018).",2018,Feb.
"Toru Kanazawa,Yasuyuki Miyamoto","Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide","IWPSD 2017",,,,," 2D06",2017,Dec.
"國貞 彰吾,福田 浩一,宮本 恭幸","[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"祢津 誠晃,?澤 徹,?宮 智宏,宮本 恭幸","HfS2/MoS2 ヘテロジャンクションの温度依存電流特性","第78回応用物理学会秋季学術講演会",,,,"No. 7p-C11-16",,2017,Sept.
"K. Makiyama,T. Ohki,S. Ozaki,Y. Niida,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,T. Ishiguro,K. Joshin,N. Nakamura,Y. Miyamoto","InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)","International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017 )",,,,," 30-Nitride-3",2017,Sept.
"木瀬 信和,岩田 真次郎,青沼 遼介,宮本 恭幸","[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"?澤 ??,?澤 徹,?瀬 信和,?宮 智宏,宮本 恭幸","InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発","第78回応用物理学会秋季学術講演会",,,,"No. 8a-S22-2",,2017,Sept.
"Seiko Netsu,Toru Kanazawa,Vikrant Upadhyaya,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type II HfS2/MoS2 heterojunction Tunnel FET","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"No. 6-3",,2017,Aug.
"D. Nakajun,R. F. T. Fathulah,H. Fujita,E. Yagyu,Y. Miyamoto","Multi-level inverter by GaN HEMT on semi-insulating substrate","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,," 4-4",,2017,Aug.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2",,"IEEE Transactions on Nanotechnology",,"Vol. 16","No. 4","pp. 582-587",2017,July
"宮本恭幸","ヘテロ構造電子デバイスとMOVPE/MBE (チュートリアル講演)","第9回 ナノ構造・エピタキシャル成長講演会",,,," T-Fr-1",,2017,July
"Y. Miyamoto,D. Nakajun,R. F. T. Fathulah,H. Fujita,E. Yagyu","High speed GaN HEMT for power electronics (Invited)","12th International Conference on Nitride Semiconductor (ICNS)",,,," C5.1",,2017,July
"K. Makiyama,S. Ozaki,Y. Niida,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Yoichi Kamada,K. Joshin,N. Nakamura,Yasuyuki Miyamoto","Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)","12th International Conference on Nitride Semiconductor (ICNS)",,,," C1,1",,2017,July
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,," C804",,2017,May
"Vikrant UPADHYAYA,Toru KANAZAWA,Yasuyuki MIYAMOTO","Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation",,"IEICE Transactions on Electronics",,"Vol. E100-C","No. 5","pp. 453-457",2017,May
"K. Makiyama,Y. Niida,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","GaN HEMT Device Technology for W-band Power Amplifiers (Invited)","Compound Semiconductor Week 2017",,,," A6-1",,2017,May
"祢津 誠晃,金澤 徹,Vikrant Upadhyaya,ウワンノー ティーラユット,雨宮 智宏,長汐 晃輔,宮本 恭幸","Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET","第64回応用物理学会春季学術講演会",,,,," 16a-F203-4",2017,Mar.
"大澤 一斗,野口 真司,祢津 誠晃,木瀬 信和,宮本 恭幸","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"岩田 真次郎,木瀬 信和,青沼 遼介,宮本 恭幸","[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"青沼遼介,岩田真次郎,木瀬信和,宮本恭幸","68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET","電気学会電子デバイス研究会",,,,," EDD-17-051",2017,Mar.
"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S"," 04CG05 2017",2017,Mar.
"金澤 徹,雨宮 智宏,祢津 誠晃,Vikrant Upadhyaya,福田 浩一,宮本 恭幸","HfS2系トンネルトランジスタのデバイスシミュレーション","第64回応用物理学会春季学術講演会",,,,," 16a-F203-3",2017,Mar.
"雨宮 智宏,山? 理司,金澤 徹,石川 篤,西山 伸彦,宮本 恭幸,田中 拓男,荒井 滋久","光回路とプラズモニックメタマテリアル","第37回レーザー学会年次大会",,,,"No. 07pII.7",,2017,Jan.
"大澤一斗,野口真司,祢津誠晃,木瀬信和,宮本恭幸","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.
"K. Makiyama,Y. Niida,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)","2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)",,,,,,2016,Oct.
"A. Yukimachi,Y. Miyamoto","InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope",,"Jpn. J. Appl. Phys.",,"vol. 55"," 118004",,2016,Oct.
"金澤 徹,雨宮 智宏,宮本 恭幸","二次元材料HfS2を用いたMOSトランジスタ",,"月刊機能材料",,"Vol. 36","No. 9","pp. 46-52",2016,Sept.
"金澤 徹,Vikrant Upadhyaya,雨宮 智宏,石川 篤,鶴田 健二,田中 拓男,宮本 恭幸","HfO2パッシベーションによるHfS2 FETの特性改善","第77回応用物理学会秋季学術講演会",,,,"No. 16a-A32-3",,2016,Sept.
"Nobukazu Kise,Haruki Kinoshita,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain",,"Solid-State Electronics",,"Vol. 126",,"pp. 92-95",2016,Sept.
"Y. Miyamoto","Recent progress in compound semiconductor electron devices (Review paper)",,"IEICE Electronics Express",,"Vol. 13(2016)","No. 18","pp. 1-13",2016,Sept.
"大澤 一斗,木瀬 信和,宮本 恭幸","15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性","第77回応用物理学会秋季学術講演会",,,,,,2016,Sept.
"K. Ohsawa,N. Kise,Y. Miyamoto","Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks","2016 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2016,Sept.
"K. Makiyama,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,Y. Niida,Y. Kamada,M. Sato,K. Joshin,K. Watanabe,Y. Miyamoto","High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)","URSI AP-RASC 2016",,,,,,2016,Aug.
"K. Makiyama,S. Ozaki,Y. Niida,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)","2016 Lester Eastman Conference (LEC)",,,,,"pp. 31-34",2016,Aug.
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Experimental approach for feasibility of superlattice FETs","2016 Lester Eastman Conference (LEC)",,,,,"pp. 8-11",2016,Aug.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Effect of the HfO2 passivation on HfS2 Transistors","16th International Conference on Nanotechnology (IEEE NANO 2016)",,,,"No. ThAM11.3",,2016,Aug.
"Vikrant Upadhyaya,Toru Kanazawa,YASUYUKI MIYAMOTO","Vacuum annealing and passivation of Hf2 FET for mitigation of atmospheric degradation","2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)",,,," A5-7","pp. 231-235",2016,July
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Tatsuhiro Urakami,Takuo Tanaka,Shigehisa Arai","(Invited) Permeability Engineering in Optical Communication Devices","The First A3 Metamaterials Forum",,," I-25",,,2016,July
"Y. Miyamoto,W. Lin,S.Iwata,K. Fukuda","Steep sub-threshold slope in short-channel InGaAs TFET (Invited)","The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)",,,,," A6-I-01",2016,July
"Haruki Kinoshita,Nobukazu Kise,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","Compound Semiconductor Week (CSW2016)",,,," TuD4-2",,2016,June
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,Yasuyuki Miyamoto","Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070303",2016,June
"Vikrant Upadhyaya,Toru Kanazawa,Yasuyuki Miyamoto","Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 48","pp. 47-50",2016,May
"宮本恭幸","III-V族チャネルを持つMOSFET (特集解説)",,"電気学会論文誌C",,"vol. 136","no. 4","pp. 437-443",2016,Apr.
"岩田 真次郎,大橋 一水,林 文博,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性",,"電気学会論文誌C",,"Vol. 136","no. 4","pp. 467-473",2016,Apr.
"木下 治紀,木瀬 信和,祢津 誠晃,金澤 徹,宮本 恭幸","再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,," 22p-W541-5",,2016,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Few Layer HfS2 FET",,"Scientific Reports",,"Vol. 6",,"pp. 22277",2016,Mar.
"林 文博,岩田 真次郎,福田 浩一,宮本 恭幸","短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"Upadhyaya Vikrant,kanazawa Toru,Miyamoto Yasuyuki","Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor","第63回応用物理学会春季学術講演会",,,," 21p-H103-2",,2016,Mar.
"Y. Miyamoto","Steep slope devices with InGaAs channel for post Si CMOS application","China Semiconductor Technology International Conference (CSTIC) 2016",,,,,,2016,Mar.
"木下 治紀,木瀬 信和,祢津 誠晃,金澤 徹,宮本 恭幸","[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"F. A. Fatah,Y.-C. Lin,R.-X. Liu,K.-C. Yang,T.-W. Lin,H.-T. Hsu,J.-H. Yang,Y. Miyamoto,H. Iwai,C. Hu,S. Salahuddin,E. Y. Chang","A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,",,"Applied Physics Express",,"Volume 9"," 026502",,2016,Jan.
"K. Makiyama,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,Y. Niida,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz","2015 IEEE International Electron Devices Meeting (IEDM)",,,,,,2015,Dec.
"F. A. Fatah,Y.-C. Lin,T.-Y. Lee,K.-C. Yang,R.-X. Liu,J.-R. Chan,H.-T. Hsu,Y. Miyamoto,E. Y. Chang","Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications",,"Solid State Sci. Technol",,"volume 4"," issue 12"," N157-N159",2015,Oct.
"行待 篤志,宮本 恭幸","超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード","第76回応用物理学会秋季学術講演会",,,,," 16a-4C-3",2015,Sept.
"木下 治紀,金澤 徹,祢津 誠晃,三嶋 裕一,宮本 恭幸","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス","第76回応用物理学会秋季学術講演会",,,,," 16a-1C-9",2015,Sept.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Y. Miyamoto,M. Fujimatsu,K. Ohashi,A. Yukimachi,S. Iwata","Steep subthreshold slope in InGaAs MOSFET","SemiconNano2015",,,,,,2015,Sept.
"S. Iwata,W. Lin,K. Fukuda,Y. Miyamoto","Design of drain for low off current in GaAsSb/InGaAs tunnel FETs","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Takuo Tanaka,Kenji Tsuruta,Yasuyuki Miyamoto","HfS2 Electric Double Layer Transistor with High Drain Current","47th International Conference on Solid State Devices and Materials (SSDM 2015)",,,,,,2015,Sept.
"H.Kinoshita,S.Netsu,Y.mishima,T.Kanazawa,Y.Miyamoto","Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain","11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)",,,,,,2015,Aug.
"S. Netsu,T. Kanazawa,Y. Miyamoto","Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"K. Ohsawa,Y. Mishima,Y. Miyamoto","Operation of 13-nm channel length InGaAs-MOSFET with n-InP source","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"R Yamanaka,T. Kanazawa,E. Yagyu,Y. Miyamoto","Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique",,"Jpn. J. Appl.Phys.",,"Volume 54","Number S61",,2015,June
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","(Invited) Possibility of permeability control on InP-based photonic integration platform","8th International Conference on Materiaals for Advanced Tachnologies (ICMAT 2015)",,,,"No. D2-PM2",,2015,June
"T. Kanazawa,T. Amemiya,A. Ishikawa,V. Upadhyaya,K. Tsuruta,T. Tanaka,Y. Miyamoto","Fabrication of Thin-Film HfS2 FET","73rd Device Research Conference (DRC)",,,,,,2015,June
"雨宮 智宏,石川 篤,金澤 徹,西山 伸彦,宮本 恭幸,田中 拓男,荒井 滋久","光通信素子における透磁率制御の可能性","第136回微小光学研究会",,,,,,2015,May
"K. Ohashi,M. Fujimatsu,S. Iwata,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs",,"Jpn. J. Appl.Phys.",,"Vol. 54","Number 4S",,2015,Apr.
"大澤 一斗,三嶋 裕一,宮本 恭幸","InGaAs-MOSFETのチャネル長微細化に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"宮本恭幸,行待篤志","超格子ソースによるスティープスロープFETの可能性","電子情報通信学会 総合大会",,,,,,2015,Mar.
"岩田真次郎,大橋一水,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性","電子情報通信学会 総合大会",,,,,,2015,Mar.
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,JoonHyun Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform",,"Scientific Reports",,"Vol. 5",,"pp. 8985",2015,Mar.
"祢津 誠晃,金澤 徹,宮本 恭幸","HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"木下 治紀,金澤 徹,祢津 誠晃,三嶋 裕一,宮本 恭幸","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"金澤 徹,雨宮 智宏,石川 篤,鶴田 健二,田中 拓男,宮本 恭幸","薄膜HfS2 FET","第62回応用物理学会春季学術講演会",,,,"No. 14p-D7-6",,2015,Mar.
"行待 篤志,柏野 壮志,宮本 恭幸","超格子FETに向けたダブルバリアp-i-n接合ダイオード","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"石川 篤,金澤 徹,雨宮 智宏,鶴田 健二,田中 拓男,宮本 恭幸","機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価","第62回応用物理学会春季学術講演会",,,,"No. 11a-P6-27",,2015,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability Engineering of Semiconductor Photonic Devices",,"Interferometers: Fundamentals, Methods and Applications (ISBN: 978-1-63483-692-0)","Nova Science Publishers",,,"pp. 15-36",2015,
"R. Yamanaka,T. Kanazawa,E. Yagyu,Y. Miyamoto","Normally-off AlGaN/GaN HEMT using Digital Etching Technique","2014 International Microprocesses and Nanotechnology Conference (MNC)",,,,,,2014,Nov.
"K. Ohashi,M. Fujimatsu,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs","2014 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2014,Sept.
"雨宮 智宏,金澤徹,石川 篤,姜 ??,コ シチン,西山 伸彦,宮本 恭幸,田中 拓男,荒井 滋久","［依頼講演］透磁率制御メタマテリアルを装荷した光変調器","電気情報通信学会 2014年ソサイエティ大会",,,,,,2014,Sept.
"山中僚大,金澤徹,柳生栄治,宮本恭幸","デジタルエッチングを用いたGaN HEMTのノーマリーオフ化","第75回応用物理学会秋季学術講演会",,,,,,2014,Sept.
"大橋一水,藤松基彦,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける SSとON電流のボディ幅依存性","第75回応用物理学会秋季学術講演会",,,,,,2014,Sept.
"宮本恭幸","低消費電力と高速動作を両立させるInP系電子デバイス","電子情報通信学会 エレクトロニクスソサエティ大会","エレクトロニクスソサエティ受賞記念講演",,,,,2014,Sept.
"大橋一水,藤松基彦,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いたDouble-Gate Tunnel FETの理論特性とその実験的検証","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"宮本恭幸,金澤 徹,米内義晴,加藤 淳,藤松基彦,柏野壮志,大澤一斗,大橋一水","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,T. Irisawa,M. Oda,T. Tezuka","(Invited) Growth Process for High Performance of InGaAs MOSFETs","72nd Device Research Conference (DRC)",,,,,,2014,June
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","(Invited) Meta-photonics for Advanced InP-based Photonic Integration","the Collaborative Conference on Materials Research (CCMR) 2014",,,,"No. Day1. p.85",,2014,June
"Y. Atsumi,N. Taksatorn,N. Nishiyama,Y. Miyamoto,S. Arai","Loss reduction of Si optical waveguides by beam step-size fracturing technique in electron beam lithography",,"Japanese Journal of Applied Physics","JSAP","Vol. 53","No. 6","p. 06JB04",2014,May
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"M. Yamada,K. Uchida,Y. Miyamoto","Delay time component of InGaAs MOSFET caused by dynamic source resistance",,"IEICE Trans. Electron",,"Vol. E97-C","No. 5","pp. 419-422",2014,May
"山口裕太郎,大石敏之,大塚浩志,山中宏治,TeoKoonHoo,宮本恭幸","GaN HEMTの過渡応答バイアス依存性によるトラップ解析","第61回春季応用物理学会学術講演会",,,,,,2014,Mar.
"大石敏之,山口裕太郎,大塚浩志,山中宏治,野上洋一,福本宏,宮本恭幸","GaNショットキーバリアダイオードの温度依存性モデル","第61回春季応用物理学会学術講演会",,,,,,2014,Mar.
"入澤寿史,小田穣,池田圭司,守山佳彦,三枝栄子,JevaswanWipakorn,前田辰朗,市川麿,長田剛規,宮本恭幸,秦雅彦,手塚勉","高移動度(111)B面をチャネルに有する三角形状InGaAs-OI nMOSFET","第61回春季応用物理学会学術講演会",,,,,,2014,Mar.
"三嶋裕一,金澤徹,木下治紀,上原英治,宮本恭幸","再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET","第61回春季応用 物理学会学術講演会",,,,,,2014,Mar.
"入澤寿史,小田穣,池田圭司,守山佳彦,三枝栄子,JevaswanWipakorn,前田辰朗,市川麿,長田剛規,宮本恭幸,秦雅彦,手塚勉","MOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFET","電気学会電子デバイス研究会",,,,,,2014,Mar.
"金澤徹,三嶋裕一,木下治紀,上原英治,宮本恭幸","MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET","電子情報通信学 会 電子デバイス研究会","IEICE technical report",,,,,2014,Jan.
"入澤寿史,小田穣,池田圭司,守山佳彦,三枝栄子,JevaswanWipakorn,前田辰朗,市川麿,長田剛規,宮本恭幸,秦雅彦,手塚勉","MOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFET","電子情報通信学会 シリコン材料・デバイス研究会",,,,,,2014,Jan.
"T. Irisawa,M. Oda,K. Ikeda,Y. Moriyama,E. Mieda,W. Jevasuwan,T. Maeda,O. Ichikawa,T. Osada,M. Hata,Y. Miyamoto,T. Tezuka","High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin Structures","2013 International Electron Devices Meeting",,,,,,2013,Dec.
"雨宮智宏,金澤 徹,石川 篤,カン ジュンヒョン,西山伸彦,宮本恭幸,田中拓男,荒井滋久","メタマテリアルを用いたInP系プラットフォームにおける透磁率制御","電子情報通信学会 光エレクトロニクス研究会（OPE）","IEICE Technical Report",,"Vol. 113","No. 370","pp. 45-50",2013,Dec.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,K. Ohsawa,M. Oda,T. Irisawa,T. Tezuka","Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density","44th IEEE Semiconductor Interface Specialists Conference (SICS 2013)",,,,,,2013,Dec.
"Yuki Atsumi,N. Taksatorn,N. Nishiyama,Y. Miyamoto,S.Arai","Miniaturization of exposure area for electron beam lithography using proximity effect correction toward Si optical circuits","26th International Microprocesses and Nanotechnology Conference (MNC 2013)",,,,,,2013,Nov.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","(Invited) Photonic metamaterials in semiconductor optical devices","2013 EMN Open Access Week",,,,,,2013,Oct.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,," 2-9","pp. 19-20",2013,Sept.
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,K. Yamanaka,Y. Miyamoto","Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"M. Oda,T. Irisawa,E. Mieda,Y. Kurashima,H. Takagi,W. Jevasuwan,T. Maeda,O. Ichikawa,T. Ishihara,T. Osada,Y. Miyamoto,T. Tezuka","Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"宮本恭幸,金澤徹","InGaAs MOSFETの現状と将来展望","電気学会 電子・情報・システム部門大会",,,,,,2013,Sept.
"柏野壮志,行待篤志,宮本恭幸","急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"山口 裕太郎,林 一夫,大石 敏之,大塚 浩志,山中 宏治,宮本恭幸","C-10-1 ソースフィールドプレートGaN HEMTのドレインソース間容量とドレイン抵抗のトレードオフの解析(C-10.電子デバイス,一般セッション)",,"電子情報通信学会ソサイエティ大会講演論文集","一般社団法人電子情報通信学会","Vol. 2013","No. 2","pp. 53",2013,Sept.
"大澤一斗,加藤淳,佐賀井健,金澤徹,上原英治,宮本恭幸","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"Y. Miyamoto","InGaAs channel MOSFET for high-speed/low-power application","The 16th International Symposium on the Physics of Semiconductors and Applications (ISPSA)",,,,,,2013,July
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,Eijun Murai,Takahiko Shindo,J. Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial","The Conference on Lasers and Electro-Optics 2013 (CLEO 2013)",,,,"No. QM1A.6",,2013,June
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"宮本 恭幸","超高速トランシ?スタ技術の現状と展望","2013年電子情報通信学会総合大会",,,,,,2013,Mar.
"雨宮智宏,金澤徹,石川篤,明賀聖慈,村井英淳,進藤隆彦,姜??,西山伸彦,宮本恭幸,田中拓男,荒井滋久","微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析","第60回応用物理学関係連合講演会","第60回応用物理学関係連合講演会",," 29p-B3-14",,,2013,Mar.
"加藤淳,米内義晴,金澤徹,宮本恭幸","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第 60 回応用物理学会春季学術講演会",,,,,,2013,Mar.
"宮本恭幸","東工大の微細加工プラットフォームにおける支援事例","日本化学会第93春季年会",,,,,,2013,Mar.
"佐賀井 健,上原 英治,大澤 一斗,宮本 恭幸","n-InP ソースを持つT ケ?ート構造 InGaAs-MOSFET の高周波特性","2013年電子情報通信学会総合大会",,,,,,2013,Mar.
"宮本 恭幸,藤松 基彦","GaAsSb/InGaAs 縦型トンネル FET","電気学会電子デバイス研究会",,,,,,2013,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,Eijun Murai,Takahiko Shindo,J. Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability-controlled Optical Modulator with Tri-gate Metamaterial","the 4th International Topical Meeting on Nanophotonics and Metamaterials (NANOMETA 2013)",,,,"No. FRI5o.2",,2013,Jan.
"芝原 健太郎,宮本恭幸,内田 建","タウア・ニン 最新VLSIの基礎 第二版",,,"丸善",,,,2013,Jan.
"宮本恭幸","微細加工ナノプラットフォームコンソーシアムによる設備共用の取り組み","電子情報通信学会シリコンフォトニクスファウンドリユーザー及びポテンシャルユーザーズフォーラム",,,,,,2013,Jan.
"K. Hayashi,Y. Yamaguchi,T. Oishi,H. Ostuka,K. Yamanaka,M. Nakayama,Y. Miyamoto","Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4"," issue 2",2013,
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4"," issue 2",2013,
"C.-H. Yu,H.-T. Hsu,C.-Y. Chiang,C.-I Kuo,Y. Miyamoto,E. Y. Chang","Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching",,"JPN. J. APPL. PHYS.",,"vol. 52","no. 2",,2013,
"E. Y. Chang,C.-I Kuo,H.-T. Hsu,C.-Y. Chiang,Y. Miyamoto","InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications",,"Appl. Phys. Exp.",,"vol. 6","no. 3",,2013,
"林 一夫,大石 敏之,加茂 宣卓,山口 裕太郎,大塚 浩志,山中 宏治,中山 正敏,宮本 恭幸","AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析",,"電子情報通信学会論文誌. C, エレクトロニクス",,"Vol. J96-C","No. 8","pp. 200-208",2013,
"上澤岳史,宮本恭幸","縦型 ケ?ート制御ホットエレクトロントランシ?スタの新しい遮断周波数算出方法",,"電子情報通信学会論文誌",,"Vol. J96-C","No. 7","pp. 174-179",2013,
"宮本恭幸,金澤徹","MOSFET低電圧化の為のInGaAs チャネル","応用物理学会北陸・信越支部学術講演会",,,,,,2012,Nov.
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,T. Nanjo,K. Yamanaka,M. Nakayama,Y. Miyamoto","Simulation study and reduction of reverse gate leakage current for GaN HEMTs",,,,,,,2012,Oct.
"雨宮智宏,金澤徹,石川篤,明賀聖慈,村井英淳,進藤隆彦,姜??,西山伸彦,宮本恭幸,田中拓男,荒井滋久","透磁率の制御によるInP 系導波路型光変調器",,"第73回秋季応用物理学会学術講演会",,"Vol. 愛媛","No. 13p-C5-3",,2012,Sept.
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,K. Yamanaka,M. Nakayama,Y. Miyamoto","Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"T. Oishi,K. Hayashi,Y. Yamaguchi,H. Otsuka,K. Yamanaka,M. Nakayama,Y. Miyamoto","Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"大石敏之,林一夫,佐々木肇,山口裕太郎,大塚浩志,山中宏治,中山正敏,宮本恭幸","トランシ?スタ動作時における GaN HEMT ケ?ートリークのテ?ハ?イスシミュレーションによる解析","電子情報通信学会2012年ソサエティ大会",,,,,,2012,Sept.
"田中 啓史,宮本恭幸","55 nm 幅エミッタInP HBT およひ?電流密度とエミッタ幅の関係","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"佐賀井健,米内義晴,宮本恭幸","InGaAs チャネル MOSFET の EOT 削減による 伝達コンタ?クタンス向上","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ト?レイン層及ひ?狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"加藤淳,米内義晴,金澤徹,宮本恭幸","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第73 回応用物理学会学術講演会",,,,,,2012,Sept.
"藤松基彦,宮本恭幸","GaAsSb/InGaAs ヘテロ接合を用いた縦型トンネル FET における サフ?スレッショルト?スローフ?の改善","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"M. Fujimatsu,H. Saito,Y. Miyamoto","71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure","24th Int. Conf. Indium Phosphide and Related Materials (IPRM2012)",,,,,,2012,Aug.
"山口 裕太郎,林 一夫,大石 敏之,大塚 浩志,小山 英寿,加茂 宣卓,山中 宏治,中山 正敏,宮本恭幸","C-10-5 GaN HEMTの電界とゲートドレイン間容量のトレードオフとPAEへの影響についてのシミュレーション解析(C-10. 電子デバイス,一般セッション)",,"電子情報通信学会ソサイエティ大会講演論文集","一般社団法人電子情報通信学会","Vol. 2012","No. 2","pp. 62",2012,Aug.
"K. Tanaka,Y. Miyamoto","InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and Current Density","24th Int. Conf. Indium Phosphide and Related Materials (IPRM2012)",,,,,,2012,Aug.
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化","電子情報通信学会技術研究報告",,,,,,2012,May
"Atsushi Kato,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,Yasuyuki Miyamoto","Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 904-919",2012,May
"Naoaki Takebe,Y. Miyamoto","Reduction of base-collector capacitance in InP/InGaAs DHBT with buried SiO2 wires",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 917-920",2012,May
"Hisashi Saito,Y. Miyamoto","Reduction of Output Conductance in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region",,"Applied Phys. Exp.",,"vol. 5","no. 2","pp. 24101",2012,Mar.
"山口裕太郎,大石敏之,大塚浩志,山中宏治,南條拓真,中山正敏,平野嘉仁,宮本恭幸","デバイスシミュレーションによるGaN HEMTのゲートリークの解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.
"米内義晴,金澤徹,池田俊介,宮本恭幸","InPエッチング異方性による微細InGaAsチャネルMOSFET","応用物理学会 2012年度春季大会",,,,,,2012,Mar.
"宮本 恭幸,米内義晴,金澤徹","エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化","電気学会電子デバイス研究会",,,,,,2012,Mar.
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.
"宮本恭幸,米内義晴,金澤徹","エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化","電気学会電子デバイス研究会",,,,,,2012,Mar.
"宮本恭幸,米内義晴,金澤徹","InGaAs MOSFETの高電流密度化","電子情報通信学会技術研究報告",,,,,,2012,Jan.
"宮本恭幸,山田真之,内田建","InGaAs MOSFETにおけるソース充電時間の検討","電子情報通信学会技術研究報告",,,,,,2012,Jan.
"Jun Hirai,Tomoki Kususaki,Shunsuke Ikeda,YASUYUKI MIYAMOTO","Vertical InGaAs MOSFET with HfO2 gate","2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2012)",,,,,,2012,
"F. Fatah,C.-I Kuo,H.-T. Hsu,C.-Y. Chiang,C.-Y. Hsu,Y. Miyamoto,E. Y. Chang","Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz",,"JPN. J. APPL. PHYS.",,"vol. 51","no. 11",,2012,
"宮本恭幸,米内義晴,金澤徹","InGaAs MOSFETの高電流密度化","電子情報通信学会 電子デバイス研究会（ED）",,,,,,2011,Dec.
"YASUYUKI MIYAMOTO,Hisashi Saito,Toru Kanazawa","High-current-density InP ultrafine devices for high-speed operation","The International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)",,,,,,2011,Oct.
"加藤淳,金澤徹,宮本恭幸","ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"T. Kanazawa,R. Terao,S. Ikeda,Y. Miyamoto","MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm","23rd Int. Conf. Indium Phosphide and Related Materials (IPRM2011)",,,,,,2011,Sept.
"N. Takebe,Y. Miyamoto","Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"A. Kato,T. Kanazawa,S. Ikeda,Y. Yonai,YASUYUKI MIYAMOTO","Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"Y. Yamaguchi,T. Sagai,Y. Miyamoto","Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process","9th Topical Workshop on Heterostructure Materials",,,,,,2011,Sept.
"宮本恭幸,金澤徹","InP系化合物半導体を用いたMOSFETの技術動向","電気学会 電子・情報・システム部門大会",,,,,,2011,Sept.
"池田俊介,金澤徹,宮本恭幸","電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"藤松基彦,齋藤尚史,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"大石 敏之,大塚 浩志,山中 宏治,中山 正敏,平野 嘉仁,宮本恭幸","C-10-7 緑色光照射時の等価回路パラメータ測定によるGaN HEMTのトラップ解析(C-10.電子デバイス,一般セッション)",,"電子情報通信学会ソサイエティ大会講演論文集","一般社団法人電子情報通信学会","Vol. 2011","No. 2","pp. 61",2011,Aug.
"N. Takebe,T. Kobayashi,H. Suzuki,Y. Miyamoto,K. Furuya","Fabrication of InP/InGaAs DHBTs with buried SiO2 wires",,"IEICE Trans. Electron.","IEICE","vol. E94-C","no. 5","pp. 830-834",2011,May
"M. Yamada,T. Uesawa,Y. Miyamoto,K. Furuya","Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density",,"IEEE Electron Device Lett.","IEEE","vol. 32","# 4","pp. 491-493",2011,Apr.
"山口裕太郎,佐賀井健,宮本恭幸","基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製","第58回応用物理学会関係連合講演会",,,,,,2011,Apr.
"武部直明,宮本恭幸","InP/InGaAs DHBT におけるSiO2細線埋め込みによるベースコレクタ間容量の削減","第58回応用物理学会関係連合講演会",,,,,,2011,Apr.
"R. Terao,T. Kanazawa,S. Ikeda,Y. Yonai,A. Kato,Y. Miyamoto","InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm",,"Applied Phys. Exp.","The Japan Society of Applied Physics","vol. 4","no. 5"," 054201",2011,Apr.
"松本 豊,齋藤尚史,宮本恭幸","縦型InGaAs MIS-FETのソース寄生容量の削減","電気学会電子デバイス研究会",,,,,,2011,Mar.
"藤松基彦,齋藤尚史,楠崎智樹,松本 豊,平井 準,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究","第58回応用物理学会関係連合講演会",,,,,,2011,Mar.
"宮本恭幸","グリーンナノテクノロジー―環境・エネルギー問題に挑戦する人々",,,"日刊工業新聞社",,,,2011,Feb.
"H. Saito,Y. Matsumoto,Y. Miyamoto,K. Furuya","Vertical InGaAs Channel Metal?Insulator?Semiconductor Field Effect Transistor with High Current Density",,"Jpn. J. Appl. Phys.",,"vol. 50","no. 1"," 014102",2011,Jan.
"金澤 徹,寺尾 良輔,山口 裕太郎,池田 俊介,米内 義晴,加藤 淳,宮本 恭幸","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"Yosiharu Yonai,Toru Kanazawa,Shunsuke Ikeda,YASUYUKI MIYAMOTO","High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching","2011 IEEE International Electron Devices Meeting (IEDM 2011)",,,,,,2011,
"Wang,C.-T.,Kuo,C.-I.,Hsu,H.-T.,Chang, E.Y.,Hsu,L.-H.,Lim,W.-C.,YASUYUKI MIYAMOTO","Flip-chip packaging of low-noise metamorphic high electron mobility transistors on low-cost organic substrate",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 9 PART 1",,2011,
"Matsumoto, Y.,Saito, H.,YASUYUKI MIYAMOTO","Reduction of source parasitic capacitance in vertical InGaAs MISFET",,"Conference Proceedings - International Conference on Indium Phosphide and Related Materials",,,,,2011,
"Motohiko Fujimatsu,Hisashi Saito,YASUYUKI MIYAMOTO","GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure","2011 International Conference on Solid State Devices and Materials(SSDM 2011)",,,,,,2011,
"Chien-I Kuo,Wee Chin Lim,Heng-Tung Hsu,Chin-Te Wang,Li-Han Hsu,Faiz Aizad,Guo-Wei Hung,Yasuyuki Miyamoto,Edward Yi Chang","Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate","2010 International Conference on Enabling Science and Nanotechnology (ESciNano)",,,,,,2010,Dec.
"宮本恭幸","極微細ヘテロ接合トランジスタ",,"応用物理",,"vol. 79","no. 11","pp. 1010-1013",2010,Nov.
"Y. Miyamoto,H. Saito,T. Kanazawa","Submicron-channel InGaAs MISFET with epitaxially grown source","10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)",,,,,,2010,Nov.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer","2010 International Conference on Solid State Devices and Materials",,,,,"pp. 129-130",2010,Sept.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9"," 094201",2010,Sept.