"Eisuke Tokumitsu,Tomohiro Oiwa,Yohei Kondo,Masaru Senoo","All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function","15th Workshop on Dielectrics in Microelectronics(WoDiM 2008)",,,,,,2008,June
"E.Tokumitsu,H.Shibata,M.Senoo","Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel","the 14th International Workshop on Oxide Electronics(WOE14)",,,,"No. P?-06-124",,2007,Oct.
"Eisuke Tokumitsu,Masaru Senoo,Etsu Shin","Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation","Materials Research Society Symp.","Materials Research Society Symp. Proc.",,"Vol. 902E",,"pp. T10-54.1-54.6",2006,July
"Eisuke Tokumitsu,Etsu Shin,Masaru Seno","ITO-channel thin film transistor with (Ba, Sr)TiO3 gate insulator","European Materials Research Society(E-MRS) IUMRS ICEM 2006 Spring Meeting",,,,,"pp. Paper R IX 04",2006,May
"Eisuke Tokumitsu,Takaaki Miyasako,Masaru Senoo","Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures",,"2005 Mater. Res. Soc. Symp. Proc.",,"Vol. 830",,"pp. 107-112",2005,July
"Eisuke Tokumitsu,Masaru Senoo,Takaaki Miyasako","Use of ferroelectric gate insulator for thin film transistors with ITO channel",,"Journal of Microelectronic Engineering",,"vol. 80",,"pp. 305-308",2005,June
"E.Tokumitsu,M. Senoo,T. Miyasako","Use of ferroelectric gate insulator for thin film transistors with ITO channel",,"Journal of Microelectronic Engineering",,"vol. 80",,"pp. 305-308",2005,June
"Takaaki Miyasako,Masaru Senoo,Eisuke Tokumitsu","Ferroelectric-gate thin?film transistors using indium-tin-oxide channel with large charge controllability",,"Applied Physics Letters",,"vol. 86","No. 16","pp. 162902-1?3",2005,Apr.
"Takaaki Miyasako,Masaru Senoo,Eisuke Tokumitsu","Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with oarge charge controllability",,"Applied Physics Letters",,"vol. 86","No. 16","pp. 162902/1-3",2005,Apr.
"Eisuke Tokumitsu,Takaaki Miyasako,Masaru Senoo","Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O3 films",,"Journal of the European Ceramic Society",,"Vol. 25",,"pp. 2277-2280",2005,Jan.
"Takaaki Miyasako,Masaru Senoo,Eisuke Tokumitsu","Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process",,"IEICE Transactions on Electronics",,"Vol. E87-C","No. 10","pp. 1694-1699",2004,Oct.