"M. S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Electrical and Memory Window Properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 Ferroelectric Gate in Metal-Ferroelectric-Insulator-Semiconductor Structure",,"Journal of Electroceramics",,"Vol. 28","No. 2-3","pp. 158-164",2012,Mar.
"Lee Gwang Geun,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO","第７２回応用物理学会学術講演会",,,,,,2011,Aug.
"Gwang-Geun Lee,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Express",,"Vol. 4",,"pp. 091103-1-3",2011,Aug.
"Gwang-Geun Lee,Eisuke Tokumitsu,Sung-Min Yoon,Yosihisa Fujisaki,Joo-Won Yoon,Hiroshi Ishiwara","The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Letters",,"Vol. 99",,"pp. 012901-1-3",2011,July
"Jeong Hwan Kim,Hiroshi Funakubo,Hiroshi Ishiwara","High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0:95Mn0:05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates",,"Applied Physics Express",,"Vol. 4",,"pp. 081501-1-3",2011,
"Jeong Hwan Kim,Hiroshi Funakubo,Hiroshi Ishiwara","Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering",,"Jpn. J. Appl. Phys.",,"Vol. 50",,"pp. 051501-1-4",2011,
"G.-G. Lee,S.-M. Yoon,J.-W. Yoon,Y. Fujisaki,H. Ishiwara,E. Tokumitsu","Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)","The 17th International Display Workshops(IDW’10)",,,,,,2010,Dec.
"GwangGeun Lee,Sung-ming Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs","2010 fall meeting, Materials Research Society",,,,,,2010,Nov.
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"Mehmet S. Bozgeyik,J.S. Cross,H. Ishiwara,K. Shinozaki","Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates",,"Microelectronic Engineering",,"Vol. 87","No. 11","pp. 2173-2177",2010,July
"Sung-Min Yoon,Shin-Hyuk Yang,Soon-Won Jung,Chun-Won Byun,Sang-Hee Ko Park,Chi-Sun Hwang,Gwang-Geun Lee,Eisuke Tokumitsu,Hiroshi Ishiwara","Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor",,"Applied Physics Letters",,,"No. 96"," 232903 1-3",2010,May
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,藤崎芳久,石原宏,徳光永輔","有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価",,"信学技報、SDM2010-16、OME2010-16(2010-04)","社団法人電子情報通信学会","Vol. 110","No. 15","pp. 71-75",2010,Apr.
"Young uk Song,Shun-ichiro Ohmi,Hiroshi Ishiwara","Investigation of n-type properties of pentacene based on MOS diodes utilizing ultra thin metal interlayer","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 12-435",2010,Mar.
"Jeong Hwan Kim,Hiroshi Funakubo,Yoshihiro Sugiyama,Hiroshi Ishiwara","Process-dependent coercive fields in undoped and Mn-doped BiFeO3 films formed on SrRuO3/Pt(111) electrodes by rf sputtering",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 1199",,"pp. 1199-F06-33",2010,
"GwangGeun Lee,Sung-ming Yoon,JooWon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film","2009 fall meeting, Materials Research Society",,,,,,2009,Nov.
"Lee Gwang Geun,Hoowon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode","第70回 応用物理学会学術講演会","第70回 応用物理学会学術講演会",,," 11p-L-2",,2009,Sept.
"Mehmet S. Bozgeyik,Jeffrey S. Cross,Hiroshi Ishiwara,Kazuo Shinozaki","Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"pp. 061403-6",2009,June
"Mehmet S. Bozgeyik,J.S. Cross,H. Ishiwara,K. Shinozaki","Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films",,"Materials Science and Engineering B",,"Vol. 161",,"pp. 130-133",2009,June
"M. Akhtaruzzaman,S. Ohmi,J. Nishida,Y. Yamashita,H. Ishiwara","Study on Stability of Pentacene-Based Metal-Oxide-Semiconductor Diodes in Air Using Capacitance-Voltage Characteristics",,"Japan J. Appl. Phys.",,"Vol. 48",,"p. 04C178-1-3",2009,June
"Joo-Won Yoon,Shun-ichiro Ohmi,Hiroshi Ishiwara","Retention Characteristics of poly(vinylidenefluoride-trifluoroethylene)MFIS diodes","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会予稿集","応用物理学会",,,,2009,Mar.
"Jeong Hwan Kim,Hiroshi Funakubo,Yoshihiro Sugiyama,Hiroshi Ishiwara","Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering",,"Jpn. J.Appl. Phys.",,"Vol. 48",,"pp. 09KB02-1-4",2009,
"金正桓,舟窪浩,石原宏","SrRuO3/Pt(111)とPt(111)の上にスパッタで形成されたBiFeO3膜の電気特性評価","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 2p-K-1/II",,,2008,Sept.
"尹珠元,石原宏","Characterics of MFIS structures based on poly (vinylidene fluoridetrifluoroethylene)","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 3a-K-4/II",,,2008,Sept.
"王冬きょう,石原宏","Sr2(Ta,Nb)2O7を強誘電体層に用いたMFISの評価","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 3a-K-5/II",,,2008,Sept.
"鉾宏真,川嶋将一郎,石原宏","p-ch MFIS-FETとn-ch MOSFETからなる改良２T型FeRAMセルの電気特性",,"2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集","2008年（平成20年）秋季第69回応用物理学会学術講演会"," 3a-K-7/II",,,2008,Sept.
"近藤佑美,鉾宏真,石原宏","2T型強誘電体メモリのデータディスターブ特性IV","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 3a-K-8/II",,,2008,Sept.
"陸旭兵,石原宏","Improved electrical properties of metal-ferroelectric-insulator-silicon diodes using an epitaxial SrTio3 buffer layer","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 3a-K-10/II",,,2008,Sept.
"田中敬人,安念一規,井端雅一,石原宏","平坦化強誘電体膜を用いたC60メモリトランジスタ","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 3a-K-11/II",,,2008,Sept.
"鐘志勇,石原宏","Enhanced ferroelectric properties of BiFexCr1-xO3 thin film formed by chemical solution deposition","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",," 2a-K-11/II",,,2008,Sept.
"Mehmet S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 1071",,"pp. 207-212",2008,June
"Mehmet S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Effect of Ba and Zr Doping in Sr0.8Bi2.2Ta2O9 Thin Films","The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)","The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)",,,"No. PC07",,2008,May
"王冬きょう,石原宏","バッファ層を用いたMFISダイオードの評価","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",," 30a-P14-31/II",,,2008,Mar.
"尹珠元,大見俊一郎,石原宏","Ferroelectrics Characteristics of poly (vinylidene fluoride-trifluoroethylene) MFIS diodes","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",," 30a-P14-30/II",,,2008,Mar.
"陸旭兵,杉山芳弘,石原宏","Electrical Properties of ZrSiO4 doped Sr0.8Bi2.2Ta2O9 films","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",," 30a-P14-11/II",,,2008,Mar.
"Mehmet Sait Bozgeyik,Jeffery S. Cross,Hiroshi Ishiwara,Kazuo Shinozaki","Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films","MRS Spring Meeting","MRS Spring Meeting",,," F3.9",,2008,Mar.
"近藤佑美,李月剛,鉾宏真,有本由弘,石原宏","2T型強誘電体メモリのデータディスターブ特性の評価III","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",," 30a-P14-32/II",,,2008,Mar.
"尹珠元,大見俊一郎,石原宏","Ferroelectrics Characteristics of poly (vinylidene fluoride - trifluoroethylene) MFIS diodes","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 2","p. 579",2008,Mar.
"尹珠元,大見俊一郎,石原宏","Characteristics of metal-ferroelectric-insulartor-semiconductor structures based on poly(vinylidene fluoride-trifluoroethylene)","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 107","No. 549","pp. 13-16",2008,Mar.
"安念一規,田中敬人,井端雅一,石原宏","C60フラーレンを用いた強誘電体ゲートトランジスタ(II)","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",," 28a-ZE-14/III",,,2008,Mar.
"X-B Lu,K. Maruyama,H. Ishiwara","Characterization of HfTaO films for gate oxide and etal-ferroelectric-insulator-silicon device applications",,"J. Appl. Phys.",,"Vol. 103",,"p. 044105(5pages)",2008,Feb.
"Y. Taniguchi,T. Endo,K. Azuma,M. Matsumura,H. Ishiwara","Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization",,"Jpn. J. Appl. Phys.",,"Vol. 47","No. 2","pp. 947-955",2008,Feb.
"X-B Lu,K. Maruyama,H. Ishiwara","Metal-ferroelectric-insulator-Si devices using HfTaO buffer layers",,"Semicond. Sci. Technol.",,"Vol. 23",,"p. 045002 (5pp)",2008,Feb.
"S. K. Singh,H. Ishiwara,K. Sato,K. Maruyama","Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films",,"J. Appl. Phys.",,"Vol. 102",,"p. 094109(5pages)",2007,Nov.
"S. Fujisaki,Y. Fujisaki,H. Ishiwara","Excellent Ferroelectricity of Thin Poly (Vinylidene Fluoride-Trifluoroethylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes",,"IEEE Trans. on Untrsonics, Ferroelectrics, and Frequency Control",,"Vol. 54","No. 12","pp. 2592-2594",2007,Nov.
"HIROSHI ISHIWARA","Current status and prospect of ferroelectric random access memory","Intern. Sympo. on Organic and Inorganic Electronic Materials and Related Nanotechnologies","Intern. Sympo. on Organic and Inorganic Electronic Materials and Related Nanotechnologies",,"Vol. 1A-07I",,,2007,Oct.
"J-W.Yoon,S.Fujisaki,H.Ishiwara","Patterning of poly(vinyliden fluoride-trifluoroethylene) thin films by oxygen plasma etching","4th Conf. on New Exploratory Technologies","4th Conf. on New Exploratory Technologies",,"Vol. Eo3-03",,,2007,Oct.
"S.K.Singh,K.Maruyama,H.Ishiwara","Enhanced electrical properties by co-doping of La, Mn and Cr atoms in BiFeO3 thin films","5th IUMRS Intern. Conf. on Advanced Materials","5th IUMRS Intern. Conf. on Advanced Materials",,"Vol. C-Oral-13",,,2007,Oct.
"HIROSHI ISHIWARA","Recent Progress in Ferroelectric Memory Technology","4th Conf. on New Exploratory Technologies","4th Conf. on New Exploratory Technologies",,"Vol. II-01",,,2007,Oct.
"HIROSHI ISHIWARA","Current Status and Prospect of Ferroelectric Random Access Memory","5th IUMRS Intern. Conf. on Advanced Materials","5th IUMRS Intern. Conf. on Advanced Materials",,"Vol. C-Inv-01",,,2007,Oct.
"池田武嗣,田渕良志明,田村哲朗,鉾宏真,有本由弘,石原宏","MSIF-FETを用いたNAND型強誘電体メモリ回路における書込みディスター","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-5/?",,,2007,Sept.
"岡沢昴,丸山研二,石原宏","低比誘電率材料Bi2W0.9Mn0.1O6薄膜のMFISデバイスへの適用","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-3/?",,,2007,Sept.
"李月剛,丸山研二,鉾宏真,有本由弘,石原宏","２T型強誘電体メモリのディスターブ特性の評価","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-7/?",,,2007,Sept.
"安念一規,井端雅一,石原宏","C60フラーレンを用いた強誘電体ゲートトランジスタ","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-12/?",,,2007,Sept.
"鍾志勇,S.K.Singh,丸山研二,石原宏","A Reduced Coercive Electric Field in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition Method","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 5p-ZL-2/?",,,2007,Sept.
"陸旭兵,鉾宏真,丸山研二,石原宏","Electrical Properties of Metal-ferroelectric-Insulator-Silicon using HfTaO as Buffer Layer","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-4/?",,,2007,Sept.
"尹珠元,石原宏","Ferroelectric Characteristics of Patterned p(VDF-TrFE) Thin Films","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4a-ZL-10/?",,,2007,Sept.
"藤崎寿美子,石原宏,藤崎芳久","薄膜P(VDF-TrFE)コポリマーを用いた強誘電体キャパシタの高速動作","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4a-ZL-9/?",,,2007,Sept.
"鉾宏真,李月剛,丸山研二,石原宏","p-ch MFIS-FETとn-ch MOSFETからなる２T型FeRAMセルの電気特性評価","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-6/?",,,2007,Sept.
"高下裕一郎,井端雅一,石原宏","強誘電体ゲートカーボンナノチューブトランジスタの作製と真空中における評価","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-11/?",,,2007,Sept.
"井端雅一,高下裕一郎,石原宏","カーボンナノチューブを用いた強誘電体ゲート電界効果トランジスタのモデリング","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-10/?",,,2007,Sept.
"HIROSHI ISHIWARA","Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors","Nano Korea 2007 Sympo.","Nano Korea 2007 Sympo.",,"Vol. Room 213-1",,,2007,Aug.
"S.K.Singh,N.Menou,H.Funakubo,K.Maruyama,H.Ishiwara","(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2/Si structures",,"Appl. Phys. Lett.",,"Vol. 90",,"p. 242914 (3pages)",2007,June
"HIROSHI ISHIWARA","Current status and future prospect of FET-type ferroelectric memories","2nd Intern. Sympo. on Next Generation Non-volatile Memory Technology for Terabit Memory","2nd Intern. Sympo. on Next Generation Non-volatile Memory Technology for Terabit Memory",,"Vol. 3-3",,,2007,June
"S.K.Singh,K.Sato,K.Maruyama,H.Ishiwara","Frequency dependent polarization in pure and doped BiFeO3 thin films prepared by chemical solution deposition","19th Intern. Sympo. on Integrated Ferroelectrics","19th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 5D-209-C",,,2007,May
"S.Fujisaki,Y.Fujisaki,H.Ishiwara","Excellent ferroelectricity of thin poly (vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes","16th IEEE Intern. Sympo. on Applications of Ferroelectrics","16th IEEE Intern. Sympo. on Applications of Ferroelectrics",,"Vol. 30B-FR5-O1","No. Proc.","pp. 487-489",2007,May
"Z-Y.Zhong,S.K.Singh,K.Maruyama,H.Ishiwara","Ferroelectric properties of Mn-substituted BiFeO3 thin films on Ir electrodes","16th IEEE Intern. Sympo. on Applications of Ferroelectrics","16th IEEE Intern. Sympo. on Applications of Ferroelectrics",,"Vol. 28A-TF1-O3","No. Proc.","pp. 376-379",2007,May
"X-B.Lu,H.Hoko,K.Maruyama,H.Ishiwara","Characteristics of MFIS devices using HfSiON buffer layers","19th Intern. Sympo. on Integrated Ferroelectrics","19th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 4B-115-C",,,2007,May
"S.Fujisaki,Y.Fujisaki,H.Ishiwara","Large ferroelectricity of thin poly (vinylidene fluoride- trifluoroethylene) copolymer films suitable for non-volatile memory applications","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)",,,"No. I6.3",,2007,Apr.
"HIROSHI ISHIWARA","Recent researches for realizing high-density ferroelectric memories","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)",,,"No. I8.5",,2007,Apr.
"S.K.Singh,K.Maruyama,H.Ishiwara","The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films",,"J. Phys. D: Appl. Phys.",,"Vol. 40",,"pp. 2705-2709",2007,Apr.
"S.Fujisaki,H.Ishiwara,Y.Fujisaki","Low-voltage operation of ferroelectric poly(vinylidene fluoridetrifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes",,"Appl. Phys. Lett.",,"Vol. 90",,"p. 162902 (3pages)",2007,Apr.
"藤崎寿美子,石原 宏","VDF/TrFE共重合体を用いたMFISダイオードの低電圧動作","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-7/?",,,2007,Mar.
"井端雅一,高下裕一郎,石原宏","カーボンナノチューブを用いた強誘電体ゲート電界効果トランジスタ","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-8/?",,,2007,Mar.
"李月剛,齋藤貢一,丸山研二,鉾宏真,有本由弘,石原宏","2T型強誘電体メモリのディスターブ特性の評価","2007年(平成19年）春季第54回応用物理学関係連合講演会","2007年(平成19年）春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-6/?",,,2007,Mar.
"池田武嗣,田渕良志明,田村哲朗,鉾宏真,有本由弘,石原宏","MFIS-FETを用いたNAND型強誘電体メモリ回路における書込みディスターブ","2007年(平成19年）春季第54回応用物理学関係連合講演会","2007年(平成19年）春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-5/?",,,2007,Mar.
"岡沢昴,梅山将志,丸山研二,石原宏","低比誘電率Bi2WO6薄膜のMFISへの適用","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-10/?",,,2007,Mar.
"梅山将志,岡沢昴,石原宏,丸山研二","Bi2WO6添加Sr0.8Bi2.2Ta2O9を用いたMFIS-FETの動作特性","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-11/?",,,2007,Mar.
"高下裕一郎,白尾瑞基,矢野亜季,井端雅一,石原宏","強誘電体ゲートカーボンナノチューブトランジスタの作製と評価","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-9/?",,,2007,Mar.
"SINGH SUSHIL KUMAR,H.Ishiwara","Site engineering in chemical-solution-deposited Bi3.25La0.75Ti3O12 thin films using Ce, Zr, Mn and Si atoms",,"J. Sol-Gel Sci. Technol.",,,,,2007,Feb.
"Y.Tabuchi,S.Hasegawa,T.Tamura,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Multi-Bit Programming Technique for an MFIS-FET with a Pt/(Bi, Nd)4Ti3O12/HfO2/Si Substrate Structure",,"Integrated Ferroelectrics",,"Vol. 89",,"pp. 171-179",2007,
"S.K.Singh,K.Maruyama,H.Ishiwara","Reduced leakage current in La and Ni codoped BiFeO3 thin films",,"Appl. Phys. Lett.",,"Vol. 91",,"p. 112913 (3pages)",2007,
"kumar singh_sushil,HIROSHI ISHIWARA","Bottom electrodes dependence of ferroelectric properties in epitaxial BiFeO3/SrRuO3/SrTiO3 structures",,"Integrated Ferroelectrics",,"Vol. 87",,"pp. 42-49",2007,
"H.Ishiwara","Recent progress in ferroelectric memory technology",,"8th Intern. Conf. on Solid-State and Integrated Circuit Technology",,"Vol. Proc. Part 2","No. C3.8","pp. 713-716",2006,Oct.
"H.Ishiwara","Recent progress in ferroelectric memory technology","8th Intern. Conf. on Solid-State and Integrated Circuit Technology","8th Intern. Conf. on Solid-State and Integrated Circuit Technology",,,"No. C3.8 Proc. Part 2","pp. 713-716",2006,Oct.
"S.K.Singh,K.Sato,K.Maruyama,H.Ishiwara","Cr-doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition",,"Jpn. J. Appl. Phys.",,"Vol. 45, Part 2","No. 41","pp. L1087-L1089",2006,Oct.
"S.K.Singh,H.Ishiwara","Enhanced polarization and reduced leakage current in BiFeO3 thin films fabricating by chemical solution deposition",,"J. Appl. Phys.",,"Vol. 100","No. 6","pp. 064102",2006,Sept.
"S.K.Singh,Y-K.Kim,H.Funakubo,H.Ishiwara","Epitaxial BiFeO3 multiferroic thin films fabricated by chemical solution deposition","IUMRS Intern. Conf. in Asia","IUMRS Intern. Conf. in Asia",,"Vol. 6-O-15",,,2006,Sept.
"Byung-Eun Park,Hiroshi Ishiwara","Characterization of Polyvinylidene fluoride thin films by sol-gel method",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 30p-V-20/II",,,2006,Aug.
"梅山将志,石原宏,丸山研二,田村哲朗","Pt/Sr0.8Bi2.2Ta2O9/HfO2/Si構造MFISダイオードにおけるバッファ層膜厚の最適化",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31a-V-5/II",,,2006,Aug.
"齋藤貢一,石原宏","シリケート添加によるSBT薄膜の比誘電率制御",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31a-V-4/II",,,2006,Aug.
"鉾宏真,田渕良志明,丸山研二,石原宏","SrBi2Ta2O9とHfSiONを強誘電体膜とバッファ層に用いたMFIS-FETの特性評価",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31a-V-6/II",,,2006,Aug.
"田渕良志明,長谷川聡志,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","弱電界におけるPt/(Bi,Nd)4Ti3O12/Ptキャパシタの疲労現象",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31p-V-15/II",,,2006,Aug.
"T.Furukawa,T.Kuroiwa,T.Sato,Y.Fujisaki,H.Ishiwara","Leakage current characteristics of Pt/Bi4-xLaxTi3O12/Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films",,"J. Appl. Phys.",,"Vol. 100","No. 1","pp. 014108",2006,July
"K.Takahashi,K.Aizawa,H.Ishiwara","Optimum ferroelectric film thickness in metal-ferroelectric-insulator -semiconductor structures composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si",,"Jpn. J. Appl. Phys.",,"Vol. 45, Part 1","No. 6A","pp. 5098-5101",2006,June
"S.K.Singh,H.Ishiwara,K.Maruyama","Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition",,"Appl. Phys. Lett.",,"Vol. 88","No. 26","pp. 262908 (3 pages)",2006,June
"石原宏","トランジスタ型強誘電体メモリの現状と展望",,"応用物理",,"Vol. 75","No. 5","pp. 546-552",2006,May
"S.K.Singh,H.Ishiwara","Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition",,"Spring Meeting of Mater. Res. Soc. (Sympo. G; Science and Technology of Nonvolatile Memories)",,,"No. G3.3",,2006,Apr.
"S.K.Singh,H.Ishiwara","Doping effect of rare earth ions to electric properties of BiFeO3 thin films fabricated by chemical solution deposition",,"Jpn. J. Appl. Phys.",,"Vol. 45Part 1","No. 4B","pp. 3194-3197",2006,Apr.
"H.Ishiwara,S.K.Singh","Characteristics of BiFeO3 thin films prepared by chemical solution deposition",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 9-561-I",,,2006,Apr.
"H.Ishiwara","Ferroelectric FET Memory",,"ITRS workshop on Assessment of Options for Emerging Research Memory Devices",,,"No. 2-4",,2006,Apr.
"S.K.Singh,Y-K.Kim,H.Kuwabara,H.Funakubo,H.Ishiwara","Strain effect due to the bottom electrodes in epitaxial BiFeO3 films formed by chemical solution deposition",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 9-281-C",,,2006,Apr.
"Y.Tabuchi,S.Hasegawa,T.Tamura,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Multi-bit programming for MFIS-FET using Pt/(Bi,Nd)4Ti3O12/HfO2/n-type Si structures",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 1-441-C",,,2006,Apr.
"S.K.Singh,H.Ishiwara,K.Maruyama","Site-engineering of BiFeO3 thin films for obtaining ferroelectric properties at room temperature",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 6A-101-C",,,2006,Apr.
"S.K.Singh,H.Ishiwara","Electrical properties of Pt/Bi3.45La0.75Ti3O12/Pt thin film capacitors tailored by cerium doping",,"J. Mater. Res.",,"Vol. 21","No. 4","pp. 988-994",2006,Apr.
"鉾宏真,田渕良志明,田村哲朗,丸山研二,石原宏","HfSiON膜バッファ層を用いたPt/(Bi,La)4Ti3O12/HfSiON/Si構造の強誘電体ゲートFETの特性",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 25p-S-7/II",,,2006,Mar.
"林大祐,S.K.Singh,大島憲昭,丸山研二,石原宏","PtならびにRu電極上へのMnドープBiFeO3膜の形成",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 26p-S-5/II",,,2006,Mar.
"田渕良志明,長谷川聡志,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","MFIS-FETのメモリウィンドウ測定による分極状態の評価",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 25p-S-8/II",,,2006,Mar.
"小原秀一郎,田村哲朗,丸山研二,石原宏","Sr2(Ta,Nb)2O7/HfO2/Si構造デバイスの作製と評価",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 25p-S-12/II",,,2006,Mar.
"S.K.Singh,H.Ishiwara","Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated R-plane sapphire substrates",,"J. Electrocramics",,"Vol. 16",,"pp. 553-556",2006,
"S.K.Singh,K.Maruyama,H.Ishiwara","Room temperature ferroelectric properties of SrBi2Ta2O9- and (Bi, La)4Ti3O12-incorporated BiFeO3 thin films",,"Integrated Ferroelectrics",,"Vol. 84",,"pp. 115-120",2006,
"Y.Tabuchi,K. Aizawa,T. Tamura,K. Takahashi,H. Hoko,K. Kato,Y. Arimoto,H. Ishiwara","Characterization of (Bi,Nd)4Ti3O12/HfO2/p-Type Si Structures for MFIS-FeRAM Application",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 211-218",2006,
"kumar singh_sushil,HIROSHI ISHIWARA","Excellent room-temperature ferroelectricity in Mn-substituted BiFeO3 thin films formed by chemical solution deposition",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 933",,"p. G03-03 (5pages)",2006,
"kumar singh_sushil,HIROSHI ISHIWARA","Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films",,"Solid State Communications",,"Vol. 140",,"pp. 430-434",2006,
"kumar singh_sushil,S.K.Singh H.Ishiwara","Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated R-plane sapphire substrates",,"J. Electrocramics",,"Vol. 16",,"pp. 553-556",2006,
"S.K.Singh,H.Ishiwara","Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route",,"Thin Solid Films",,"Vol. 497",,"pp. 90-95",2006,
"S.K.Singh,H.Ishiwara","Enhanced electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films",,"Mater. Res. Soc. Symp. (Ferroelectric Thin Films XIII) Proc.",,"Vol. 902E",,"pp. T03-52.1- T03-52.6",2006,
"S.K.Singh,Y-K.Kim,H.Funakubo,H.Ishiwara","Epitaxial BiFeO3 thin films fabricated by chemical solution deposition",,"Appl. Phys. Lett.",,"Vol. 88","No. 16","pp. 162904 (3pages)",2006,
"H.Ishiwara","Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 3-13",2006,
"S.K.Singh,H.Ishiwara","Defect engineering for control of polarization fatigue in Bi3.25La0.75Ti3O12 thin film capacitors",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 25-35",2006,
"H.Hoko,C.Aoki,Y.Tabuchi,T.Tamura,K.Maruyama,Y.Arimoto,H.Ishiwara","Electrical properties of Pt/BLT/HfSiON/Si structure for 1T-type ferroelectric memory",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 105-111",2006,
"Y.Tabuchi,K.Aizawa,T.Tamura,K.Takahashi,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Characterization of (Bi,Nd)4Ti3O12/HfO2/p-type Si structures for MFIS-FeRAM application",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 211-218",2006,
"S.K.Singh,R.Ueno,H.Funakubo,H.Uchida,S.Koda,H.Ishiwara","Dependence of ferroelectric properties on thickness of BiFeO3 thin films fabricated by chemical solution deposition",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 12","pp. 8525-8527",2005,Dec.
"S.K.Singh,H.Ishiwara","Improved insulating properties in La-doped BiFeO3 films fabricated by chemical solution deposition",,"Fall Meeting of Mater. Res. Soc. (Sympo. U ; Multiferroic materials)",,,"No. U5.7",,2005,Nov.
"S.K.Singh,H.Ishiwara","Enhanced electrical properties in Mn-doped Bi3.35La0.75Ti3O12 thin film",,"Fall Meeting of Mater. Res. Soc. (Sympo. T ; Ferroelectric Thin Films XIII)",,,"No. T3.52",,2005,Nov.
"林大祐,S. K. Singh,小菅博明,大島憲明,石原宏","CVD法により形成したRu電極を用いたBiFeO3キャパシタの評価",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9p-L-12",,,2005,Sept.
"長谷川聡史,田渕良志明,田村哲朗,加藤一実,有本由弘,石原宏","Pt/BNT((Bi,Nd)4Ti3O12)/HfO2/Siキャパシタのメモリ特性におけるBNT膜厚の影響",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9a-L-8",,,2005,Sept.
"S.Ohara,K.Aizawa,H.Ishiwara","Ferroelectric properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si structures",,"Jpn. J. Appl. Phys",,"Vol. 44, Part 1","No. 9A","pp. 6644-6647",2005,Sept.
"S.K.Singh,H.Ishiwara","Bismuth ferrite thin films for advanced FeRAM devices",,"Intern. Conf. on Solid State Devices and Materials",,"Vol. H-8-3",,"pp. Ext. Abstracts pp.1036-1037",2005,Sept.
"小原秀一郎,田村哲朗,石原宏","Pt/(Sr0.8Bi2.2Ta2)x(Bi1.05FeO3)(1-x)/Pt構造デバイスの評価",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9a-L-6",,,2005,Sept.
"Y.Tabuchi,S.Hasegawa,T.Tamura,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Multi-bit programming for 1T-FeRAM by local polarization method",,"Intern. Conf. on Solid State Devices and Materials",,"Vol. H-8-4",,"pp. Ext. Abstracts pp.1038-1039",2005,Sept.
"田渕良志明,長谷川聡史,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","(Bi,Nd)4Ti3O12/HfO2/Si構造を用いたMFIS-FETの多値メモリ化の検討",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9a-L-7",,,2005,Sept.
"K.Takahashi,K.Aizawa,B-E.Park,H.Ishiwara","Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 8","pp. 6218-6220",2005,Aug.
"K.Aizawa,H.Ishiwara","Reduction of pyrochlore phase and pronounced improvemrnt of ferroelectric properties in ultrathin SrBi2Ta2O9 films derived from Bi-rich sol-gel solution",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 8","pp. 6221-6223",2005,Aug.
"S.K.Singh,H.Ishiwara","Reduced Leakage Current in BiFeO3 Thin Films on Si Substrates Formed by a Chemical Solution Method",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 2","No. 23","pp. L734-L736",2005,May
"S. K. Singh,H. Ishiwara","Defect engineering for control of polarization fatigue in Bi4-XLaXTi3O12 film capacitors",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-4-C",,2005,Apr.
"H. Ishiwara","Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-1-I",,2005,Apr.
"H-S.Kim,S.Yamamoto,T.Ishikawa,T.Fuchikami,H.Ohki,H.Ishiwara","Fabrication and characterization of 1k-bit 1T2C-type ferroelectric memory cell array",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 4B","pp. 2715-2721",2005,Apr.
"S. Ohara,K. Aizawa,H. Ishiwara","Fabrication and characterization of metal-ferroelectric- insulator-semiconductor devices with Pt/Pb5Ge3O11/HfO2/Si structures",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 2-14-C",,2005,Apr.
"Y. Tabuchi,K. Aizawa,T. Tamura,K. Takahashi,H. Hoko,K. Kato,Y. Arimoto,H. Ishiwara","Characterization of (Bi,Nd)4Ti3O12/HfO2/p-type Si structures for MFIS-FeRAM application",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-33-P",,2005,Apr.
"石原宏","トランジスタ型強誘電体メモリ開発の現状と将来展望",,"電子情報通信学会誌",,"Vol. 88","No. 4","pp. 266-271",2005,Apr.
"H. Hoko,C. Aoki,Y. Tabuchi,T. Tamura,K. Maruyama,Y. Arimoto,H. Ishiwara","Electrical properties of Pt/BLT/HfSiON/Si structure for 1T-type ferroelectric memory",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-20-P",,2005,Apr.
"S. K. Singh,H. Funakubo,H. Uchida,H. Ishiwara","Structural and electrical properties of BiFeO3 thin films",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 7-5-C",,2005,Apr.
"林大祐,小菅博明,大島憲昭,石原宏","CVD Ru薄膜を下部電極として用いたMo添加BLT強誘電体キャパシタの評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 29a-P1-1",,,2005,Mar.
"H.Ohki,Y.Fujisaki,H.Ishiwara","Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 ferroelectric thin films",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 3","pp. 1329- 1332",2005,Mar.
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Fatigueless ferroelectric capacitors with ruthenium bottom and top electrodes formed by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 2","No. 12","pp. L378-L380",2005,Mar.
"高橋憲弘,會澤康治,田村哲朗,有本由弘,石原宏","(Bi,La)4Ti3O12/CVD-HfO2/p-Si 構造の作製と電気的特性評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-3",,,2005,Mar.
"會澤康治,田村哲朗,有本由弘,石原宏","SBT/HfO2/Si構造デバイスにおけるデータ保持特性の温度依存性",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-2",,,2005,Mar.
"小原秀一郎,會澤康治,石原宏","Pt/Pb5Ge3O11/Pt構造とPt/Pb5Ge3O11/HfO2/Si構造デバイスの評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-4",,,2005,Mar.
"長谷川聡史,田渕良志明,加藤一実,田村哲朗,有本由弘,石原宏","(Bi,Nd)4Ti3O12/CVD HfO2構造を用いたMFISダイオードの作製と評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-9",,,2005,Mar.
"田渕良志明,會澤康治,田村哲朗,高橋憲弘,鉾宏真,加藤一実,有本由弘,石原宏","(Bi,Nd)4Ti3O12/HfO2/p-type Si 構造を用いたMFIS-FETの特性評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-12",,,2005,Mar.
"H.Ohki,X.Wang,H.Ishiwara","Improvement of ferroelectric properties in Mo-substituted Bi3.35La0.75Ti3O12 films by optimization of heating rate",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 2","pp. 964- 967",2005,Feb.
"S.Kikuchi,H.Ishiwara","Improvement of ferroelectric properties in RF-magnetron- sputtered SrBi2Ta2O9 thin films by addition of Si atoms",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 2","No. 4","pp. L161- L163",2005,Jan.
"B-E.Park,K.Takahashi,H.Ishiwara","Fabrication and electrical properties of Pt/ (Bi,La)4Ti3O12/HfO2/Si structures",,"J. Korean Phys. Soc.",,"Vol. 46","No. 1","pp. 346-349",2005,Jan.
"S.Yamamoto,T.Ishikawa,T.Fuchikami,H-S.Kim,K.Aizawa,B-E.Park,T.Furukawa,H.Ohki,S.Kikuchi,H.Hoko,H.Ishiwara","Fabrication of 1k-bit 1T2C-type ferroelectric memory cell array",,"Integrated Ferroelectrics",,"Vol. 67",,"pp. 281-286",2005,
"Y.Fujisaki,H.Ishiwara","Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories)",,"Mater. Res. Soc. Symp. (Materials and Processes for Nonvolatile Memories) Proc.",,"Vol. 830",,"pp. D2.1.1- D2.1.12",2005,
"K.Aizawa,S.Kobayashi,H.Ishiwara,K.Suzuki,K.Kato","Ferroelectric-gate field effect transistors using (Y,Yb)MnO3/Y2O3/Si(111) structures for 1T-type FeRAMs",,"Integrated Ferroelectrics",,"Vol. 65",,"pp. 169-174",2005,
"X.Wang,H.Ishiwara","Properties of ferroelectric SrBi2Ta2O9-Bi4Ti3O12 thin films derived by the sol-gel method",,"J. Crystal Growth",,"Vol. 285",,"pp. 103-110",2005,
"K.Kato,K.Suzuki,K.Tanaka,D.Fu,K.Nishizawa,T.Miki,H.Ishiwara","Ferroelectric characteristics of silicate-bound (Bi,La)4Ti3O12 thin films",,"Appl. Phys. A",,"Vol. 80",,"pp. 271-273",2005,
"Y.Tabuchi,B-E.Park,K.Aizawa,Y.Kawashima,K.Takahashi,K.Kato,Y.Arimoto,H.Ishiwara","Formation of ferroelectric (Bi,Nd)4Ti3O12 thin films on HfO2/Si(100) structures for MFIS-type ferroelectric memory applications",,"Integrated Ferroelectrics",,"Vol. 65",,"pp. 125-134",2005,
"H-S.Kim,S.Yamamoto,H.Ishiwara","Improvement of data readout disturbance effect in 1T2C-type ferroelectric memory",,"Integrated Ferroelectrics",,"Vol. 67",,"pp. 271-280",2005,
"S.K.Singh,H.Funakubo,H.Uchida,H.Ishiwara","Structural and electrical properties of BiFeO3 thin films",,"Integrated Ferroelectric",,"Vol. 76",,"pp. 139-146",2005,
"K.Aizawa,Y.Kawashima,H.Ishiwara","Long time data retention and a mechanism in ferroelectric-gate field effect transistors with HfO2 buffer layer",,"Mater. Res. Soc. Symp. (Materials and Processes for Nonvolatile Memories) Proc.",,"Vol. 830",,"pp. D2.9.1- D2.9.6",2005,
"K.Takahashi,B-E.Park,K.Aizawa,H.Ishiwara","30-day-long data retention in ferroelectric-gate FET’s with HfO2 buffer layers",,"Intern. Conf. on Solid State Devices and Materials, Tokyo",,,"No. D-1-2","pp. 52-53",2004,
"石原宏","強誘電体メモリーの新展開 第1章 強誘電体メモリーの現状と次世代型への期待",,"シーエムシー出版","シーエムシー出版",,,,2004,
"石原宏 監修 ","強誘電体メモリーの新展開",,"シーエムシー出版","シーエムシー出版",,,,2004,
"石原宏","トランジスタ型強誘電体メモリの新展開",,"第66回半導体･集積回路技術シンポジウム講演論文集","第66回半導体･集積回路技術シンポジウム講演論文集",,,"pp. 46-49",2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,加藤一実,有本由弘,石原宏","(Bi,Nd)4Ti3O12/HfO2/Si(100) 構造の作製と評価",,"電子情報通信学会技術研究報告","電子情報通信学会技術研究報告",,"No. SDM2003-232",,2004,
"Y. Arimoto,H. Ishiwara","Current status of ferroelectric random-access memory",,"MRS Bulletin","MRS Bulletin","Vol. 29","No. 11","pp. 823-828",2004,
"石原宏","次世代強誘電体メモリへの期待",,"化学工業","化学工業","Vol. 55","No. 1","pp. 20-25",2004,
"H.Ishiwara,M.Okuyama,Y.Arimoto eds.","Ferroelectric Random Access Memories - Fundamentals and Applications",,"Springer-Verlag","Springer-Verlag",,,,2004,
"T.Kijima,H.Ishiwara","“Part I, Novel Si-substituted ferroelectric films”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto",,"Springer-Verlag","Springer-Verlag",,,"pp. 17-30",2004,
"H.Ishiwara","“Part IV, The FET-type FeRAM”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto",,"Springer-Verlag","Springer-Verlag",,,"pp. 233-251",2004,
"タンブンイー,井関邦江,大木博,藤崎芳久,石原宏","Radical-Si3N4/高誘電率バッファー層を用いたMFIS?FETの作製と評価",,"第51回応用物理学関連連合講演会",,,"No. 31ｐ-ZL-3",,2004,
"キムヒンス,山本修一郎,石原宏","1T2C型強誘電体メモリアレイにおけるV/4ルールデータ書き込み法の提案",,"第51回応用物理学関連連合講演会",,,"No. 31p-ZL-2",,2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,加藤一実,有本由弘,石原宏","(Bi,Nd)4Ti3O12/HfO2/Si(100)構造MFIS型強誘電体メモリの作製とデータ保持特性の評価",,"第51回応用物理学関連連合講演会",,,"No. 31a-ZL-1",,2004,
"會澤康治,川島良仁,高橋憲弘,朴炳垠,石原宏","SBT/HfO2構造を用いたMFIS DiodeおよびFETの作製と評価",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-19",,2004,
"高橋憲弘,朴炳垠,川島良仁,田渕良志明,會澤康治,石原宏","(Bi,La)4Ti3O12/HfO2構造を用いたMFISダイオードおよび１T型FETの電気的特性評価",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-18",,2004,
"星出裕亮,具本宰,有本由弘,石原宏","均一なキャパシタ特性を持つ1T2C型強誘電体メモリの作製",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-17",,2004,
"藤崎芳久,井関邦江,石原宏","減圧仮焼成プロセスによるゲルゾルBLT薄膜の特性改善（２）",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-10",,2004,
"大木博,石原宏","Si添加Bi3.35La0.75(Ti1-xMox)3O12強誘電体薄膜の特性評価",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-4",,2004,
"大木博,Xusheng Wang,石原宏","MoドープBi4-xLaxTi3O12薄膜の強誘電体特性に及ぼす昇温レートの効果",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-3",,2004,
"菊池真,石原宏","FRマグネトロンスパッタ法によるSi添加SiBi2Ta2O9強誘電体薄膜の作製（３）",,"第51回応用物理学関連連合講演会",,,"No. 30a-ZL-3",,2004,
"高橋憲弘,會澤康治,田村哲朗,有本由弘,石原宏","(Bi,La)4Ti3O12/CVD HfO2構造を用いたMFISダイオードの電気的特性評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-10",,2004,
"會澤康治,高橋憲弘,田村哲朗,有本由弘,石原宏","CVD HfO2薄膜をバッファ層に用いたSBT/HfO2/p-Si構造の作製と評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-8",,2004,
"キムヒンス,山本修一郎,石川徹,石原宏","1T2C型強誘電体メモリアレイの作製と評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-7",,2004,
"B-E.Park,K.Takahashi,H.Ishiwara","Five-day-long ferroelectric memory effect in Pt/(Bi,La)4Ti3O12/HfO2/Si structures",,"Appl. Phys. Lett.",,"Vol. 85","No. 19","pp. 4448-4450",2004,
"K.Aizawa,B-E.Park,Y.Kawashima,K.Takahashi,H.Ishiwara","Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field effect transistors",,"Appl. Phys. Lett.",,"Vol. 85","No. 15","pp. 3199-3201",2004,
"Y.Fujisaki,K.Iseki,H.Ishiwara","Long retention performance of a MFIS device achieved by introducing high-k Al2O3/Si3N4/Si buffer layer",,"Mater. Res. Soc. Sympo. Proc. (Ferro- electric Thin Films XII)",,"Vol. 784",,"pp. C(E)9.6.1-C(E)9.6.11",2004,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Fabrication of Ru/Bi4-XLaX Ti3O12/Ru ferroelectric capacitor structure using a Ru film deposited by metalorganic chemical vapor deposition",,"Mater. Res. Soc. Sympo. Proc. (Ferroelectric Thin Films XII)",,"Vol. 784",,"pp. C7.7.1-C7.7.6",2004,
"HIROSHI ISHIWARA","Recent progress in FET-type ferroelectric memories",,"Proc. of 1^st^ Intern. Sympo. on Dielectrics for Nanosystems : Materials Science, Processing, Reliability, and Manufacturing (Electrochem. Soc. Pennington, 2004)",,,,"pp. 195-205",2004,
"K.Aizawa,H.Ishiwara","Low voltage operation of ferroelectric capacitors using Sr-deficient and praseodymium-substituted strontium bismuth tantalete ultra thin films",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 211-214",2004,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Leakage current suppression of Pt/Bi4-XLaXTi3O12/Ru capacitors by post-annealing of Ru films",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 171-176",2004,
"Y.Kawashima,H.Ishiwara","Formation of ultra thin SrBi2Ta2O9 films using protective layers",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 155-161",2004,
"B-E.Park,H.Ishiwara","Fabrication and characterization of (Bi,La)4Ti3O12 films using LaAlO3 buffer layers for MFIS structures",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 141-147",2004,
"T.Tamura,H.Hoko,Y.Arimoto,H.Ishiwara","Fabrication of sol-gel thin films of silicate- doped PZT",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 105-107",2004,
"H.Ohki,X.Wang,H.Ishiwara","Ferroelectric properties of Mo-doped Bi4-XLaXTi3O12 films",,"Integrated Ferroelectrics",,"Vol. 61",,"pp. 37-42",2004,
"S.Kim,S.Yamamoto,H.Ishiwara","Improved data disturbance effects in 1T2C-type ferroelectric memory array",,"Jpn. J.Appl. Phys.",,"Vol. 53","No. 5A","pp. 2558-2563",2004,
"K.Aizawa,B-E.Park,Y.Kawashima,K.Takahashi,H.Ishiwara","Effect of Ferroelectric/HfO2/Si Structures on Electrical Properties of Ferroelectric-gate FETs",,"Fall Meeting of Mater. Res. Soc. (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston",,,"No. D2.9",,2004,
"Y.Fujisaki,H.Ishiwara","Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories)",,"Fall Meeting of Mater. Res. Soc. (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston",,,"No. D2.1",,2004,
"S.K.Singh,H.Ishiwara","Thickness dependence properties of Bi3.25La0.75Ti3O12 thin film capacitors",,"National Seminar on Ferroelectrics and Dielectrics, Delhi",,,"No. 67","pp. 159-162",2004,
"HIROSHI ISHIWARA","Recent progress in FET-type ferroelectric memories",,"1^st^ Intern. Sympo. on Dielectrics for Nanosystems : Materials Science, Processing, Reliability, and Manufacturing in 206^th^ Meeting of Electrochem. Soc. Honolulu",,,"No. 870",,2004,
"H-S.Kim,S.Yamamoto,T.Ishikawa,H.Ishiwara","Fabrication and characteriza- tion of 1k-bit 1T2C-type ferroelectric memory cell array",,"Intern. Conf. on Solid State Devices and Materials, Tokyo",,,"No. D-1-3","pp. 54-55",2004,
"HIROSHI ISHIWARA","Current status and prospect of FET-type ferroelectric memories",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 5-04-I",,2004,
"K.Takahashi,B-E.Park,H.Ishiwara","Electrical properties of Pt/SrBi2Ta2O9/HfO2/Si structure for a 1T-type ferroelectric memory",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-24-P",,2004,
"B-Y.Tan,K.Iseki,H.Ohki,Y.Fujisaki,H.Ishiwara","Al2O3 hydrogen barrier encapsulation layer for FeRAM",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-20-P",,2004,
"Y.Tabuchi,B-E.Park,K.Takahashi,K.Kato,Y.Arimoto,H.Ishiwara","Formation of ferroelectric (Bi,Nd)4Ti3O12 thin films on HfO2/Si(100) structures for MFIS-type ferroelectric memory applications",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-19-P",,2004,
"H-S.Kim,S.Yamamoto,H.Ishiwara","Improvement of data readout disturbance effects in 1T2C-type ferroelectric memory array",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 5-02-P",,2004,
"S.Yamamoto,T.Ishikawa,T.Fuchikami,H-S.Kim,K.Aizawa,B-E.Park,T.Furukawa,H.Ohki,S.Kikuchi,H.Hoko,H.Ishiwara","Fabrication of 1k-bit 1T2C-type ferroelectric memory cell array",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 5-01-P",,2004,
"C.Aoki,H.Hoko,B-E.Park,H.Ishiwara","Electrical properties of HfxAlyO/Si and Bi3.45La0.75Ti3O12/HfxAlyO/Si structures",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 12-18-C",,2004,
"K.Aizawa,S.Kobayashi,H.Ishiwara,K.Suzuki,K.Kato","Ferroelectric-gate field effect transistors using (Y,Yb)MnO3/Y2O3/Si(111) structures for 1T-type FeRAMs",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-10-C",,2004,
"B-J.Koo,Y.Hoshide,H.Ishiwara","Long-term retention characteristics of 1T2C-type ferroelectric memory",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-06-C",,2004,
"B-E.Park,K.Takahashi,H.Ishiwara","Fabrication and characterization of Pt/(Bi,La)4Ti3O12/ HfO2/Si(100) structures",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 12-03-P",,2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","(Bi, Nd)4Ti3O12/HfO2/Si(100)構造MFIS型強誘電体メモリの特性評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-9",,2004,
"青木千恵子,鉾宏真,朴炳垠,石原宏","HfO2系非晶質バッファ層を用いたMFIS(metal-ferroelectric-insulator-semiconductor)構造の特性",,"第51回応用物理学関連連合講演会",,,"No. 31ｐ-ZL-1",,2004,
"青木千恵子,石原宏,鉾宏真","HfSiON非晶質バッファ層を用いたMFIS型構造の特性",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-2",,2004,
"金?秀,山本修一郎,石川徹,大木博,石原宏","1T2C型強誘電体メモリアレイの作製と評価",,"第65回応用物理学会学術講演会講演予稿集",,"Vol. 2",,"pp. 496",2004,
"川島良仁,石原宏","超臨界二酸化炭素を利用した強誘電体薄膜の作製",,"第64回応用物理学会学術講演会",,,"No. 30p-V-1",,2003,
"菊地真,石原宏","RFマグネトロンスパッタ法によるSi添加SrBi2Ta2O9強誘電体薄膜の加熱基板上への成膜",,"第64回応用物理学会学術講演会",,,"No. 30a-V-11",,2003,
"會澤康治,石原宏","Bi過剰前駆体溶液を用いたゾルゲルSBT極薄膜の形成と分極特性",,"第64回応用物理学会学術講演会",,,"No. 30a-V-6",,2003,
"山本修一郎,石原宏","1T2C型強誘電体メモリアレイの読み出し回路の設計と評価",,"第64回応用物理学会学術講演会",,,"No. 30p-T-17",,2003,
"具本宰,星出裕亮,石原宏","BLT薄膜を用いた1T2C型強誘電体メモリのデータ保持特性",,"第64回応用物理学会学術講演会",,,"No. 30p-T-16",,2003,
"金泫秀,山本修一郎,石原宏","1T2C型強誘電体メモリセルに対する読み出しディスターブの低減法",,"第64回応用物理学会学術講演会",,,"No. 30p-T-15",,2003,
"タンブン イー,斉藤亮平,山本修一郎,石原宏","強誘電体を用いた不揮発性CMOSラッチ回路の特性評価",,"第64回応用物理学会学術講演会",,,"No. 30p-T-14",,2003,
"藤崎芳久,井関邦江,石原宏","Pt/LSMCD-BLT/ALD-ALD/Al2O3/Radical-Si3N4/Siの長期データ保持特性",,"第64回応用物理学会学術講演会",,,"No. 30p-T-4",,2003,
"石川徹,山本修一郎,石原宏","SPICEによる1T2C型強誘電体メモリアレイの動作解析",,"第50回応用物理学関係連合講演会",,,"No. 30p-R-1",,2003,
"山本修一郎,石原宏","強誘電体を用いたCMOS不揮発性ラッチ回路の消費電力の評価",,"第50回応用物理学関係連合講演会",,,"No. 30a-R-11",,2003,
"金泫季,山本修一郎,石原宏","1T2C型強誘電体メモリアレイに対するデータ書き込みディスターブの低減法",,"第50回応用物理学関係連合講演会",,,"No. 30a-R-10",,2003,
"具本宰,石原宏","BLT薄膜を用いたゲート接続型1T2C強誘電体メモリの特性",,"第50回応用物理学関係連合講演会",,,"No. 30a-R-9",,2003,
"朴炳垠,石原宏","BLT/LaAlO3/Si(100)キャパシタの作製と保持特性",,"第50回応用物理学関係連合講演会",,,"No. 30a-R-5",,2003,
"小林宗太,朴炳垠,會澤康治,石原 宏","MBE法で作製したLaALO3/Si構造を用いたMFISダイオードの作製と電気的特性",,"第50回応用物理学関係連合講演会",,,"No. 30a-R-2",,2003,
"藤崎芳久,井関邦江,石原宏","Radical-Si3N4/ALD-Al2O3high-k膜のポスト窒化による特性改善",,"第50回応用物理学関係連合講演会",,,"No. 29p-ZX-21",,2003,
"藤崎芳久,井関邦江,石原宏","減圧仮焼成プロセスによるゾルゲルBLT薄膜の特性改善",,"第50回応用物理学関係連合講演会",,,"No. 29a-R-8",,2003,
"井関邦江,藤崎芳久,渡辺隆之,舟窪浩,石原宏","Bi堆積層を用いたゾルゲル(Bi,La)4Ti3O12薄膜の結晶性制御",,"第50回応用物理学関係連合講演会",,,"No. 29a-R-7",,2003,
"井出本康,小浦延幸,石原宏,C.-K.Loong,J.W.Richardson,Jr.","Bi3.25La0.75(Ti,Si)3O12の熱処理による結晶構造、物性と強誘電体特性の関係",,"第50回応用物理学関係連合講演会",,,"No. 29a-R-6",,2003,
"井出本康,磯英治,菊池淳,小浦延幸,石原宏,C.-K.Loong,J.W.Richardson,Jr.","(Bi,La)4+x(Ti,Si)3-yO12の結晶構造、物性と強誘電体特性の関係",,"第50回応用物理学関係連合講演会",,,"No. 29a-R-5",,2003,
"大木博,石原宏","Pt/CrTiN/TiN/Ti下部電極上の Bi4-xLaxTi3O12薄膜に及ぼすFlash-Annealingの効果",,"第50回応用物理学関係連合講演会",,,"No. 29a-R-3",,2003,
"加藤一実,鈴木一行,符徳勝,西澤かおり,三木健,石原宏","Bi4Ti3O12強誘電体薄膜の構造と特性に対するSiO2系添加物の効果",,"第50回応用物理学関係連合講演会",,,"No. 28a-R-11",,2003,
"井出本康,小浦延幸,石原宏,J.W.Richardson,Jr.,C.-K.Loong","Bi4(Ti,Si)3O12の結晶構造、物性と強誘電体特性の関係および熱処理効果",,"第50回応用物理学関係連合講演会",,,"No. 28a-R-1",,2003,
"菊地真,石原宏","RFマグネトロンスパッタ法によるSi添加SrBi2Ta2O9強誘電体薄膜の作製(2)",,"第50回応用物理学関係連合講演会",,,"No. 27p-Q-12",,2003,
"會澤康治,石原宏","Pr-SrBi2Ta2O9薄膜の作製と電気的特性評価",,"第50回応用物理学関係連合講演会",,,"No. 27p-Q-10",,2003,
"川島良仁,石原宏","保護膜被覆によるSrBi2Ta2O9の薄膜化",,"第50回応用物理学関係連合講演会",,,"No. 27p-Q-8",,2003,
"岡本大輔,會澤康治,石原宏","Sr0.8Bi2.2Ta2.0O9キャパシタのRTA昇温レート依存性",,"第50回応用物理学関係連合講演会",,,"No. 27p-Q-6",,2003,
"井出本康,高橋智之,小浦延幸,石原宏,C.-K.Loong,J.W.Richardson,Jr.","Sr1-xBi2+x(Ta,Si)2O9-■δ(X=0,0.2)の結晶構造、物性と強誘電体特性",,"第50回応用物理学関係連合講演会",,,"No. 27p-Q-4",,2003,
"古川泰助,黒岩丈晴,藤崎芳久,佐藤剛,石原宏","MOCVD法によるＲu膜の強誘電体メモリ電極への適用検討(?)",,"第50回応用物理学関係連合講演会",,,"No. 27p-R-1",,2003,
"松本貴希,石原宏","ゲートトンネルリング電流に基づくSOIデバイス特性の変化",,"第64回応用物理学会学術講演会",,,"No. 31p-A-11",,2003,
"Y.Kawashima,H.Ishiwara","A novel chemical solution deposition method suitable for high-yield fabrication of 50-nm-thick SrBi2Ta2O9 capacitors",,"Intern. Conf. on Solid State Devices and Materials",,,"No. B-1-5",,2003,
"B-E.Park,H.Ishiwara","Effect of temperature raising rate in crystallization process on electrical properties of (Bi,La)4Ti3O12 films derived by sol-gel method",,"10th European Meeting on Ferroelectricity",,,"No. S18-A04",,2003,
"K.Aizawa,H.Ishiwara","Low voltage operation of ferroelectric capacitors using Sr1-XPr2X/3Bi2Ta2O9 thin films",,"10th European Meeting on Ferroelectricity",,,"No. S18-A01",,2003,
"Y.Kawashima,H.Ishiwara","Formation of ultrathin SrBi2Ta2O9 films using protective layers",,"10th European Meeting on Ferroelectricity",,,"No. S18-11",,2003,
"B-E.Park,H.Ishiwara","Fabrication and characterization of (Bi,La)4Ti3O12 films using LaAlO3 buffer layers for MFIS structures",,"10th European Meeting on Ferroelectricity",,,"No. S18-8",,2003,